Results 61 to 70 of about 10,782 (198)

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

Smart Electrical Screening Methodology for Channel Hole Defects of 3D Vertical NAND (VNAND) Flash Memory

Eng
In order to successfully achieve mass production in NAND flash memory, a novel test procedure has been proposed to electrically detect and screen the channel hole defects, such as Not-Open, Bowing, and Bending, which are unique in high-density 3D NAND ...
Beomjun Kim, Gyeongseob Seo, Myungsuk Kim   +2 more
doaj   +1 more source

Impact of Stacking-Up and Scaling-Down Bit Cells in 3D NAND on Their Threshold Voltages

Micromachines, 2022
Over the past few decades, NAND flash memory has advanced with exponentially-increasing bit growth. As bit cells in 3D NAND flash memory are stacked up and scaled down together, some potential challenges should be investigated.
Dongwoo Lee, Changhwan Shin
doaj   +1 more source

A Case for Redundant Arrays of Hybrid Disks (RAHD) [PDF]

, 2008
Hybrid Hard Disk Drive was originally concepted by Samsung, which incorporates a Flash memory in a magnetic disk. The combined ultra-high-density benefits of magnetic storage and the low-power and fast read access of NAND technology inspires us to ...
Deng, D., Guo, Y.K., Helian, N., Khare, V., Liao, C., Parker, A., Rashidi, M., Wang, F., Wu, S.   +8 more
core   +1 more source

Flexible Memory: Progress, Challenges, and Opportunities

Advanced Intelligent Discovery, EarlyView.
Flexible memory technology is crucial for flexible electronics integration. This review covers its historical evolution, evaluates rigid systems, proposes a flexible memory framework based on multiple mechanisms, stresses material design's role, presents a coupling model for performance optimization, and points out future directions.
Ruizhi Yuan, Sen Chen, Minghui Guo, Ziliang Cui, Yujie Du, Jing Liu   +5 more
wiley   +1 more source

Systematic Analysis of Spacer and Gate Length Scaling on Memory Characteristics in 3D NAND Flash Memory

Applied Sciences
This study investigates the impact of oxide/nitride (ON) pitch scaling on the memory performance of 3D NAND flash memory. We aim to enhance 3D NAND flash memory by systematically reducing the spacer length (Ls) and gate length (Lg) to achieve improved ...
Hee Young Bae, Seul Ki Hong, Jong Kyung Park   +2 more
doaj   +1 more source

Review of ferroelectric field‐effect transistors for three‐dimensional storage applications

Nano Select, 2021
The ferroelectric field‐effect transistor (FeFET) is one of the leading contenders to succeed charge‐trap‐based flash memory (CTF) devices in the current vertically‐integrated NAND flash storage market.
Hyeon Woo Park, Jae‐Gil Lee, Cheol Seong Hwang   +2 more
doaj   +1 more source

Cryogenic Neuromorphic Synaptic Behavior in 180 nm Silicon Transistors for Emerging Computing Systems

Advanced Intelligent Systems, EarlyView.
This study investigates the neuromorphic plasticity behavior of 180 nm bulk complementary metal oxide semiconductor (CMOS) transistors at cryogenic temperatures. The observed hysteresis data reveal a signature of synaptic behavior in CMOS transistors at 4 K.
Fiheon Imroze, Bhavani Yalagala, Naveen Kumar, Mostafa Elsayed, Meraj Ahmad, Robert Graham, Vihar Georgiev, Hadi Heidari, Martin Weides   +8 more
wiley   +1 more source

Fully CMOS‐Compatible 3‐T Embedded NOR Flash Memory Achieving 28 ns Long‐Term Potentiation/Long‐Term Depression for High‐Speed Online Training Accelerators

Advanced Intelligent Systems, EarlyView.
A fully complementary metal–oxide–semiconductor process‐compatible novel 3‐T embedded NOR flash is demonstrated on a 28 nm fully depleted silicon‐on‐insulator platform. The proposed memory achieves record‐fast 28‐long‐term potentiation and depression , offering high‐speed and highly reliable synaptic behavior for online training in neuromorphic ...
Jae Seung Woo, Kyoung Min Choi, Geun Tae Park, Jin Ho Chang, Woo Young Choi   +4 more
wiley   +1 more source

Experimental Investigation of Threshold Voltage Temperature Effect During Cross-Temperature Write–Read Operations in 3-D NAND Flash

IEEE Journal of the Electron Devices Society, 2021
Reading data at a temperature which different from writing can cause a large number of failed bits in 3D NAND Flash memory. In this work, the threshold voltage (Vth) temperature effect of 3D NAND flash memory cell was investigated and a method was ...
Dan Wu, Hailong You, Xiaoguang Wang, Shujing Zhong, Qi Sun   +4 more
doaj   +1 more source