Results 21 to 30 of about 244,153 (287)

DESTINY: A Comprehensive Tool with 3D and Multi-Level Cell Memory Modeling Capability

Journal of Low Power Electronics and Applications, 2017
To enable the design of large capacity memory structures, novel memory technologies such as non-volatile memory (NVM) and novel fabrication approaches, e.g., 3D stacking and multi-level cell (MLC) design have been explored.
Sparsh Mittal, Rujia Wang, Jeffrey Vetter   +2 more
doaj   +1 more source

Ferroelectric tunnel junctions: current status and future prospect as a universal memory

Frontiers in Materials, 2023
The semiconductor industry is actively looking for an all-encompassing memory solution that incorporates the advantageous aspects of current technology. This features non-volatility, like that of Flash memory, high scalability, like that of both Dynamic ...
Urvashi Sharma, Urvashi Sharma, Gulshan Kumar, Gulshan Kumar, Sachin Mishra, Reji Thomas, Reji Thomas   +6 more
doaj   +1 more source

Opto-Electric resistive switching and synaptic emulation in lead-free perovskite film

, 2021
Here we demonstrate a lead-free methyl ammonium bismuth iodide (MBI) perovskite based electrochemical metallization dependent resistive RAM (Re-RAM) device. The devices exhibited multi-bit storage ability and a sturdy ON/OFF ratio of 104. Complete change
Zhang, Yuting, Yuting Zhang, Poddar, Swapnadeep, Fan, Zhiyong, Swapnadeep Poddar, Qianpeng Zhang, Zhang, Qianpeng, Zhiyong Fan, Yiyi Zhu, Zhu, Yiyi   +9 more
core   +1 more source

Neuroinspired unsupervised learning and pruning with subquantum CBRAM arrays

Nature Communications, 2018
To realize the potential of resistive RAM crossbar arrays as platforms for neuromorphic computing, reduced network-level energy consumption must be achieved.
Yuhan Shi, Leon Nguyen, Sangheon Oh, Xin Liu, Foroozan Koushan, John R. Jameson, Duygu Kuzum   +6 more
doaj   +1 more source

The Relationship between the Testicular Blood Flow and the Semen Parameters of Rams during the Selected Periods of the Breeding and Non-Breeding Seasons

Animals, 2022
The study aimed to conduct advanced semen evaluation tests during routine ram examination periods in the breeding and non-breeding seasons and to investigate their correlation with the dynamics of testicular blood flow.
Natalia Kozłowska, Ricardo Faundez, Kamil Borzyszkowski, Sebastian Dąbrowski, Tomasz Jasiński, Małgorzata Domino   +5 more
doaj   +1 more source

Nano Resistive Memory (Re-RAM) Devices and their Applications

Reviews on Advanced Materials Science, 2019
Use of solid state ionic conductors the so-called Solid Electrolytes has brought new impetus to the field of solid state memories namely resistive random access memory (Re-RAM).
Dash Chandra Sekhar, Prabaharan S. R. S.
doaj   +1 more source

Bidirectional Non-Filamentary RRAM as an Analog Neuromorphic Synapse, Part I: Al/Mo/Pr_0.7Ca_0.3MnO₃ Material Improvements and Device Measurements

IEEE Journal of the Electron Devices Society, 2018
We report on material improvements to non-filamentary RRAM devices based on Pr0.7Ca0.3MnO3 by introducing an MoOx buffer layer together with a reactive Al electrode, and on device measurements designed to help gauge the performance of these devices as ...
Kibong Moon, Alessandro Fumarola, Severin Sidler, Junwoo Jang, Pritish Narayanan, Robert M. Shelby, Geoffrey W. Burr, Hyunsang Hwang   +7 more
doaj   +1 more source

Ultralow switching voltage and power consumption of GeS2 thin film resistive switching memory

Journal of Advanced Dielectrics, 2021
The coming Big Data Era requires progress in storage and computing technologies. As an emerging memory technology, Resistive RAM (RRAM) has shown its potential in the next generation high-density storage and neuromorphic computing applications, which ...
N. Lyapunov, C. H. Suen, C. M. Wong, Xiaodan Tang, Z. L. Ho, K. Zhou, X. X. Chen, H. M. Liu, Xiaoyuan Zhou, J. Y. Dai   +9 more
doaj   +1 more source

Analysis of the Electrical ReRAM Device Degradation Induced by Thermal Cross‐Talk

Advanced Electronic Materials, 2023
A switching of resistive memory cells leads to a local accumulation of Joules heat in the device. In resistive RAM (ReRAM) arrays, the heat generated in one cell spreads via common electrode metal lines to the neighboring cells and may cause their ...
Mohammad Al‐Mamun, Amrita Chakraborty, Marius Orlowski   +2 more
doaj   +1 more source

Extending Non-Volatile Operation to DRAM Cells

IEEE Access, 2013
This paper deals with the design and evaluation of novel dynamic random access memory (DRAM) cells that have an oxide-based resistive element added for non-volatile operation.
Wei Wei, Kazuteru Namba, Fabrizio Lombardi   +2 more
doaj   +1 more source