Results 71 to 80 of about 10,782 (198)

Large‐Scale and Highly Reliable Hopfield Neural Networks Using Vertical NAND Flash Memory for the In‐Memory Associative Computing

open access: yesAdvanced Intelligent Systems, EarlyView.
Large‐scale Hopfield neural networks (HNNs) for associative computing are implemented using vertical NAND (VNAND) flash memory. The proposed VNAND HNN with the asynchronous update scenario achieve robust image restoration performance despite fabrication variations, while significantly reducing chip area (≈117× smaller than resistive random‐access ...
Jin Ho Chang   +4 more
wiley   +1 more source

Review of Memristors for In‐Memory Computing and Spiking Neural Networks

open access: yesAdvanced Intelligent Systems, EarlyView.
Memristors uniquely enable energy‐efficient, brain‐inspired computing by acting as both memory and synaptic elements. This review highlights their physical mechanisms, integration in crossbar arrays, and role in spiking neural networks. Key challenges, including variability, relaxation, and stochastic switching, are discussed, alongside emerging ...
Mostafa Shooshtari   +2 more
wiley   +1 more source

A Fully Integrated Analog Processing‐in‐Memory System Based on Charge‐Trap Flash Synapse Arrays and Successive Integration‐and‐Rescaling Neurons

open access: yesAdvanced Intelligent Systems, EarlyView.
A fully integrated analog processing‐in‐memory system is demonstrated, combining charge‐trap flash synapse arrays with a successive integration‐and‐rescaling neuron circuit. The architecture performs bit‐sliced analog accumulation with high linearity and low power, achieving efficient and scalable analog in‐memory computing and bridging device‐level ...
Sojoong Kim   +4 more
wiley   +1 more source

Media Storage Technology Usb Flash Drive [PDF]

open access: yes, 2003
USB Flash Drive is a type of NAND-type flash memory combined with a 1.1 or USB 2.0 andused as data storage devices smaller and lighter. Because of the sophistication that has madeUSB Flash Drive becoming increasingly popular as an alternative replacement
Irawati, D. R. (Diyah)
core  

Keggin‐Type Aluminum Polyoxometalate‐Mediated Oxidation of Amorphous Carbon for Engineered Electrochemical Interfaces

open access: yesCarbon Energy, EarlyView.
Keggin‐type Al‐POM‐coated silica achieves selective surface oxidation of amorphous carbon through electrostatic attraction and proton‐coupled oxidation, tailoring interfacial properties for lithium‐ion batteries and semiconductor processes. ABSTRACT Amorphous carbon is widely used in energy storage and semiconductor technologies, where surface ...
Ganggyu Lee   +13 more
wiley   +1 more source

Vertical Self‐Rectifying Memristive Arrays for Page‐Wise Parallel Logic and Arithmetic Processing

open access: yesAdvanced Materials, Volume 38, Issue 8, 6 February 2026.
This study proposes a page‐wise logic‐in‐memory architecture realized in a 3D vertical resistvie random‐access memory array of self‐rectifying memristors. By introducing intra‐ and inter‐page logic primitives, the system enables Boolean and arithmetic operations to be executed directly within the memory.
Kunhee Son   +12 more
wiley   +1 more source

A Comparative Study of Digital Memristor‐Based Processing‐In‐Memory from a Device and Reliability Perspective

open access: yesAdvanced Electronic Materials, Volume 12, Issue 1, 7 January 2026.
Processing‐in‐memory (PIM) architectures based on memristors offer significant potential for low‐power computation and the realization of novel computing paradigms by performing logic operations directly within memory. This review summarizes recent advances in memristor‐based logic techniques, with particular emphasis on reliability considerations and ...
Thomas Neuner   +5 more
wiley   +1 more source

Flash-memories in Space Applications: Trends and Challenges [PDF]

open access: yes, 2009
Nowadays space applications are provided with a processing power absolutely overcoming the one available just a few years ago. Typical mission-critical space system applications include also the issue of solid-state recorder(s).
Caramia, M.   +3 more
core  

Ferroelectric HZO Thin Films for FEFETs: Crystal Structure‐Device Performance Relationship

open access: yesAdvanced Electronic Materials, Volume 12, Issue 1, 7 January 2026.
Crystal Structure of HZO Thin Films Methods of Thin Film Deposition 1T‐FeFET Design Influence on Ferroelectric Properties FeFET Applications Recent Advances and Challenges ORTHORHOMBIC HEARTBEAT. Abstract The rapid development of hafnium zirconium oxide (HZO) thin films has established ferroelectric field‐effect transistors (FeFETs) as strong ...
Harsha Ragini Aturi   +2 more
wiley   +1 more source

Exploring Design Dimensions in Flash-based Mass-memory Devices [PDF]

open access: yes, 2009
Mission-critical space system applications present several issues: a typical one is the design of a mass-memory device (i.e., a solid- state recorder).
Caramia, M.   +3 more
core  

Home - About - Disclaimer - Privacy