Results 11 to 20 of about 244,153 (287)

Resistive RAM Technology for SSDs

, 2017
Resistive RAM (RRAM) technology gathered a significant interest in the last decade for system-on-chip applications in silicon-based CMOS technologies like microcontrollers for wireless sensor nodes in the Internet of Things environment, and automotive electronics.
ZAMBELLI, Cristian, OLIVO, Piero
openaire   +2 more sources

Room-Temperature Voltage Stressing Effects on Resistive Switching of Conductive-Bridging RAM Cells with Cu-Doped SiO2 Films [PDF]

Advances in Materials Science and Engineering, 2014
SiO2 or Cu-doped SiO2 (Cu:SiO2) insulating films combined with Cu or W upper electrodes were constructed on the W/Si substrates to form the conductive-bridging RAM (CB-RAM) cells.
Jian-Yang Lin, Bing-Xun Wang
doaj   +2 more sources

Thermal stability of resistive switching effect in ZnO/BiFeO3 bilayer structure

AIP Advances, 2019
Superior thermal stability of resistive switching performance is essential for resistive random access memory (R-RAM) device with high reliability.
H. Y. Zhang, W. M. Xiong, X. Y. Zhang, Biao Wang, Yue Zheng   +4 more
doaj   +2 more sources

Impact of Line Resistance Combined with Device Variability on Resistive RAM Memories

Advances in Science, Technology and Engineering Systems Journal, 2018
In this paper, the performance and reliability of oxide-based Resistive RAM (ReRAM) memory is investigated in a 28nm FDSOI technology versus interconnects resistivity combined with device variability. Indeed, common problems with ReRAM are related to high variability in operating conditions and low yield. At a cell level ReRAMs suffer from variability.
Hassan Aziza, Pierre Canet, Jeremy Postel-Pellerin   +2 more
openaire   +2 more sources

Effective Current-Driven Memory Operations for Low-Power ReRAM Applications

IEEE Access, 2023
Resistive switching (RS) devices are electronic components which exhibit a resistive state that can be adjusted to different nonvolatile levels via electrical stressing, fueling the development of future resistive memories (ReRAM) and enabling innovative
Albert Cirera, Blas Garrido, Antonio Rubio, Ioannis Vourkas   +3 more
doaj   +1 more source

Resistive and Spintronic RAMs: Device, Simulation, and Applications [PDF]

2018 IEEE 24th International Symposium on On-Line Testing And Robust System Design (IOLTS), 2018
The emergence of non-volatile random access memory technologies, such as resistive and spintronic RAMs are triggering intense interdisciplinary activity. These technologies have the potential of providing many benefits, such as energy efficiency, high integration density, CMOS-compatibility, re-configurability, non-volatility and open the path towards ...
Vatajelu, Elena Ioana, Anghel, Lorena, Portal, Jean-Michel, Bocquet, Marc, Prenat, Guillaume   +4 more
openaire   +3 more sources

Current–time characteristics of resistive superconducting fault current limiters [PDF]

, 2012
Superconducting fault current limiters (SFCLs) may play an important role in power-dense electrical systems. Therefore, it is important to understand the dynamic characteristics of SFCLs.
Burt, Graeme, Blair, Steven Macpherson, Booth, Campbell   +2 more
core   +4 more sources

Modeling the Impact of Process Variation on Resistive Bridge Defects [PDF]

, 2010
Recent research has shown that tests generated without taking process variation into account may lead to loss of test quality. At present there is no efficient device-level modeling technique that models the effect of process variation on resistive ...
Robert Aitken, Kundu, Sandip, Sandip Kundu, Shida Zhong, Khursheed, Syed Saqib, Zhong, Shida, Saqib Khursheed, Bashir M. Al-Hashimi, Aitken, Robert, Al-Hashimi, Bashir   +9 more
core   +2 more sources

Limits of Breach-Resistant and Snapshot-Oblivious RAMs

, 2023
Oblivious RAMs (ORAMs) are an important cryptographic primitive that enable outsourcing data to a potentially untrusted server while hiding patterns of access to the data. ORAMs provide strong guarantees even in the face of a persistent adversary that views the transcripts of all operations and resulting memory contents.
Persiano, Giuseppe, Yeo, Kevin
openaire   +2 more sources

Intrinsically Secure Non-Volatile Memory Using ReRAM Devices

IEEE Access, 2022
The paper describes a device-level encryption approach for implementing intrinsically secure non-volatile memory (NVM) using resistive RAM (ReRAM). Data are encoded in the ReRAM filament morphology, making it robust to both electrical and optical probing
Junjun Huan, Nicholas Olexa, Brett Hochman, Swarup Bhunia, Rashmi Jha, Soumyajit Mandal   +5 more
doaj   +1 more source