Results 31 to 40 of about 368,571 (256)

High-Temperature Bipolar-Mode Operation of Normally-Off Diamond JFET

IEEE Journal of the Electron Devices Society, 2017
High temperature characteristics of bipolar-mode operation of normally-off diamond junction field-effect transistors were investigated up to 573 K. As an important factor, the current gain depending on the gate current was analyzed with a theoretical ...
Takayuki Iwasaki, Hiromitsu Kato, Toshiharu Makino, Masahiko Ogura, Daisuke Takeuchi, Satoshi Yamasaki, Mutsuko Hatano   +6 more
doaj   +1 more source

Low Gate Lag Normally-Off p-GaN/AlGaN/GaN High Electron Mobility Transistor with Zirconium Gate Metal

Crystals, 2020
The impact of gate metal on the leakage current and breakdown voltage of normally-off p-GaN gate high-electron-mobility-transistor (HEMT) with nickel (Ni) and zirconium (Zr) metals were studied and investigated.
Chia-Hao Liu, Hsien-Chin Chiu, Chong-Rong Huang, Kuo-Jen Chang, Chih-Tien Chen, Kuang-Po Hsueh   +5 more
doaj   +1 more source

Reliability, Applications and Challenges of GaN HEMT Technology for Modern Power Devices: A Review

Crystals, 2022
A new generation of high-efficiency power devices is being developed using wide bandgap (WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to silicon. The recent interest in GaN has been piqued by its excellent material
Naeemul Islam, Mohamed Fauzi Packeer Mohamed, Muhammad Firdaus Akbar Jalaludin Khan, Shaili Falina, Hiroshi Kawarada, Mohd Syamsul   +5 more
doaj   +1 more source

Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate

Energies, 2017
GaN-based transistors with p-GaN gate are commonly accepted as promising devices for application in power converters, thanks to the positive and stable threshold voltage, the low on-resistance and the high breakdown field.
Matteo Meneghini, Oliver Hilt, Joachim Wuerfl, Gaudenzio Meneghesso   +3 more
doaj   +1 more source

Normally-off GaN Transistors for Power Applications

Journal of Physics: Conference Series, 2014
Normally-off high voltage GaN-HFETs for switching applications are presented. Normally-off operation with threshold voltages of 1 V and more and with 5 V gate swing has been obtained by using p-type GaN as gate. Different GaN-based buffer types using doping and backside potential barriers have been used to obtain blocking strengths up to 1000 V.
O Hilt, E Bahat-Treidel, F Brunner, A Knauer, R Zhytnytska, P Kotara, J Wuerfl   +6 more
openaire   +2 more sources

Normally-Off AlGaN/GaN HEMTs With a Low Reverse Conduction Turn-On Voltage

IEEE Access, 2023
Third quadrant operation is vital for power applications such as synchronous DC-DC converters and inverters, which require a low drain-source voltage drop to reduce conduction losses.
Dai-Jie Lin, Chih-Kang Chang, Kuntal Barman, Yu-Chuan Chu, William Shih, Jian-Jang Huang   +5 more
doaj   +1 more source

Design and Simulation of High Performance Lattice Matched Double Barrier Normally Off AlInGaN/GaN HEMTs

IEEE Journal of the Electron Devices Society, 2020
A novel lattice matched double barrier Al0.72In0.16Ga0.12N/Al0.18In0.04Ga0.78N/GaN normally-off high electron mobility transistor (HEMT) is designed and simulated by solving a set of thermodynamic transport equations.
Niraj Man Shrestha, Yiming Li, Chao-Hsuan Chen, Indraneel Sanyal, Jenn-Hawn Tarng, Jen-Inn Chyi, Seiji Samukawa   +6 more
doaj   +1 more source

Investigation of 1/f and Lorentzian Noise in TMAH-treated Normally-Off GaN MISFETs

Crystals, 2020
A tetramethyl ammonium hydroxide (TMAH)-treated normally-off Gallum nitride (GaN) metal-insulator-semiconductor field-effect transistor (MISFET) was fabricated and characterized using low-frequency noise (LFN) measurements in order to find the conduction
Ki-Sik Im, Mallem Siva Pratap Reddy, Yeo Jin Choi, Youngmin Hwang, Sung Jin An, Jea-Seung Roh   +5 more
doaj   +1 more source

Recent advances in diamond MOSFETs with normally off characteristics

Functional Diamond
Diamond has superior physical and electronic properties and it is regarded as an ultimate material of power-electronics applications. Numerous studies have been focusing on the diamond-based power devices, especially on diamond metal-oxide-semiconductor ...
Mingkun Li, Xueqia Zhang, Shuopei Jiao, Yanrong Wang, Shuhua Wei, Jiang Yan, Jing Zhang, Xufang Zhang   +7 more
doaj   +1 more source

The HIT Network for Children and Adolescents With CNS Tumors Facilitates Improvements of Diagnostic Assessments, Multimodal Treatments, Individual Counseling, and Research in Germany, Austria, and Switzerland

Pediatric Blood &Cancer, EarlyView.
ABSTRACT Background The HIT network was established in 2000 to create a population‐based structure aiming to improve survival rates and reduce late effects for children with central nervous system (CNS) tumors by conducting comprehensive clinical trials.
Stefan Rutkowski, Michael C. Frühwald, Gudrun Fleischhack, Stephan Tippelt, Pablo Hernáiz‐Driever, Olaf Witt, Astrid Gnekow, Christof Kramm, Matthias Eyrich, Johannes E. A. Wolf, Hermann Müller, Carsten Friedrich, Uwe R. Kordes, Denise Obrecht‐Sturm, Petra Ketteler, Barbara von Zezschwitz, Pascal Johann, Dominik Sturm, Karoline Nemes, Stefan Schönberger, Till Milde, Brigitte Bison, Monika Warmuth‐Metz, Torsten Pietsch, Ulrich Schüller, Arend Koch, David Capper, Martin Hasselblatt, Christian Thomas, Christian Hagel, Stefan M. Pfister, Felix Sahm, David T. W. Jones, Martin U. Schuhmann, Jürgen Krauss, Pedram Emami, Ahmed El Damaty, Rolf D. Kortmann, Rudolf Schwarz, Jürgen Debus, Mechthild Krause, Fabian Pohl, Holger Ottensmeier, Lisa Bußenius, Katja Baust, Andreas Faldum, Cecile Ronckers, Desiree Grabow, Martin Benesch, Thomas Perwein, Karin Dieckmann, Irene Slavc, Johannes Gojo, Nicolas U. Gerber, André O. von Bueren, Katrin Scheinemann, Gabriele Calaminus, Beate Timmermann, Ulrich‐Wilhelm Thomale, Martin Mynarek   +59 more
wiley   +1 more source