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Optoelectronic properties of CuO deposited by plasma-enhanced atomic layer deposition

Vacuum
Anne Haggrén, Gabriel Bartholazzi, Lachlan Watson, Daniel Macdonald, Kylie Catchpole, Lachlan Black   +5 more
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Advantages and challenges of plasma enhanced atomic layer deposition

, 2011
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Plasma-enhanced atomic layer deposition of transition metal phosphates

, 2017
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Patterned deposition by plasma enhanced spatial atomic layer deposition

physica status solidi (RRL) – Rapid Research Letters, 2011
AbstractAn atmospheric pressure plasma enhanced atomic layer deposition reactor has been developed, to deposit Al2O3 films from trimethyl aluminum and an He/O2 plasma. This technique can be used for 2D patterned deposition in a single in‐line process by making use of switched localized plasma sources.
Poodt, P.W.G., Kniknie, B., Branca, A,, Winands, G.J.J., Roozeboom, F.   +4 more
openaire   +3 more sources

Plasma-enhanced atomic layer deposition of BaTiO3

Scripta Materialia, 2016
Abstract Among high-k thin films, perovskite BaTiO3 (BTO) is an attractive candidate due to its exceptionally high dielectric constant. In contrast to conventional atomic layer deposition (ALD), plasma-enhanced ALD (PEALD) has several advantages such as lower process temperature, improved film quality and the deposition of a wider spectrum of ...
Peter Schindler, Yongmin Kim, Dickson Thian, Jihwan An, Fritz B. Prinz   +4 more
openaire   +1 more source

Plasma-Enhanced Atomic Layer Deposition of Ni

Japanese Journal of Applied Physics, 2010
Ni plasma enhanced atomic layer deposition (PE-ALD) using bis(dimethylamino-2-methyl-2-butoxo)nickel [Ni(dmamb)2] as a precursor and NH3or H2plasma as a reactant was comparatively investigated. PE-ALD Ni using NH3plasma showed higher growth rate, lower resistivity, and lower C content than that using H2plasma.
Lee, HBR, Bang, SH, Kim, WH, Gu, GH, Lee, YK, Chung, TM, Kim, CG, Park, CG, Kim, H   +8 more
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Plasma-enhanced atomic layer deposition of tungsten nitride

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2016
Tungsten nitride (WN) has potential as an interconnect barrier film. Deposition of WN films with bis(tert-butylimido)bis(dimethylamido)tungsten utilizing plasma-enhanced atomic layer deposition has been investigated over a temperature range of 100–400 °C employing N2, H2/N2, and NH3 remote plasmas.
Mark J. Sowa, Yonas Yemane, Fritz B. Prinz, J Provine   +3 more
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Plasma-enhanced atomic layer deposition for plasmonic TiN

Nanophotonic Materials XIII, 2016
This work presents the low temperature plasma-enhanced atomic layer deposition (PE-ALD) of TiN, a promising plasmonic synthetic metal. The plasmonics community has immediate needs for alternatives to traditional plasmonic materials (e.g. Ag and Au), which lack chemical, thermal, and mechanical stability.
Lauren M. Otto, Aaron T. Hammack, Shaul Aloni, D. Frank Ogletree, Deirdre L. Olynick, Scott Dhuey, Bethanie J. H. Stadler, Adam M. Schwartzberg   +7 more
openaire   +1 more source