Results 31 to 40 of about 2,221 (294)
Memristor-based Random Access Memory: The delayed switching effect could revolutionize memory design [PDF]
, 2015 Memristor’s on/off resistance can naturally store binary bits for non-volatile memories. In this work, we found that memristor’s another peculiar feature that the switching takes place with a time delay (we name it “the delayed switching”) can be used to
Wang, Frank Z. +6 more
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Resistive RAM SET and RESET Switching Voltage Evaluation as an Entropy Source for Random Number Generation [PDF]
, 2020 International audienceThe intrinsic variability of the switching parameters in resistive memories has been a major wall that limits their adoption as the next generation memories.
Aziza, Hassen +9 more
core +1 more source
Neuroinspired unsupervised learning and pruning with subquantum CBRAM arrays
Nature Communications, 2018 To realize the potential of resistive RAM crossbar arrays as platforms for neuromorphic computing, reduced network-level energy consumption must be achieved.
Yuhan Shi +6 more
doaj +1 more source
Animals, 2022 The study aimed to conduct advanced semen evaluation tests during routine ram examination periods in the breeding and non-breeding seasons and to investigate their correlation with the dynamics of testicular blood flow.
Natalia Kozłowska +5 more
doaj +1 more source
EVOLUTION OF NON-VOLATILE HIGH-SPEED RAM TECHNOLOGY BASED ON MAGNETO-RESISTIVE STRUCTURE [PDF]
, 2022 У тезах розглянуто еволюція технології енерго-незалежної швидкісної оперативної пам'яті на основі магнето-резистивної структури. Визначені переваги та недоліки, та розкрито поняття принципу роботи MRAM.
Дяченко, М. В. +2 more
core
Nano Resistive Memory (Re-RAM) Devices and their Applications
Reviews on Advanced Materials Science, 2019 Use of solid state ionic conductors the so-called Solid Electrolytes has brought new impetus to the field of solid state memories namely resistive random access memory (Re-RAM).
Dash Chandra Sekhar, Prabaharan S. R. S.
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2018 We report on material improvements to non-filamentary RRAM devices based on Pr0.7Ca0.3MnO3 by introducing an MoOx buffer layer together with a reactive Al electrode, and on device measurements designed to help gauge the performance of these devices as ...
Kibong Moon +7 more
doaj +1 more source
Ultralow switching voltage and power consumption of GeS2 thin film resistive switching memory
Journal of Advanced Dielectrics, 2021 The coming Big Data Era requires progress in storage and computing technologies. As an emerging memory technology, Resistive RAM (RRAM) has shown its potential in the next generation high-density storage and neuromorphic computing applications, which ...
N. Lyapunov +9 more
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Analysis of the Electrical ReRAM Device Degradation Induced by Thermal Cross‐Talk
Advanced Electronic Materials, 2023 A switching of resistive memory cells leads to a local accumulation of Joules heat in the device. In resistive RAM (ReRAM) arrays, the heat generated in one cell spreads via common electrode metal lines to the neighboring cells and may cause their ...
Mohammad Al‐Mamun +2 more
doaj +1 more source
In-place Repair for Resistive Memories Utilizing Complementary Resistive Switches [PDF]
, 2016 Recent advances in resistive memory technologies have demonstrated their potential to serve as next generation random access memories (RAM) which are fast, low-power, ultra-dense, and nonvolatile.
Kwang-Ting Cheng +7 more
core +1 more source