Results 21 to 30 of about 2,057 (152)

Thermal effects on initial volatile response and relaxation dynamics of resistive RAM devices

open access: yes, 2022
Resistive RAM (RRAM) or memristors are a class of electronic device whose resistance depends on voltage history. The changes in resistance can be divided into two categories, volatile and non-volatile.
Stathopoulos, Spyros   +4 more
core   +1 more source

Architecture of resistive RAM with write driver

open access: yesSolid State Electronics Letters, 2020
Abstract As technological advancements are increasing in the world at a faster rate, the need of miniaturization is also growing parallelly. The scaling of existing MOS technology in nanometre regime has caused some limitations such as drastically increase in leakage current, power consumption and some quantum mechanical effects.
Shashank Kumar Dubey   +5 more
openaire   +1 more source

A configurable operational amplifier based on oxide resistive RAMs [PDF]

open access: yes2018 13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS), 2018
This paper proposes a memristor-based operational amplifier design in which semiconductors resistors are suppressed and replaced by memristors. Such design is developed based on a calibrated memristor model, and offers dynamic configurabilty to realize different gains at reduced chip area.
Hassen Aziza   +2 more
openaire   +1 more source

Resistive-Memory Embedded Unified RAM (R-URAM)

open access: yes, 2009
A disturb-free unified RAM (URAM) is demonstrated. It consists of a nonvolatile memory (NVM) and a capacitorless dynamic random access memory (DRAM) in a single-cell transistor. The NVM function is achieved by the resistive switching of an Al(2)O(3) film,
Kim, Sung-Ho   +2 more
core   +1 more source

March CRF: an Efficient Test for Complex Read Faults in SRAM Memories

open access: yes, 2007
In this paper we study Complex Read Faults in SRAMs, a combination of various malfunctions that affect the read operation in nanoscale memories. All the memory elements involved in the read operation are studied, underlining the causes of the realistic ...
Luigi Dilillo   +5 more
core   +1 more source

Molecular dynamics simulation of amorphous HfO2 for resistive RAM applications

open access: yes, 2014
HfO2 is widely investigated as the favoured material for resistive RAM device implementation. The structural features of HfO2 play a fundamental role in the switching mechanisms governing resistive RAM operations, and a comprehensive understanding of the
BROGLIA, GIULIA   +3 more
core   +1 more source

Oxide based resistive RAM: ON/OFF resistance analysis versus circuit variability [PDF]

open access: yes2014 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT), 2014
A deeper understanding of the impact of variability on Oxide-based Resistive Random Access Memory (so-called OxRRAM) is needed to propose variability tolerant designs to ensure the robustness of the technology. Although research has taken steps to resolve this issue, variability remains an important characteristic for OxRRAMs.
Hassen Aziza   +5 more
openaire   +1 more source

An Improved BCH Code for Crossbar-Based Resistive RAM

open access: yes, 2016
Recently, the Error Correction Code(ECC) circuit has been applied to Resistive RAM(RRAM) that suffers from the process variations to improve the reliability and write power consumption.
Shengming Zhou   +9 more
core   +1 more source

Resistive RAM SET and RESET Switching Voltage Evaluation as an Entropy Source for Random Number Generation

open access: yes, 2020
International audienceThe intrinsic variability of the switching parameters in resistive memories has been a major wall that limits their adoption as the next generation memories.
Aziza, Hassen   +9 more
core   +1 more source

EVOLUTION OF NON-VOLATILE HIGH-SPEED RAM TECHNOLOGY BASED ON MAGNETO-RESISTIVE STRUCTURE

open access: yes, 2022
У тезах розглянуто еволюція технології енерго-незалежної швидкісної оперативної пам'яті на основі магнето-резистивної структури. Визначені переваги та недоліки, та розкрито поняття принципу роботи MRAM.
Дяченко, М. В.   +2 more
core  

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