Analysis of random telegraph noise in resistive memories: The case of unstable filaments
Micro and Nano Engineering, 2023 Through Random Telegraph Noise (RTN) analysis, valuable information can be provided about the role of defect traps in fine tuning and reading of the state of a nanoelectronic device.
Nikolaos Vasileiadis +4 more
doaj +1 more source
Random telegraph-signal noise in junctionless transistors [PDF]
, 2011 Random telegraph-signal noise (RTN) is measured in junctionless metal-oxide-silicon field-effect transistors (JL MOSFETs) as a function of gate and drain voltage and temperature.
Akhavan, Nima Dehdashti +5 more
core +1 more source
Effect of random telegraph noise on entanglement and nonlocality of a qubit-qutrit system [PDF]
Iranian Journal of Astronomy and Astrophysics, 2017 We study the evolution of entanglement and nonlocality of a non-interacting qubit-qutrit system under the effect of random telegraph noise (RTN) in independent and common environments in Markovian and non-Markovian regimes.
Hakimeh Jaghouri, Samira Nazifkar
doaj +1 more source
Random Telegraph Noise (RTN) Model and Simulation
, 2021 Outline Background of RTN and simulation challenge New RTN simulation flow ...
openaire +1 more source
Impact of Random Telegraph Noise Profiles on Drain-Current Fluctuation During Dynamic Gate Bias [PDF]
, 2014 The influence of random telegraph noise (RTN) in MOSFETs on drain current (Id) during the rise/fall edges of the pulsed gate voltage (Vg) cycle was investigated.
Chun Meng Dou +6 more
core +1 more source
Investigation of the RTN Distribution of nanoscale MOS devices from subthreshold to on-state [PDF]
, 2013 This letter presents a numerical investigation of the statistical distribution of the random telegraph noise (RTN) amplitude in nanoscale MOS devices, focusing on the change of its main features when moving from the subthreshold to the on-state ...
Amoroso, S.M. +6 more
core +1 more source
Efficient quantum transport in a multi-site system combining classical noise and quantum baths
New Journal of Physics, 2020 We study the population dynamics and quantum transport efficiency of a multi-site dissipative system driven by a random telegraph noise (RTN) by using a variational polaron master equation for both linear chain and ring configurations.
Arzu Kurt, Matteo A C Rossi, Jyrki Piilo
doaj +1 more source
Model Implementation of Lorentzian Spectra for Circuit Noise Simulations in the Frequency Domain
IEEE Journal of the Electron Devices Society, 2022 This work presents a new method for the Verilog-A implementation of Lorentzian noise models, in a module called VERILOR, which can automatically generate either Lorentzian or 1/f-like noise spectra depending on the trap density and gate oxide area, for ...
Angeliki Tataridou +2 more
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2017 A new method for on-chip random telegraph noise (RTN) characteristic time constant extraction using the double sampling circuit in an 8.3 Mpixel CMOS image sensor is described.
Calvin Yi-Ping Chao +5 more
doaj +1 more source
The origin of switching noise in GaAs/AlGaAs lateral gated devices [PDF]
, 2005 We have studied the origin of switching (telegraph) noise at low temperature in lateral quantum structures defined electrostatically in GaAs/AlGaAs heterostructures by surface gates.
A. R. Long +12 more
core +1 more source