Room-Temperature Voltage Stressing Effects on Resistive Switching of Conductive-Bridging RAM Cells with Cu-Doped SiO2 Films [PDF]
Advances in Materials Science and Engineering, 2014 SiO2 or Cu-doped SiO2 (Cu:SiO2) insulating films combined with Cu or W upper electrodes were constructed on the W/Si substrates to form the conductive-bridging RAM (CB-RAM) cells.
Jian-Yang Lin, Bing-Xun Wang
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Thermal stability of resistive switching effect in ZnO/BiFeO3 bilayer structure [PDF]
AIP Advances, 2019 Superior thermal stability of resistive switching performance is essential for resistive random access memory (R-RAM) device with high reliability.
H. Y. Zhang +4 more
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A Cautionary Note When Looking for a Truly Reconfigurable Resistive RAM PUF [PDF]
Transactions on Cryptographic Hardware and Embedded Systems, 2018 The reconfigurable physically unclonable function (PUF) is an advanced security hardware primitive, suitable for applications requiring key renewal or similar refresh functions.
Kai-Hsin Chuang +5 more
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Nanosecond Analog Programming of Substoichiometric Silicon Oxide Resistive RAM [PDF]
IEEE Transactions on Nanotechnology, 2016 Slow access time, high power dissipation, and a rapidly approaching scaling limit constitute roadblocks for existing nonvolatile flash memory technologies. A new family of storage devices is needed. Filamentary resistive RAM (ReRAM) offers scalability, potentially sub-10 nm, nanosecond write times and a low power profile.
Montesi, L +6 more
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Impact of Line Resistance Combined with Device Variability on Resistive RAM Memories [PDF]
Advances in Science, Technology and Engineering Systems Journal, 2018 In this paper, the performance and reliability of oxide-based Resistive RAM (ReRAM) memory is investigated in a 28nm FDSOI technology versus interconnects resistivity combined with device variability. Indeed, common problems with ReRAM are related to high variability in operating conditions and low yield. At a cell level ReRAMs suffer from variability.
Hassan Aziza +2 more
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Comprehensive Study of Security and Privacy of Emerging Non-Volatile Memories
Journal of Low Power Electronics and Applications, 2021 Several promising non-volatile memories (NVMs) such as magnetic RAM (MRAM), spin-transfer torque RAM (STTRAM), ferroelectric RAM (FeRAM), resistive RAM (RRAM), and phase-change memory (PCM) are being investigated to keep the static leakage within a ...
Mohammad Nasim Imtiaz Khan +1 more
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A novel read circuit for RRAM based on RC delay effect
Electronics Letters, 2023 In this paper, a novel Resistive Random‐Access Memory (RRAM) read circuit has been designed and verified by simulation based on the RRAM model and parasitic capacitance of the circuit.
Jiabao Ye +7 more
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Effective Current-Driven Memory Operations for Low-Power ReRAM Applications
IEEE Access, 2023 Resistive switching (RS) devices are electronic components which exhibit a resistive state that can be adjusted to different nonvolatile levels via electrical stressing, fueling the development of future resistive memories (ReRAM) and enabling innovative
Albert Cirera +3 more
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Thermal effects on initial volatile response and relaxation dynamics of resistive RAM devices [PDF]
, 2022 Resistive RAM (RRAM) or memristors are a class of electronic device whose resistance depends on voltage history. The changes in resistance can be divided into two categories, volatile and non-volatile.
Stathopoulos, Spyros +4 more
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Resistive and Spintronic RAMs: Device, Simulation, and Applications [PDF]
2018 IEEE 24th International Symposium on On-Line Testing And Robust System Design (IOLTS), 2018 The emergence of non-volatile random access memory technologies, such as resistive and spintronic RAMs are triggering intense interdisciplinary activity. These technologies have the potential of providing many benefits, such as energy efficiency, high integration density, CMOS-compatibility, re-configurability, non-volatility and open the path towards ...
Vatajelu, Elena Ioana +4 more
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