Random Telegraph Noise Modeling for Circuit Analysis: RTN in Ring Oscillators [PDF]
IEEE Journal of the Electron Devices Society, 2022 In highly scaled MOSFETs, random telegraph noise (RTN) can decrease the reliability and yield of circuits. RTN is produced by charge trapping, which in large devices results in $1/f$ noise.
Mauricio Banaszeski da Silva +2 more
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Random Telegraph Noise Degradation Caused by Hot Carrier Injection in a 0.8 μm-Pitch 8.3Mpixel Stacked CMOS Image Sensor [PDF]
Sensors, 2023 In this work, the degradation of the random telegraph noise (RTN) and the threshold voltage (Vt) shift of an 8.3Mpixel stacked CMOS image sensor (CIS) under hot carrier injection (HCI) stress are investigated. We report for the first time the significant
Calvin Yi-Ping Chao +6 more
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Impact of Hot Carrier Aging on Random Telegraph Noise and Within a Device Fluctuation [PDF]
IEEE Journal of the Electron Devices Society, 2016 For nanometer MOSFETs, charging and discharging a single trap induces random telegraph noise (RTN). When there are more than a few traps, RTN signal becomes complex and appears as within a device fluctuation (WDF). RTN/WDF causes jitters in switch timing
Azrif B. Manut +8 more
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Random Telegraph Noise in 3D NAND Flash Memories [PDF]
Micromachines, 2021 In this paper, we review the phenomenology of random telegraph noise (RTN) in 3D NAND Flash arrays. The main features of such arrays resulting from their mainstream integration scheme are first discussed, pointing out the relevant role played by the ...
Alessandro S. Spinelli +3 more
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Dephasing Dynamics in a Non-Equilibrium Fluctuating Environment [PDF]
Entropy, 2023 We performed a theoretical study of the dephasing dynamics of a quantum two-state system under the influences of a non-equilibrium fluctuating environment. The effect of the environmental non-equilibrium fluctuations on the quantum system is described by
Xiangjia Meng +5 more
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Mechanism of Random Telegraph Noise in 22-nm FDSOI-Based MOSFET at Cryogenic Temperatures [PDF]
Nanomaterials, 2022 In the emerging process-based transistors, random telegraph noise (RTN) has become a critical reliability problem. However, the conventional method to analyze RTN properties may not be suitable for the advanced silicon-on-insulator (SOI)-based ...
Yue Ma +6 more
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Low frequency noise peak near magnon emission energy in magnetic tunnel junctions
AIP Advances, 2014 We report on the low frequency (LF) noise measurements in magnetic tunnel junctions (MTJs) below 4 K and at low bias, where the transport is strongly affected by scattering with magnons emitted by hot tunnelling electrons, as thermal activation of ...
Liang Liu +8 more
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High-Temperature Annealing of Random Telegraph Noise in a Stacked CMOS Image Sensor After Hot-Carrier Stress [PDF]
SensorsThis paper studies the temperature effects on device aging, particularly the random telegraph noise (RTN) degradation and the threshold voltage (Vt) shift in a stacked CMOS image sensor (CIS) caused by hot-carrier stress (HCS). Measurements indicate that
Calvin Yi-Ping Chao +8 more
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Highly stable two-level current fluctuation in complex oxide heterostructures [PDF]
Nature CommunicationsTwo-level systems based on point defects in dielectric oxides offer promising entropy source for random number generators. The random telegraph noise (RTN) generated by the two-level systems is ideal for creating random bit-strings for advanced computing
Doyeop Kim +11 more
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Systematical Investigation of Flicker Noise in 14 nm FinFET Devices towards Stochastic Computing Application [PDF]
Micromachines, 2023 Stochastic computing (SC) is widely known for its high error tolerance and efficient computing ability of complex functions with remarkably simple logic gates. The noise of electronic devices is widely used to be the entropy source due to its randomness.
Danian Dong +8 more
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