Results 91 to 100 of about 1,463,362 (312)

Hardening electronic devices against very high total dose radiation environments [PDF]

, 1972
The possibilities and limitations of hardening silicon semiconductor devices to the high neutron and gamma radiation levels and greater than 10 to the eighth power rads required for the NERVA nuclear engine development are discussed. A comparison is made
Shedd, W., Roosild, S., Dolan, R., Buchanan, B.   +3 more
core   +1 more source

Investigating the Low‐Temperature Phase Stability of the Binary Ta–W System

Advanced Engineering Materials, EarlyView.
Atomistic simulations show that the binary Ta–W system forms ordered intermetallic phases, B2‐TaW and D03‐TaW3, as 0 K ground states. Configurational entropy, however, lowers the free energy of the disordered bcc solid solution, which becomes the stable phase above about 400 K.
Klemens Lechner, Anna Sophie Jelinek, Velislava Terziyska, Peter Wagatha, Wolfram Knabl, Christian Mitterer, Helmut Clemens, David Holec   +7 more
wiley   +1 more source

University of California Radiation Laboratory Report UCRL-769

, 1950
A quarterly summary of reports that have been published on research being conducted at the University of California Radiation ...
University of California. Radiation Laboratory.
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High‐Entropy Alloy Interlayers Toward Advanced Joining for High‐Performance Structural Applications: Current Progress and Emerging Challenges

Advanced Engineering Materials, EarlyView.
HEA interlayers offer a versatile route for joining high‐performance structural materials. Their compositional and structural design regulates interfacial reactions, suppresses brittle IMCs, and improves metallurgical bonding. Sandwich interlayers further integrate defect healing with precipitation strengthening, enabling improved strength–ductility ...
Lin Yuan, Jiafen Song, Jinglong Li, Jiangtao Xiong, Tao Yang   +4 more
wiley   +1 more source

Simulation of the Effect of Solar Radiation on Hardening and Hardened Concrete Wall

, 2010
The purpose of the present study is to assess the effect of solar radiation on the development of thermal stress in hardening and hardened concrete structures. A mathematical model for solar radiation is investigated.
Sheng Xing Wu, Dong Hui Huang, Hai Tao Zhao   +2 more
core   +1 more source

A CMOS X-Band Receiver With Radiation-Hardened LO Generation for Deep-Space Links

IEEE Access
Demand for miniaturization in deep-space probes is increasing as missions seek to reduce overall cost. Along with this trend, transponders, which are essential subsystems for communication and ranging, are also required to be downsized.
Sota Kano, Masahiro Uchida, Ritaro Takenaka, Keisuke Onishi, Tadashi Ichikawa, Naoto Usami, Tetsuya Iizuka   +6 more
doaj   +1 more source

Analysis of Ultraviolet Radiation Wavelengths Causing Hardening and Reduced Elasticity of Collagen Gels In Vitro

Cosmetics, 2018
Regular exposure of facial skin to sunlight promotes wrinkle formation; ultraviolet (UV) radiation causes the skin to harden and lose its elasticity. To study UV damage to the skin in vitro, a short-term in vitro photoaging model is required.
Kazuhisa Maeda
doaj   +1 more source

The Role of Ultra‐Thin Passive Films and Organic Adsorbates on Aluminum Chips for a Friction‐Induced Solid‐State Recycling Process

Advanced Engineering Materials, EarlyView.
Despite benefits to storage stability and handleability of aluminum scrap, octadecyl phosphonic acid (ODPA) SAMs reduce the tensile strength of wires produced using friction‐induced recycling. Etching and methyl diphosphonic acid (MDPA) coatings, however, have little effect.
Timothy D. Goller, Steffen Gabsa, Werner Homberg, Guido Grundmeier   +3 more
wiley   +1 more source

University of California Radiation Laboratory Reports UCRL-1854

, 1952
Quarterly summary report of studies conducted through the University of California Radiation Laboratory.
University of California. Radiation Laboratory.
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Radiation hardening of MOS devices by boron [PDF]

, 1974
A technique is described for radiation hardening of MOS devices and specifically for stabilizing the gate threshold potential at room temperature of a radiation subjected MOS field-effect device with a semiconductor substrate, an insulating layer of ...
Danchenko, V.
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