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New approach to optical proximity correction
SPIE Proceedings, 1998A hierarchical rule based optical proximity effect correction approach is presented. The approach has been driven by maskmaking and production requirements to make OPC a practical problem solution. The model based rule generation is presented, as well as benchmark tests on different state-of- the-art test chips.
Patrick Schiavone +2 more
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Application of optical proximity correction technology
Science in China Series F: Information Sciences, 2008zbMATH Open Web Interface contents unavailable due to conflicting licenses.
Yici Cai +4 more
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Optical proximity correction (OPC)
Proceedings of the 41st annual Design Automation Conference, 2004As the technology migrates into the deep submicron manufacturing(DSM) era, the critical dimension of the circuits is getting smaller than the lithographic wavelength. The unavoidable light diffraction phenomena in the sub-wavelength technologies have become one of the major factors in the yield rate.
Li-Da Huang, Martin D. F. Wong
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Optical Proximity Correction, Methodology and Limitations
2021 China Semiconductor Technology International Conference (CSTIC), 2021Since the early 2000's, model based Optical Proximity Correction (MB-OPC) has been used by the semiconductor industry to improve the linewidth uniformity and pattern fidelity in photolithography. Designed to be improved from its predecessor, the rule based OPC (RB-OPC), which relies on a table of biases to correct linewidth variation due to Optical ...
Yongqiang Hou, Qiang Wu
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Wafer Topography-Aware Optical Proximity Correction
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2006Depth of focus is the major contributor to lithographic process margin. One of the major causes of focus variation is imperfect planarization of fabrication layers. Presently, optical proximity correction (OPC) methods are oblivious to the predictable nature of focus variation arising from wafer topography.
Puneet Gupta 0001 +4 more
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Performance-Based Optical Proximity Correction Methodology
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2010The rapid reduction in critical dimension of integrated circuits has lead to substantial mask data expansion for mask design based on traditional model-based full-chip optical proximity correction (OPC). Conventional EPE-OPC is mainly based on edge placement error (EPE) without consideration of its effect on circuit performance; often resulting in an ...
Siew-Hong Teh +2 more
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Transferring Optical Proximity Correction (OPC) Effect into Optical Mode
8th International Symposium on Quality Electronic Design (ISQED'07), 2007Because of the ever-decreasing feature size in modern photolithography, the complexity of pattern increases dramatically and tape-out time becomes prolonged. It is desirable to transfer OPC process into optical model for the sake of time. In this report, we introduce a novel method of calculating the OPC effect by modifying the optical model, which is ...
Jianliang Li +2 more
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Electrically driven optical proximity correction
SPIE Proceedings, 2008An approach that provides electrically driven optical proximity correction is described. In one embodiment, there is a method for performing an electrically driven optical proximity correction. In this embodiment, an integrated circuit mask layout representative of a plurality of layered shapes each defined by features and edges is received.
Shayak Banerjee +4 more
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