Results 81 to 90 of about 368,571 (256)

Biallelic Inactivation of NSD1 Associated With Carcinogenesis in Sotos Syndrome

open access: yes
Pediatric Blood &Cancer, EarlyView.
Nicholas A. Borja   +8 more
wiley   +1 more source

The newfound relationship between extrachromosomal DNAs and excised signal circles

open access: yesFEBS Letters, EarlyView.
Extrachromosomal DNAs (ecDNAs) contribute to the progression of many human cancers. In addition, circular DNA by‐products of V(D)J recombination, excised signal circles (ESCs), have roles in cancer progression but have largely been overlooked. In this Review, we explore the roles of ecDNAs and ESCs in cancer development, and highlight why these ...
Dylan Casey, Zeqian Gao, Joan Boyes
wiley   +1 more source

Development and technological realization of components Gallium Nitride (GaN) HEMTs with "Normally-Off" functionality "Normally-Off" functionality

open access: yes, 2021
Thanks to their high breakdown voltage and ultrahigh power density operation, AlGaN/GaN HEMTs stand out as promising candidates for next-generation of high-speed switching devices. While most of the demonstrated AlGaN/GaN HEMTs are inherently normally-on with a negative gate threshold voltage, normally-off mode is strongly demanded to fulfill the ...
openaire   +1 more source

An upstream open reading frame regulates expression of the mitochondrial protein Slm35 and mitophagy flux

open access: yesFEBS Letters, EarlyView.
This study reveals how the mitochondrial protein Slm35 is regulated in Saccharomyces cerevisiae. The authors identify stress‐responsive DNA elements and two upstream open reading frames (uORFs) in the 5′ untranslated region of SLM35. One uORF restricts translation, and its mutation increases Slm35 protein levels and mitophagy.
Hernán Romo‐Casanueva   +5 more
wiley   +1 more source

Dynamic characteristics of neutral beam etching enabled normally-off recessed-gate GaN MOSHEMT

open access: yesPower Electronic Devices and Components
Dynamic performances of recessed-gate GaN metal oxide semiconductor high electron mobility transistors (MOSHEMTs) enabled by argon-based neutral beam etching (Ar-NBE) are comprehensively investigated.
Yitai Zhu   +8 more
doaj   +1 more source

Activity-dependent disruption of intersublaminar spaces and ABAKAN expression does not impact functional on and off organization in the ferret retinogeniculate system

open access: yesNeural Development, 2011
In the adult visual system, functionally distinct retinal ganglion cells (RGCs) within each eye project to discrete targets in the brain. In the ferret, RGCs encoding light increments or decrements project to independent On and Off sublaminae within each
Sun Chao   +2 more
doaj   +1 more source

Normally-off Hydrogen-Terminated Diamond Field-Effect Transistor with SnOx Dielectric Layer Formed by Thermal Oxidation of Sn. [PDF]

open access: yesMaterials (Basel), 2022
He S   +9 more
europepmc   +1 more source

Developing of normally-off p-GaN gate HEMT

open access: yesJournal of Physics: Conference Series, 2019
Abstract In this paper, the high electron mobility transistor (HEMT) with p-GaN gate is developed. The article demonstrates development of normally-off p-GaN gate HEMT on heterostructure with AlN stop layer for p-GaN selective etching and formation of normally-on GaN HEMT on the same wafer.
O B Kukhtyaeva   +7 more
openaire   +1 more source

Sequence determinants of RNA G‐quadruplex unfolding by Arg‐rich regions

open access: yesFEBS Letters, EarlyView.
We show that Arg‐rich peptides selectively unfold RNA G‐quadruplexes, but not RNA stem‐loops or DNA/RNA duplexes. This length‐dependent activity is inhibited by acidic residues and is conserved among SR and SR‐related proteins (SRSF1, SRSF3, SRSF9, U1‐70K, and U2AF1).
Naiduwadura Ivon Upekala De Silva   +10 more
wiley   +1 more source

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