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Optical Proximity Correction, Methodology and Limitations
2021 China Semiconductor Technology International Conference (CSTIC), 2021 Since the early 2000's, model based Optical Proximity Correction (MB-OPC) has been used by the semiconductor industry to improve the linewidth uniformity and pattern fidelity in photolithography. Designed to be improved from its predecessor, the rule based OPC (RB-OPC), which relies on a table of biases to correct linewidth variation due to Optical ...
Yongqiang Hou, Qiang Wu
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New approach to optical proximity correction
SPIE Proceedings, 1998A hierarchical rule based optical proximity effect correction approach is presented. The approach has been driven by maskmaking and production requirements to make OPC a practical problem solution. The model based rule generation is presented, as well as benchmark tests on different state-of- the-art test chips.
Andrew C Hourd +2 more
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Electrically driven optical proximity correction
SPIE Proceedings, 2008 An approach that provides electrically driven optical proximity correction is described. In one embodiment, there is a method for performing an electrically driven optical proximity correction. In this embodiment, an integrated circuit mask layout representative of a plurality of layered shapes each defined by features and edges is received.
Shayak Banerjee +4 more
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Multiple-stage optical proximity correction
SPIE Proceedings, 2003 Standard industry practice in model-based optical proximity correction is to use a single-stage model in which mask, optical projection, resist, and etch effects are lumped together [J.P. Stirniman, M.L. Rieger, SPIE Proc. Optical/Laser Microlithography X, Vol.
Daniel F. Beale +2 more
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Contour-based optical proximity correction
SPIE Proceedings, 2009 Due to the corner rounding effect in litho process, it is hard to make the wafer image as sharp as the drawn layout near two-dimensional pattern in IC design 1, 2 . The inevitable gap between the design and the wafer image make the two-dimensional pattern correction complex and sensitive to the OPC correction recipe.
Brian Zhou +4 more
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Fracture friendly optical proximity correction
SPIE Proceedings, 2005 Optical Proximity Correction (OPC) improves image fidelity by adding and subtracting small enhancement shapes from the original pattern data. Although the presence of these small shapes improves the final wafer image quality, it causes an increase in total figure count, longer fracture processing time, and the introduction of sliver figures.
Frank Amoroso +4 more
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Source imperfection impacts on optical proximity correction
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, 2016This study explores the impact of illumination source defects on photolithography image fidelity when optical proximity correction (OPC) is used on the pattern. The objective is to gain understanding of how the nonlinearities produced in OPC impact the final pattern fidelity when source defects are introduced.
Lawrence S Melvin, Artak Isoyan
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, 2009 In low k 1 imaging, high-spatial-frequency components of the mask spectrum carry a sizable fraction of the transmitted light energy. These components are not captured by the low-pass pupil. For example, only the first orders are used in the imaging of dense patterns with periods p I â¤1 under off-axis illumination.
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Application of a new approach to optical proximity correction
SPIE Proceedings, 1999Optical proximity correction is one of the major hurdles chip manufacturing has to overcome. The paper presents evaluation results of CAPROX OPC, a rule based OPC software. Mask making influences as well as production requirements are discussed. Rule generation, one of the most critical parts in a rule based correction scheme is discussed.
Wilhelm Maurer +2 more
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