Results 41 to 50 of about 1,437 (189)

Gate Voltage Dependence of MOSFET Random Telegraph Noise Amplitude at Room and Cryogenic Temperatures

IEEE Journal of the Electron Devices Society
Random telegraph noise (RTN) in 65 nm technology bulk CMOS devices was measured at both 300 K and 1.5 K, and the dependence of noise amplitude on gate voltage was analyzed.
Kiyoshi Takeuchi, Tomoko Mizutani, Takuya Saraya, Hiroshi Oka, Takahiro Mori, Masaharu Kobayashi, Toshiro Hiramoto   +6 more
doaj   +1 more source

Detectors for the James Webb Space Telescope Near-Infrared Spectrograph I: Readout Mode, Noise Model, and Calibration Considerations

, 2007
We describe how the James Webb Space Telescope (JWST) Near-Infrared Spectrograph's (NIRSpec's) detectors will be read out, and present a model of how noise scales with the number of multiple non-destructive reads sampling-up-the-ramp.
Augustyn Waczynski, Bacon C. M., Bernard J. Rauscher, Brent Mott, Bryan Howe, Cheryl Marshall, Chuck Engler, Clifford K. Brambora, Craig Cabelli, David Alexander, Donald N. B. Hall, Donna Wilson, Edward Cheng, Gardner J. P., Ginn Lee, Guido De Marchi, James Garnett, James York, James M. Marsh, Janesick J. R., John Nieznanski, Kamdin B. Shakoorzadeh, Klaus W. Hodapp, Majid Zandian, Markus Loose, Matthew B. Garrison, Michael W. Regan, Miles Smith, Miriam Jurado, Ori Fox, Paolo Strada, Peter Jakobsen, Peter Wallis, Pierre Ferruit, Rebecca Derro, Robert J. Hill, Robert J. Martineau, Selmer Wong‐Anglin, Sridhar S. Manthripragada, Thomas Johnson, Timothy Ellis, Torsten Böker, Wayne D. Roher, Wei Xia‐Serafino, Yiting Wen   +44 more
core   +1 more source

Low frequency noise due to magnetic inhomogeneities in submicron FeCoB/MgO/FeCoB magnetic tunnel junctions [PDF]

, 2011
We report on room temperature low frequency noise due to magnetic inhomogeneities/domain walls (MI/DWs) in elliptic submicron FeCoB/MgO/FeCoB magnetic tunnel junctions with an area between 0.0245 and 0.0675{\mu}m2.
A. Gomez-Ibarlucea, A. Lara, Bednarík J., D. Herranz, F. G. Aliev, G. Reiss, M. Schäfers   +6 more
core   +2 more sources

Investigation on the amplitude of random telegraph noise (RTN) in nanoscale MOSFETs: Scaling limit of “Hole in the inversion layer” model [PDF]

2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2016
In this paper, the widely adopted “hole in the inversion layer” (HIL) model for predicting the amplitude of random telegraph noise (RTN) in nanoscale MOSFETs, is theoretically revisited with focusing on its scaling limit and validation range. It is found that this simple physical model fail to apply on ultra-scaled devices with L<;20nm and/or W< ...
Zhang, Zexuan, Zhang, Zhe, Guo, Shaofeng, Wang, Runsheng, Wang, Xingsheng, Cheng, Binjie, Asenov, Asen, Huang, Ru   +7 more
openaire   +1 more source

An Assessment of the Statistical Distribution of Random Telegraph Noise Time Constants

IEEE Access, 2020
As transistor sizes are downscaled, a single trapped charge has a larger impact on smaller devices and the Random Telegraph Noise (RTN) becomes increasingly important.
Mehzabeen Mehedi, Kean Hong Tok, Jian Fu Zhang, Zhigang Ji, Zengliang Ye, Weidong Zhang, John S. Marsland   +6 more
doaj   +1 more source

Discrete-Trap Effects on 3-D NAND Variability – Part II: Random Telegraph Noise

IEEE Journal of the Electron Devices Society
In Part II of this article we discuss the impact of a discrete treatment of traps on 3-D NAND Flash random telegraph noise (RTN). A higher RTN results when discrete traps are taken into account, that can only be explained by a stronger influence of the ...
Gerardo Malavena, Salvatore M. Amoroso, Andrew R. Brown, Plamen Asenov, Xi-Wei Lin, Victor Moroz, Mattia Giulianini, David Refaldi, Christian Monzio Compagnoni, Alessandro S. Spinelli   +9 more
doaj   +1 more source

RRAM Variability Harvesting for CIM‐Integrated TRNG

Advanced Electronic Materials, EarlyView.
This work demonstrates a compute‐in‐memory‐compatible true random number generator that harvests intrinsic cycle‐to‐cycle variability from a 1T1R RRAM array. Parallel entropy extraction enables high‐throughput bit generation without dedicated circuits. This approach achieves NIST‐compliant randomness and low per‐bit energy, offering a scalable hardware
Ankit Bende, Gokulnath Rajendran, Regina Dittmann, Anupam Chattopadhyay, Vikas Rana   +4 more
wiley   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

Non-Markovian continuous-time quantum walks on lattices with dynamical noise [PDF]

, 2016
We address the dynamics of continuous-time quantum walks on one-dimensional disordered lattices inducing dynamical noise in the system. Noise is described as time-dependent fluctuations of the tunneling amplitudes between adjacent sites, and attention is
Benedetti, Claudia, Bordone, Paolo, Buscemi, Fabrizio, Paris, Matteo G. A.   +3 more
core   +2 more sources

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

Advanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj, Ella Paasio, Sayani Majumdar   +2 more
wiley   +1 more source