Results 111 to 120 of about 6,179,454 (334)

Addendum to “Modeling MOSFET Drain Current Non-Gaussian Distribution With Power-Normal Probability Density Function” [Feb 14 154-156] [PDF]

, 2014
Bo Yu, Yuan Yu
openalex   +1 more source

Organic neuromorphic electronics powering intelligent sensory and edge computing systems

InfoMat, EarlyView.
Organic electronic materials are promising candidates for neuromorphic sensing applications, including chemical, physical, visual, and multimodal sensing, owing to their mechanical softness, biocompatibility, and intrinsic ionic–electronic coupling.
Seungjun Woo, Minji Chung, Hyun Woo Song, Seoyoung Kim, Eun Kwang Lee, Joon Hak Oh   +5 more
wiley   +1 more source

A Low-Voltage Electronically Tunable MOSFET-C Voltage-Mode First-Order All-Pass Filter Design [PDF]

, 2013
This paper presents a simple electronically tunable voltage-mode first-order all-pass filter realization with MOSFET-C technique. In comparison to the classical MOSFET-C filter circuits that employ active elements including large number of transistors ...
Cicekoglu, O., Herencsar, N., Metin, B.
core   +1 more source

Quantum Transport in a Nanosize Silicon-on-Insulator Metal-Oxide-Semiconductor

, 2003
An approach is developed for the determination of the current flowing through a nanosize silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFET).
B. Sorée, Balaban S. N., Bordone P., Castella F., Frank D. J., J. T. Devreese, Keldysh L. V., Keldysh L. V., Lundstrom M., M. D. Croitoru, Pokatilov E. P., Prange R. E., V. M. Fomin, V. N. Gladilin, W. Magnus, W. Schoenmaker   +15 more
core   +1 more source

A Low‐Cost and Compact High‐Frequency Gallium Nitride Gradient Power Amplifier for Low‐Field MRI

Magnetic Resonance in Medicine, EarlyView.
ABSTRACT Purpose To reduce the upfront cost of small, low‐field MRI systems, while expanding the capabilities of their gradient systems. Methods A gradient power amplifier was designed to leverage the lowering cost of Gallium Nitride (GaN) power transistors and high speed logic, to achieve high efficiency and responsiveness for driving gradient coils ...
N. Reid Bolding, Jacob Hannan, Christopher Vaughn, Aria Patel, Snow Lin, Jessie E. P. Sun, William Grissom, Mark A. Griswold   +7 more
wiley   +1 more source

A Numerical Study of Scaling Issues for Schottky Barrier Carbon Nanotube Transistors

, 2003
We performed a comprehensive scaling study of Schottky barrier carbon nanotube transistors using self-consistent, atomistic scale simulations. We restrict our attention to Schottky barrier carbon nanotube FETs whose metal source/drain is attached to an ...
Datta, Supriyo, Guo, Jing, Lundstrom, Mark   +2 more
core   +1 more source

Advances in Gate Dielectrics for 2D Electronics

physica status solidi (RRL) – Rapid Research Letters, EarlyView.
This review discusses advanced gate dielectric integration for 2D electronic devices, including layered and nonlayered dielectric materials, while highlighting strategies such as seed‐assisted ALD, transfer methods, and in situ oxidation. By focusing on interface engineering and materials innovation, new routes for scalable, high‐performance 2D ...
Moon‐Chul Jung, Jiwoo Kim, Gwan‐Hyoung Lee   +2 more
wiley   +1 more source

Synthesis of Amorphous‐Crystalline Mixture Boron Nitride for Balanced Resistive Switching Operation

Small, EarlyView.
An amorphous–crystalline mixture BN (acm‐BN) is synthesized through low‐pressure chemical vapor deposition, achieving balanced resistive switching with low SET voltage and stable RESET. High‐resolution transmission electron microscopy reveals that BN films are fully amorphous at 930 °C, a mixed amorphous–crystalline phase is achieved at 990 °C.
Kyung Jin Ahn, Do Kyeong Yun, Mi Hyang Park, Hong Woon Yun, Minh Chien Nguyen, Van Tu Vu, Huamin Li, Pallavi Aggarwal, Woo Jong Yu   +8 more
wiley   +1 more source

The Ferro-Power MOSFET: Enhancing Short-Circuit Robustness in Power Switches With a Ferroelectric Gate Stack

IEEE Access
Power Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) are essential in modern electronics, enabling efficient power conversion and control in a wide range of applications. Wide bandgap semiconductors such as silicon carbide (SiC) and gallium
Marco Boccarossa, Luca Maresca, Alessandro Borghese, Michele Riccio, Giovanni Breglio, Andrea Irace, Giovanni A. Salvatore   +6 more
doaj   +1 more source

Self‐Powered Neuromorphic Touch Sensors Based on Triboelectric Devices: Current Approaches and Open Challenges

Small, EarlyView.
This review outlines how triboelectric self‐powered tactile sensors can be integrated with neuromorphic devices to emulate human touch. It summarizes current coupling strategies, operational modes, and synaptic functions enabled by triboelectric nanogerator (TENG)‐based systems, while highlighting key mechanisms, performance considerations, and future ...
Fabrizio Torricelli, Giuseppina Pace
wiley   +1 more source