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DESTINY: A Comprehensive Tool with 3D and Multi-Level Cell Memory Modeling Capability

open access: yesJournal of Low Power Electronics and Applications, 2017
To enable the design of large capacity memory structures, novel memory technologies such as non-volatile memory (NVM) and novel fabrication approaches, e.g., 3D stacking and multi-level cell (MLC) design have been explored.
Sparsh Mittal   +2 more
doaj   +1 more source

Ferroelectric tunnel junctions: current status and future prospect as a universal memory

open access: yesFrontiers in Materials, 2023
The semiconductor industry is actively looking for an all-encompassing memory solution that incorporates the advantageous aspects of current technology. This features non-volatility, like that of Flash memory, high scalability, like that of both Dynamic ...
Urvashi Sharma   +6 more
doaj   +1 more source

Neuroinspired unsupervised learning and pruning with subquantum CBRAM arrays

open access: yesNature Communications, 2018
To realize the potential of resistive RAM crossbar arrays as platforms for neuromorphic computing, reduced network-level energy consumption must be achieved.
Yuhan Shi   +6 more
doaj   +1 more source

The Relationship between the Testicular Blood Flow and the Semen Parameters of Rams during the Selected Periods of the Breeding and Non-Breeding Seasons

open access: yesAnimals, 2022
The study aimed to conduct advanced semen evaluation tests during routine ram examination periods in the breeding and non-breeding seasons and to investigate their correlation with the dynamics of testicular blood flow.
Natalia Kozłowska   +5 more
doaj   +1 more source

Bidirectional Non-Filamentary RRAM as an Analog Neuromorphic Synapse, Part I: Al/Mo/Pr0.7Ca0.3MnO3 Material Improvements and Device Measurements

open access: yesIEEE Journal of the Electron Devices Society, 2018
We report on material improvements to non-filamentary RRAM devices based on Pr0.7Ca0.3MnO3 by introducing an MoOx buffer layer together with a reactive Al electrode, and on device measurements designed to help gauge the performance of these devices as ...
Kibong Moon   +7 more
doaj   +1 more source

Ultralow switching voltage and power consumption of GeS2 thin film resistive switching memory

open access: yesJournal of Advanced Dielectrics, 2021
The coming Big Data Era requires progress in storage and computing technologies. As an emerging memory technology, Resistive RAM (RRAM) has shown its potential in the next generation high-density storage and neuromorphic computing applications, which ...
N. Lyapunov   +9 more
doaj   +1 more source

Analysis of the Electrical ReRAM Device Degradation Induced by Thermal Cross‐Talk

open access: yesAdvanced Electronic Materials, 2023
A switching of resistive memory cells leads to a local accumulation of Joules heat in the device. In resistive RAM (ReRAM) arrays, the heat generated in one cell spreads via common electrode metal lines to the neighboring cells and may cause their ...
Mohammad Al‐Mamun   +2 more
doaj   +1 more source

Extending Non-Volatile Operation to DRAM Cells

open access: yesIEEE Access, 2013
This paper deals with the design and evaluation of novel dynamic random access memory (DRAM) cells that have an oxide-based resistive element added for non-volatile operation.
Wei Wei   +2 more
doaj   +1 more source

High resolution muon tracking with resistive plate chambers [PDF]

open access: yes, 2012
Following their introduction in the physics community in the early '80s the use of Resistive Plate Chambers (RPCs) as charged particles detectors has constantly increased. Low cost per unit area, good time resolution and easy of operation are some of the
Thomay, Christian   +9 more
core   +1 more source

A Cautionary Note When Looking for a Truly Reconfigurable Resistive RAM PUF

open access: yesTransactions on Cryptographic Hardware and Embedded Systems, 2018
The reconfigurable physically unclonable function (PUF) is an advanced security hardware primitive, suitable for applications requiring key renewal or similar refresh functions.
Kai-Hsin Chuang   +5 more
doaj   +1 more source

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