Results 241 to 250 of about 19,664 (279)

Optical proximity correction by e-beam over-correction

Microelectronic Engineering, 1999
Proximity correction mechanism in e-beam systems can be explored to correct optical proximity effect in resist. Using a Hitachi HL-800 e-beam mask writer, we demonstrate optical proximity correction (OPC) for [email protected] attenuated phase-shifting contact holes with duty ratios from 1:1 to 1:5, for various optical settings and resist systems. This
C.H. Lin, S.D. Tzu, Anthony Yen
openaire   +1 more source

Process dependencies of optical proximity corrections

SPIE Proceedings, 2001
Optical Proximity Correction has emerged as an industry standard technique to reproduce the desired shapes on wafers as pattern dimensions are approaching the optical resolution limits. However secondary effects, if not properly controlled, may impede successful application of this technique.
Franz X. Zach, Donald J. Samuels, Alan C. Thomas, Shahid A. Butt   +3 more
openaire   +1 more source

Adaptive Optical Proximity Correction Using an Optimization Method

7th IEEE International Conference on Computer and Information Technology (CIT 2007), 2007
This paper proposes a new approach to the optical proximity correction (OPC) method which reduces OPC calculation loads by employing an optimization method. OPC is a method of correcting for a mask pattern to improve the fidelity of an image pattern on a silicon wafer.
Tetsuaki Matsunawa, Hirokazu Nosato, Hidenori Sakanashi, Masahiro Murakawa, Eiichi Takahashi, Tsuneo Terasawa, Toshihiko Tanaka, Osamu Suga, Tetsuya Higuchi   +8 more
openaire   +1 more source

Thermal treatment for optical proximity correction

Microelectronic Engineering, 2007
For 32-nm technology node, thermal treatment is one of the process extension techniques with 193-nm ArF lithography equipment and chemically-amplified resist (CAR). However, it is difficult to use these techniques in the manufacture process because the optical proximity effect of thermal effects is quite severe.
openaire   +1 more source

Optical proximity correction for super-resolution technique

SPIE Proceedings, 1995
In order to support next generation ULSI devices, some super resolution techniques are developed. The super resolution technique is effective for smaller pattern but not for larger pattern. This is because the optimum dose is changed, due to the pattern characteristic. However, the z-image profile has sufficient focus latitude. To overcome this problem,
Kazuya Kamon, Wataru Wakamiya, Hitoshi Nagata, Koichi Moriizumi, Teruo Miyamoto, Yasuhito Myoi, Masaaki Tanaka   +6 more
openaire   +1 more source

New approaches to optical proximity correction in photolithography

Microelectronic Engineering, 1999
Two new schemes for optical proximity correction (OPC) have been proposed. Based on the analysis of light intensity distribution, one of the schemes uses both clear and opaque assistant features for OPC. These features are located both inside and adjacent to the mask feature to balance the intensity distribution. Another scheme converts the mask design
Jinglei Du, Qizhong Huang, Jingqin Su, Yongkang Guo, Zheng Cui   +4 more
openaire   +1 more source

Applications of enhanced optical proximity correction models

SPIE Proceedings, 1998
The accurate prediction of relevant optical and other processing effects is the essential first element of optical proximity effect (OPC) methodologies. A quasi-empirical modeling technique has been devised. Starting from standard aerial-image energy deposition, an exponential transfer function is employed to account for saturation effects.
Jack Q. Zhao, Joseph G. Garofalo, James W. Blatchford, Edward Ehrlacher, Ellis Nease   +4 more
openaire   +1 more source

Optical proximity correction with hierarchical Bayes model

SPIE Proceedings, 2015
Optical Proximity Correction (OPC) is one of the most important techniques in today's optical lithography based manufacturing process. Although the most widely used model-based OPC is expected to achieve highly accurate correction, it is also known to be extremely time-consuming. This paper proposes a regression model for OPC using a Hierarchical Bayes
Tetsuaki Matsunawa, Bei Yu, David Z. Pan
openaire   +1 more source

Impact of scanner signatures on optical proximity correction

SPIE Proceedings, 2010
Low pass filtering of mask diffraction orders, in the projection tools used in microelectronics industry, leads to a range of optical proximity effects, OPEs, impacting integrated circuit pattern images. These predictable OPEs can be corrected with various, model-based optical proximity correction methodologies, OPCs , the success of which strongly ...
Jacek K. Tyminski, Tomoyuki Matsuyama, Yen-Liang Lu, Jun-Cheng Lai, Kao-Tun Chen, Yung-Ching Mai, Irene Su, George Bailey   +7 more
openaire   +1 more source

Dynamic feedback controller for optical proximity correction

SPIE Proceedings, 2011
A dynamic feedback controller for Optical Proximity Correction (OPC) in a random logic layout using ArF immersion Lithography is presented. The OPC convergence, characterized by edge placement error (EPE), is subjected to optimization using optical and resist effects described by calibrated models (Calibre® nmOPC simulation platform). By memorizing
Ahmed Omran, Jochen Schacht, Jully Pan, Junjiang Lei, Le Hong, Mohamed Al-Imam, Nick Cobb, Regina Shen, Ryan Chou   +8 more
openaire   +1 more source