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Characteristics and applications of plasma enhanced-atomic layer deposition
Thin Solid Films, 2011Abstract Atomic layer deposition (ALD) is expected to play an important role in future device fabrication due to various benefits, such as atomic level thickness control and excellent conformality. Plasma enhanced ALD (PE-ALD) allows deposition at significantly lower temperatures with better film properties compared to that of conventional thermal ...
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Properties of Aluminum Silicate Deposited by Plasma Enhanced Atomic Layer Deposition
ECS Meeting Abstracts, 2006Abstract not Available.
Jung Wook Lim, Sun Jin Yun, Jin Ho Lee
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Micro and Nanosystems, 2018
As feature sizes of devices shrink every year, deposition and etching processes change to be very challenge, especially for sub-7 nm technology node. The acceptable variability of feature size is expected to be several atoms of silicon/germanium in the future.
Guangjie Yuan +3 more
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As feature sizes of devices shrink every year, deposition and etching processes change to be very challenge, especially for sub-7 nm technology node. The acceptable variability of feature size is expected to be several atoms of silicon/germanium in the future.
Guangjie Yuan +3 more
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Characteristics of ZrAlO Films Deposited by Plasma Enhanced Atomic Layer Deposition
ECS Meeting Abstracts, 2006Abstract not Available.
Sun-Jin Yun, Jung-Wook Lim, Hyun-Tak Kim
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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2006
Ta 2 O 5 films were deposited by plasma-enhanced atomic layer deposition (PEALD) and thermal ALD on native oxide surface (SiOx∕Si). The properties of as-deposited and forming gas annealed films were examined and qualitatively compared with respect to nanostructural, nanochemical, capacitance-voltage and leakage-current–voltage (JL-V), and oxide ...
Diefeng Gu +4 more
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Ta 2 O 5 films were deposited by plasma-enhanced atomic layer deposition (PEALD) and thermal ALD on native oxide surface (SiOx∕Si). The properties of as-deposited and forming gas annealed films were examined and qualitatively compared with respect to nanostructural, nanochemical, capacitance-voltage and leakage-current–voltage (JL-V), and oxide ...
Diefeng Gu +4 more
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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2005
Low via yield caused by low adhesion between Cu and a barrier metal is a cost issue when the atomic layer deposition (ALD) barrier metal process is integrated with Cu interconnection. To overcome this issue, an adhesion layer consisting of Ta-rich TaN obtained by plasma-enhanced ALD [i.e., ALD Ta(N)] is proposed.
Akira Furuya +2 more
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Low via yield caused by low adhesion between Cu and a barrier metal is a cost issue when the atomic layer deposition (ALD) barrier metal process is integrated with Cu interconnection. To overcome this issue, an adhesion layer consisting of Ta-rich TaN obtained by plasma-enhanced ALD [i.e., ALD Ta(N)] is proposed.
Akira Furuya +2 more
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Ferroelectric Tunnel Junction Optimization by Plasma-Enhanced Atomic Layer Deposition
2020 IEEE Silicon Nanoelectronics Workshop (SNW), 2020Ferroelectric tunnel junction (FTJ) based on alloyed HfO 2 and ZrO 2 is emerging as a promising two-terminal device candidate for the crossbar array for high density memory and compute-in-memory. FTJ is able to operate under non-destructive read mechanism as opposed to the ferroelectric capacitor.
Jae Hur +5 more
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Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2015This paper reports on aluminum oxide (Al2O3) thin film gas permeation barriers fabricated by atmospheric pressure atomic layer deposition (APPALD) using trimethylaluminum and an Ar/O2 plasma at moderate temperatures of 80 °C in a flow reactor. The authors demonstrate the ALD growth characteristics of Al2O3 films on silicon and indium tin oxide coated ...
Lukas Hoffmann +5 more
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TRANSPARENT TITANIUM DIOXIDE THIN FILM DEPOSITED BY PLASMA-ENHANCED ATOMIC LAYER DEPOSITION
Integrated Ferroelectrics, 2006ABSTRACT TiO2 thin films were deposited at 200°C on Si (100) and quartz substrates using plasma enhanced atomic layer deposition (PEALD) with alternating supply of reactant source, Ti[N(CH3)2]4, and oxygen plasma, and then were annealed at various temperatures in oxygen ambient using a rapid thermal annealing (RTA) system.
G. X. LIU +7 more
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Properties of AlN grown by plasma enhanced atomic layer deposition
Applied Surface Science, 2011Abstract The influence of growth parameters on the properties of AlN films fabricated by plasma-enhanced atomic layer deposition using trimethylaluminum and ammonia precursors was investigated. The atomic concentrations, refractive index, mass density, crystallinity and surface roughness were studied from the films grown in the temperature range of ...
Bosund, Markus +7 more
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