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Contour-based optical proximity correction
SPIE Proceedings, 2009Due to the corner rounding effect in litho process, it is hard to make the wafer image as sharp as the drawn layout near two-dimensional pattern in IC design 1, 2 . The inevitable gap between the design and the wafer image make the two-dimensional pattern correction complex and sensitive to the OPC correction recipe.
Brian Zhou +4 more
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Multiple-stage optical proximity correction
SPIE Proceedings, 2003Standard industry practice in model-based optical proximity correction is to use a single-stage model in which mask, optical projection, resist, and etch effects are lumped together [J.P. Stirniman, M.L. Rieger, SPIE Proc. Optical/Laser Microlithography X, Vol.
Daniel F. Beale +2 more
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Fracture friendly optical proximity correction
SPIE Proceedings, 2005Optical Proximity Correction (OPC) improves image fidelity by adding and subtracting small enhancement shapes from the original pattern data. Although the presence of these small shapes improves the final wafer image quality, it causes an increase in total figure count, longer fracture processing time, and the introduction of sliver figures.
Frank Amoroso +4 more
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2009
In low k 1 imaging, high-spatial-frequency components of the mask spectrum carry a sizable fraction of the transmitted light energy. These components are not captured by the low-pass pupil. For example, only the first orders are used in the imaging of dense patterns with periods p I â¤1 under off-axis illumination.
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In low k 1 imaging, high-spatial-frequency components of the mask spectrum carry a sizable fraction of the transmitted light energy. These components are not captured by the low-pass pupil. For example, only the first orders are used in the imaging of dense patterns with periods p I â¤1 under off-axis illumination.
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Process dependencies of optical proximity corrections
SPIE Proceedings, 2001Optical Proximity Correction has emerged as an industry standard technique to reproduce the desired shapes on wafers as pattern dimensions are approaching the optical resolution limits. However secondary effects, if not properly controlled, may impede successful application of this technique.
Franz X. Zach +3 more
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Characterization of optical proximity correction features
SPIE Proceedings, 2001One-dimensional linewidth alone is an inadequate metric for low-k1 lithography. Critical Dimension metrology and analysis have historically focused on 1-dimensional effects but with low-k1 lithography is has increasingly been found that the process window for acceptable imaging of the full 2D structure is more limited than the process window for CDs ...
John A. Allgair +11 more
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Verifying the "correctness" of your optical proximity correction designs
SPIE Proceedings, 1999The emerging demand for smaller and smaller IC features, undiminished by the delay of next generation stepper technologies, has increased the need for OPC and PSM designs that are becoming critical for leading-edge IC manufacturing. However, modifications made to the original layout by OPC or PSM deign tools in general, exclude the use of conventional ...
Vinod K. Malhotra, Fang C. Chang
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Optical proximity correction by e-beam over-correction
Microelectronic Engineering, 1999Proximity correction mechanism in e-beam systems can be explored to correct optical proximity effect in resist. Using a Hitachi HL-800 e-beam mask writer, we demonstrate optical proximity correction (OPC) for [email protected] attenuated phase-shifting contact holes with duty ratios from 1:1 to 1:5, for various optical settings and resist systems. This
C.H. Lin, S.D. Tzu, Anthony Yen
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Adaptive Optical Proximity Correction Using an Optimization Method
7th IEEE International Conference on Computer and Information Technology (CIT 2007), 2007This paper proposes a new approach to the optical proximity correction (OPC) method which reduces OPC calculation loads by employing an optimization method. OPC is a method of correcting for a mask pattern to improve the fidelity of an image pattern on a silicon wafer.
Tetsuaki Matsunawa +8 more
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Thermal treatment for optical proximity correction
Microelectronic Engineering, 2007For 32-nm technology node, thermal treatment is one of the process extension techniques with 193-nm ArF lithography equipment and chemically-amplified resist (CAR). However, it is difficult to use these techniques in the manufacture process because the optical proximity effect of thermal effects is quite severe.
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