Results 11 to 20 of about 2,057 (152)
Resistive RAM Technology for SSDs
Springer Series in Advanced Microelectronics, 2017 Resistive RAM (RRAM) technology gathered a significant interest in the last decade for system-on-chip applications in silicon-based CMOS technologies like microcontrollers for wireless sensor nodes in the Internet of Things environment, and automotive electronics.
Cristian Zambelli +2 more
exaly +3 more sources
A compact HSPICE macromodel of resistive RAM
IEICE Electronics Express, 2007 A compact but accurate HSPICE macromodel for single-bit resistive RAM (ReRAM) is proposed in this paper. This compact macromodel uses the minimum number of circuit elements to improve the HSPICE simulation speed. And, the macromodel is verified to show very good agreement with the measurements due to voltage-controlled resistors used as the SET and ...
Dae Hwan Kim +2 more
exaly +3 more sources
Nanosecond Analog Programming of Substoichiometric Silicon Oxide Resistive RAM [PDF]
IEEE Transactions on Nanotechnology, 2016 Slow access time, high power dissipation, and a rapidly approaching scaling limit constitute roadblocks for existing nonvolatile flash memory technologies. A new family of storage devices is needed. Filamentary resistive RAM (ReRAM) offers scalability, potentially sub-10 nm, nanosecond write times and a low power profile.
Montesi, L +6 more
openaire +4 more sources
Impact of Line Resistance Combined with Device Variability on Resistive RAM Memories [PDF]
Advances in Science, Technology and Engineering Systems Journal, 2018 In this paper, the performance and reliability of oxide-based Resistive RAM (ReRAM) memory is investigated in a 28nm FDSOI technology versus interconnects resistivity combined with device variability. Indeed, common problems with ReRAM are related to high variability in operating conditions and low yield. At a cell level ReRAMs suffer from variability.
Hassan Aziza +2 more
openaire +2 more sources
An efficient stream cipher for resistive RAM
IEICE Electronics Express, 2017 Joobeom Yun +2 more
exaly +3 more sources
Resistive and Spintronic RAMs: Device, Simulation, and Applications [PDF]
2018 IEEE 24th International Symposium on On-Line Testing And Robust System Design (IOLTS), 2018 The emergence of non-volatile random access memory technologies, such as resistive and spintronic RAMs are triggering intense interdisciplinary activity. These technologies have the potential of providing many benefits, such as energy efficiency, high integration density, CMOS-compatibility, re-configurability, non-volatility and open the path towards ...
Vatajelu, Elena Ioana +4 more
openaire +2 more sources
Influence of parasitic capacitance variations on 65 nm and 32 nm predictive technology model SRAM core-cells [PDF]
, 2008 The continuous improving of CMOS technology allows the realization of digital circuits and in particular static random access memories that, compared with previous technologies, contain an impressive number of transistors.
Stefano Di Carlo +7 more
core +1 more source
Limits of Breach-Resistant and Snapshot-Oblivious RAMs
, 2023 Oblivious RAMs (ORAMs) are an important cryptographic primitive that enable outsourcing data to a potentially untrusted server while hiding patterns of access to the data. ORAMs provide strong guarantees even in the face of a persistent adversary that views the transcripts of all operations and resulting memory contents.
Persiano, Giuseppe, Yeo, Kevin
openaire +2 more sources
Automating defects simulation and fault modeling for SRAMs [PDF]
, 2008 The continues improvement in manufacturing process density for very deep sub micron technologies constantly leads to new classes of defects in memory devices. Exploring the effect of fabrication defects in future technologies, and identifying new classes
Stefano Di Carlo +9 more
core +1 more source
Memristor-based Random Access Memory: The delayed switching effect could revolutionize memory design [PDF]
, 2015 Memristor’s on/off resistance can naturally store binary bits for non-volatile memories. In this work, we found that memristor’s another peculiar feature that the switching takes place with a time delay (we name it “the delayed switching”) can be used to
Wang, Frank Z. +6 more
core +1 more source