Results 191 to 200 of about 19,199 (250)

Performance-Based Optical Proximity Correction Methodology

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2010
The rapid reduction in critical dimension of integrated circuits has lead to substantial mask data expansion for mask design based on traditional model-based full-chip optical proximity correction (OPC). Conventional EPE-OPC is mainly based on edge placement error (EPE) without consideration of its effect on circuit performance; often resulting in an ...
Siew-Hong Teh, Chun-Huat Heng, Arthur Tay   +2 more
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Wafer Topography-Aware Optical Proximity Correction

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2006
Depth of focus is the major contributor to lithographic process margin. One of the major causes of focus variation is imperfect planarization of fabrication layers. Presently, optical proximity correction (OPC) methods are oblivious to the predictable nature of focus variation arising from wafer topography.
Puneet Gupta 0001, Andrew B. Kahng, Chul-Hong Park, Kambiz Samadi, Xu Xu 0001   +4 more
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Transferring Optical Proximity Correction (OPC) Effect into Optical Mode

8th International Symposium on Quality Electronic Design (ISQED'07), 2007
Because of the ever-decreasing feature size in modern photolithography, the complexity of pattern increases dramatically and tape-out time becomes prolonged. It is desirable to transfer OPC process into optical model for the sake of time. In this report, we introduce a novel method of calculating the OPC effect by modifying the optical model, which is ...
Jianliang Li, Qiliang Yan, Lawrence S. Melvin III   +2 more
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Electrically driven optical proximity correction

SPIE Proceedings, 2008
An approach that provides electrically driven optical proximity correction is described. In one embodiment, there is a method for performing an electrically driven optical proximity correction. In this embodiment, an integrated circuit mask layout representative of a plurality of layered shapes each defined by features and edges is received.
Shayak Banerjee, Praveen Elakkumanan, Lars W. Liebmann, James A. Culp, Michael Orshansky   +4 more
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Contour-based optical proximity correction

SPIE Proceedings, 2009
Due to the corner rounding effect in litho process, it is hard to make the wafer image as sharp as the drawn layout near two-dimensional pattern in IC design 1, 2 . The inevitable gap between the design and the wafer image make the two-dimensional pattern correction complex and sensitive to the OPC correction recipe.
Brian Zhou, Liang Zhu, Yingchun Zhang, Yili Gu, Xiaohui Kang   +4 more
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New approach to optical proximity correction

SPIE Proceedings, 1998
A hierarchical rule based optical proximity effect correction approach is presented. The approach has been driven by maskmaking and production requirements to make OPC a practical problem solution. The model based rule generation is presented, as well as benchmark tests on different state-of- the-art test chips.
Anja Rosenbusch, Andrew C. Hourd, Casper A. H. Juffermans, Hartmut Kirsch, Frederic P. Lalanne, Wilhelm Maurer, Carmelo Romeo, Kurt G. Ronse, Patrick Schiavone, Michal Simecek, Olivier Toublan, John G. Watson, Wolfram Ziegler, Rainer Zimmermann   +13 more
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Characterization of optical proximity correction features

SPIE Proceedings, 2001
One-dimensional linewidth alone is an inadequate metric for low-k1 lithography. Critical Dimension metrology and analysis have historically focused on 1-dimensional effects but with low-k1 lithography is has increasingly been found that the process window for acceptable imaging of the full 2D structure is more limited than the process window for CDs ...
John A. Allgair, Michelle Ivy, Kevin Lucas, John L. Sturtevant, Richard C. Elliott, Chris A. Mack, Craig W. MacNaughton, John D. Miller, Mike Pochkowski, Moshe E. Preil, John C. Robinson, Frank Santos   +11 more
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Optical Proximity Correction

2009
In low k 1 imaging, high-spatial-frequency components of the mask spectrum carry a sizable fraction of the transmitted light energy. These components are not captured by the low-pass pupil. For example, only the first orders are used in the imaging of dense patterns with periods p I‚ ≤1 under off-axis illumination.
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Fracture friendly optical proximity correction

SPIE Proceedings, 2005
Optical Proximity Correction (OPC) improves image fidelity by adding and subtracting small enhancement shapes from the original pattern data. Although the presence of these small shapes improves the final wafer image quality, it causes an increase in total figure count, longer fracture processing time, and the introduction of sliver figures.
Frank Amoroso, Michel Cote, Tanya Do, Robert Lugg, John Nogatch   +4 more
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Verifying the "correctness" of your optical proximity correction designs

SPIE Proceedings, 1999
The emerging demand for smaller and smaller IC features, undiminished by the delay of next generation stepper technologies, has increased the need for OPC and PSM designs that are becoming critical for leading-edge IC manufacturing. However, modifications made to the original layout by OPC or PSM deign tools in general, exclude the use of conventional ...
Vinod K. Malhotra, Fang C. Chang
openaire   +1 more source