Results 11 to 20 of about 227,405 (293)

Resistive RAM Technology for SSDs

open access: yes, 2017
Resistive RAM (RRAM) technology gathered a significant interest in the last decade for system-on-chip applications in silicon-based CMOS technologies like microcontrollers for wireless sensor nodes in the Internet of Things environment, and automotive electronics.
ZAMBELLI, Cristian, OLIVO, Piero
openaire   +2 more sources

Current–time characteristics of resistive superconducting fault current limiters [PDF]

open access: yes, 2012
Superconducting fault current limiters (SFCLs) may play an important role in power-dense electrical systems. Therefore, it is important to understand the dynamic characteristics of SFCLs.
Burt, Graeme   +2 more
core   +4 more sources

Comprehensive Study of Security and Privacy of Emerging Non-Volatile Memories

open access: yesJournal of Low Power Electronics and Applications, 2021
Several promising non-volatile memories (NVMs) such as magnetic RAM (MRAM), spin-transfer torque RAM (STTRAM), ferroelectric RAM (FeRAM), resistive RAM (RRAM), and phase-change memory (PCM) are being investigated to keep the static leakage within a ...
Mohammad Nasim Imtiaz Khan   +1 more
doaj   +1 more source

Modeling the Impact of Process Variation on Resistive Bridge Defects [PDF]

open access: yes, 2010
Recent research has shown that tests generated without taking process variation into account may lead to loss of test quality. At present there is no efficient device-level modeling technique that models the effect of process variation on resistive ...
Robert Aitken   +9 more
core   +2 more sources

A novel read circuit for RRAM based on RC delay effect

open access: yesElectronics Letters, 2023
In this paper, a novel Resistive Random‐Access Memory (RRAM) read circuit has been designed and verified by simulation based on the RRAM model and parasitic capacitance of the circuit.
Jiabao Ye   +7 more
doaj   +1 more source

Effective Current-Driven Memory Operations for Low-Power ReRAM Applications

open access: yesIEEE Access, 2023
Resistive switching (RS) devices are electronic components which exhibit a resistive state that can be adjusted to different nonvolatile levels via electrical stressing, fueling the development of future resistive memories (ReRAM) and enabling innovative
Albert Cirera   +3 more
doaj   +1 more source

Resistive and Spintronic RAMs: Device, Simulation, and Applications [PDF]

open access: yes2018 IEEE 24th International Symposium on On-Line Testing And Robust System Design (IOLTS), 2018
The emergence of non-volatile random access memory technologies, such as resistive and spintronic RAMs are triggering intense interdisciplinary activity. These technologies have the potential of providing many benefits, such as energy efficiency, high integration density, CMOS-compatibility, re-configurability, non-volatility and open the path towards ...
Vatajelu, Elena Ioana   +4 more
openaire   +3 more sources

Limits of Breach-Resistant and Snapshot-Oblivious RAMs

open access: yes, 2023
Oblivious RAMs (ORAMs) are an important cryptographic primitive that enable outsourcing data to a potentially untrusted server while hiding patterns of access to the data. ORAMs provide strong guarantees even in the face of a persistent adversary that views the transcripts of all operations and resulting memory contents.
Persiano, Giuseppe, Yeo, Kevin
openaire   +2 more sources

Intrinsically Secure Non-Volatile Memory Using ReRAM Devices

open access: yesIEEE Access, 2022
The paper describes a device-level encryption approach for implementing intrinsically secure non-volatile memory (NVM) using resistive RAM (ReRAM). Data are encoded in the ReRAM filament morphology, making it robust to both electrical and optical probing
Junjun Huan   +5 more
doaj   +1 more source

Thermal stability of resistive switching effect in ZnO/BiFeO3 bilayer structure

open access: yesAIP Advances, 2019
Superior thermal stability of resistive switching performance is essential for resistive random access memory (R-RAM) device with high reliability.
H. Y. Zhang   +4 more
doaj   +1 more source

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