Results 41 to 50 of about 368,571 (256)
Normally off GaAs DC-8 GHz amplifier
Electronics Letters, 1988 A DC-8 GHz, 8.5 dB-gain normally off GaAs monolithic amplifier with resistor load and shunt negative feedback has been developed. The fabricated amplifier has input and output VSWRs less than 1.8 over the whole frequency range.
O. Arnaud +3 more
openaire +1 more source
Pediatric Blood &Cancer, EarlyView.ABSTRACT Introduction Characterizing stressful events reported by childhood cancer survivors experienced throughout the lifespan may help improve trauma‐informed care relevant to the survivor experience. Methods Participants included 2552 survivors (54% female; 34 years of age) and 469 community controls (62% female; 33 years of age) from the St.
Megan E. Ware +13 more
wiley +1 more source
Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET With Reduced Self Heating
IEEE Journal of the Electron Devices Society, 2017 A method to improve thermal management of β-Ga2O3 FETs is demonstrated here via simulation of epitaxial growth on a 4H-SiC substrate. Using a recently published device as a model, the reduction achieved in self-heating allows the device to be ...
Stephen A. O. Russell +6 more
doaj +1 more source
Pediatric Blood &Cancer, EarlyView.ABSTRACT Asymptomatic infection poses a significant risk for children undergoing hematopoietic stem cell transplantation (HSCT). Pre‐transplant surveillance computed tomography (CT) is commonly used to identify occult infection, though its diagnostic yield remains uncertain.
Tyler Obermark +9 more
wiley +1 more source
Pediatric Blood &Cancer, EarlyView.Abstract Background Sickle cell disease (SCD) is an autosomal recessive hemoglobinopathy affecting millions of individuals worldwide. The clinical expression and psychosocial burden of SCD vary widely across geographical, cultural, and healthcare system contexts, underscoring the need for setting‐specific approaches to assessment.
Desiré Fantasia +7 more
wiley +1 more source
Electronics Letters, 2021 Here, a gated‐anode diode (GAD) is proposed where an anode electrode is formed by connecting a gate electrode and an ohmic electrode of a normally‐off GaN HEMT for a 5.8 GHz rectenna.
Hidemasa Takahashi +9 more
doaj +1 more source
IEEE Access, 2023 A new vertical transistor structure based on GaN nanowire is designed and optimized using the TCAD-Santaurus tool with an electrothermal model. The studied structure with quasi-1D drift region is adapted to GaN nanowires synthesized with the bottom-up ...
Mohammed Benjelloun +6 more
doaj +1 more source
Pediatric Blood &Cancer, EarlyView.ABSTRACT Neuroblastoma is the most common extracranial solid tumor in early childhood. Its clinical behavior is highly variable, ranging from spontaneous regression to fatal outcome despite intensive treatment. The International Society of Pediatric Oncology Europe Neuroblastoma Group (SIOPEN) Radiology and Nuclear Medicine Specialty Committees ...
Annemieke Littooij +11 more
wiley +1 more source
Pediatric Blood &Cancer, EarlyView.ABSTRACT Chemotherapy‐induced peripheral neuropathy remains a major complication in pediatric cancer, with disrupted somatosensory and nociceptive processing being a key aspect. This review synthesizes empirical studies on alterations in somatosensory and nociceptive processing in children and adolescents with cancer.
Julia Schweiger +4 more
wiley +1 more source
Applying normally-off GaN HEMTs for coreless high-frequency wireless chargers
CES Transactions on Electrical Machines and Systems, 2017 Wide-bandgap (WBG) devices such as Gallium-Nitride (GaN) High Electron Mobility Transistors (HEMTs) have become popular in the power electronics industry as they offer a lower switching loss, higher thermal capability and higher power density than ...
Wei Qian +4 more
doaj +1 more source