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Optical proximity correction with hierarchical Bayes model
Journal of Micro/ Nanolithography, MEMS, and MOEMS, 2016 Optical Proximity Correction (OPC) is one of the most important techniques in today’s optical lithography based manufacturing process. Although the most widely used model-based OPC is expected to achieve highly accurate correction, it is also known to be
Tetsuaki Matsunawa +2 more
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Application of optical proximity correction technology
Science in China Series F: Information Sciences, 2008zbMATH Open Web Interface contents unavailable due to conflicting licenses.
Yici Cai +4 more
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Optical proximity correction (OPC)
Proceedings of the 41st annual Design Automation Conference, 2004As the technology migrates into the deep submicron manufacturing(DSM) era, the critical dimension of the circuits is getting smaller than the lithographic wavelength. The unavoidable light diffraction phenomena in the sub-wavelength technologies have become one of the major factors in the yield rate.
Li-Da Huang, Martin D. F. Wong
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Performance-Based Optical Proximity Correction Methodology
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2010The rapid reduction in critical dimension of integrated circuits has lead to substantial mask data expansion for mask design based on traditional model-based full-chip optical proximity correction (OPC). Conventional EPE-OPC is mainly based on edge placement error (EPE) without consideration of its effect on circuit performance; often resulting in an ...
Siew-Hong Teh +2 more
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Wafer Topography-Aware Optical Proximity Correction
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2006Depth of focus is the major contributor to lithographic process margin. One of the major causes of focus variation is imperfect planarization of fabrication layers. Presently, optical proximity correction (OPC) methods are oblivious to the predictable nature of focus variation arising from wafer topography.
Puneet Gupta 0001 +4 more
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Transferring Optical Proximity Correction (OPC) Effect into Optical Mode
8th International Symposium on Quality Electronic Design (ISQED'07), 2007Because of the ever-decreasing feature size in modern photolithography, the complexity of pattern increases dramatically and tape-out time becomes prolonged. It is desirable to transfer OPC process into optical model for the sake of time. In this report, we introduce a novel method of calculating the OPC effect by modifying the optical model, which is ...
Jianliang Li +2 more
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Characterization of optical proximity correction features
SPIE Proceedings, 2001One-dimensional linewidth alone is an inadequate metric for low-k1 lithography. Critical Dimension metrology and analysis have historically focused on 1-dimensional effects but with low-k1 lithography is has increasingly been found that the process window for acceptable imaging of the full 2D structure is more limited than the process window for CDs ...
John A. Allgair +11 more
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Verifying the "correctness" of your optical proximity correction designs
SPIE Proceedings, 1999The emerging demand for smaller and smaller IC features, undiminished by the delay of next generation stepper technologies, has increased the need for OPC and PSM designs that are becoming critical for leading-edge IC manufacturing. However, modifications made to the original layout by OPC or PSM deign tools in general, exclude the use of conventional ...
Vinod K. Malhotra, Fang C. Chang
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