Results 51 to 60 of about 1,437 (189)

Review of Memristors for In‐Memory Computing and Spiking Neural Networks

Advanced Intelligent Systems, EarlyView.
Memristors uniquely enable energy‐efficient, brain‐inspired computing by acting as both memory and synaptic elements. This review highlights their physical mechanisms, integration in crossbar arrays, and role in spiking neural networks. Key challenges, including variability, relaxation, and stochastic switching, are discussed, alongside emerging ...
Mostafa Shooshtari, Teresa Serrano‐Gotarredona, Bernabé Linares‐Barranco   +2 more
wiley   +1 more source

Amplified Quantum Correlation via Dynamical Modulation in Qubit‐Qutrit System under Markovian and Non‐Markovian Noise

Advanced Physics Research, EarlyView.
This study proposes an innovative approach to strengthen and amplify entanglement in a hybrid qubit–qutrit system driven by a dynamic field. By analyzing the system's dynamics under both Markovian and non‐Markovian environments, we show that specific field values optimize entanglement.
Polislin Fabrice Wonang, Wenceslas Cyprien Minsta Mi Edoux, Odette Melachio Tiokang, Georges Collince Fouokeng, Alain B. Moubissi, Tchoffo Martin   +5 more
wiley   +1 more source

Error analysis of bit-flip qubits under random telegraph noise for low and high temperature measurement application

, 2020
Achieving small error for qubit gate operations under random telegraph noise (RTN) is of great interest for potential applications in quantum computing and quantum error correction.
Prabhakar, Sanjay
core  

Factorial Hidden Markov Model analysis of Random Telegraph Noise in Resistive Random Access Memories [PDF]

, 2014
This paper presents a new technique to analyze the characteristics of multi-level random telegraph noise (RTN). RTN is dened as an abrupt switching of ei- ther the current or the voltage between discrete values as a result of trapping/de-trapping ...
PAVAN, Paolo, PUGLISI, Francesco Maria
core  

Noise Probe of the Dynamic Phase Separation in La2/3Ca1/3MnO3

, 2000
Giant Random Telegraph Noise (RTN) in the resistance fluctuation of a macroscopic film of perovskite-type manganese oxide La2/3Ca1/3MnO3 has been observed at various temperatures ranging from 4K to 170K, well below the Curie temperature (TC = 210K).
A. Anane, A. Anane, A. Moreo, B. Raquet, B. Raquet, C. H. Booth, E. L. Nagaev, F. Coppinger, G. B. Alers, H. T. Hardner, J. B. Goodenough, J. C. Tolédano, J. H. Scofield, J. M. D. Coey, J. M. de Teresa, J. W. Lynn, J.-P. Renard, L. P. Gor'kov, M. Fath, M. Jaime, M. Lust Lisa, M. Uehara, N. E. Israeloff, N. K. Todd, P. Schlottmann, P. Xiong, R. D. Merithew, S. von Molnár, S. von Molnár, S. von Molnár, S. Wirth, T. Kasuya, V. Podzorov, Y. Tokura, Z. Rubin   +34 more
core   +1 more source

A Comparative Study of Digital Memristor‐Based Processing‐In‐Memory from a Device and Reliability Perspective

Advanced Electronic Materials, Volume 12, Issue 1, 7 January 2026.
Processing‐in‐memory (PIM) architectures based on memristors offer significant potential for low‐power computation and the realization of novel computing paradigms by performing logic operations directly within memory. This review summarizes recent advances in memristor‐based logic techniques, with particular emphasis on reliability considerations and ...
Thomas Neuner, Henriette Padberg, Lior Kornblum, Eilam Yalon, Pedram Khalili Amiri, Shahar Kvatinsky   +5 more
wiley   +1 more source

Random telegraph noise-based analysis of electron traps of sub-30-nm DRAM cell-array transistors in cryogenic operation

Results in Physics
The electron-traps parameters of the fin-type buried-channel-array transistor (BCAT) in a dynamic random-access memory (DRAM) cell is investigated with a random-telegraph-noise (RTN)-based analysis at various temperatures including 77 K.
Sangwon Lee, Ho Jung Lee, Ga Won Yang, Sungju Choi, Jingyu Park, Seonhaeng Lee, Gang-Jun Kim, Namhyun Lee, Yoon Kim, Myounggon Kang, Rock-Hyun Baek, Changhyun Kim, Ickhyun Song, Dae Hwan Kim   +13 more
doaj   +1 more source

Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications

Nanoscale Research Letters, 2020
In this manuscript, recent progress in the area of resistive random access memory (RRAM) technology which is considered one of the most standout emerging memory technologies owing to its high speed, low cost, enhanced storage density, potential ...
Furqan Zahoor, Tun Zainal Azni Zulkifli, Farooq Ahmad Khanday   +2 more
doaj   +1 more source

Dynamics of quantum correlations in colored environments

, 2013
We address the dynamics of entanglement and quantum discord for two non interacting qubits initially prepared in a maximally entangled state and then subjected to a classical colored noise, i.e.
Benedetti, C., Bordone, P., Buscemi, F., Paris, M. G. A.   +3 more
core   +1 more source

Anomalous random telegraph noise in nanoscale transistors as direct evidence of two metastable states of oxide traps

Scientific Reports, 2017
In this paper, a new pattern of anomalous random telegraph noise (RTN), named “reversal RTN” (rRTN) induced by single oxide trap, is observed in the drain current of nanoscale metal-oxide-semiconductor field-effect transistors (MOSFETs) with high-k gate ...
Shaofeng Guo, Runsheng Wang, Dongyuan Mao, Yangyuan Wang, Ru Huang   +4 more
doaj   +1 more source