Results 31 to 40 of about 2,057 (152)

Room-Temperature Voltage Stressing Effects on Resistive Switching of Conductive-Bridging RAM Cells with Cu-Doped SiO2 Films [PDF]

open access: yes, 2014
SiO2 or Cu-doped SiO2 (Cu:SiO2) insulating films combined with Cu or W upper electrodes were constructed on the W/Si substrates to form the conductive-bridging RAM (CB-RAM) cells.
Bing-Xun Wang, Jian-Yang Lin
core   +1 more source

In-place Repair for Resistive Memories Utilizing Complementary Resistive Switches

open access: yes, 2016
Recent advances in resistive memory technologies have demonstrated their potential to serve as next generation random access memories (RAM) which are fast, low-power, ultra-dense, and nonvolatile.
Kwang-Ting Cheng   +7 more
core   +1 more source

Resistive RAM: Simulation and Modeling for Reliable Design [PDF]

open access: yes, 2017
Las tecnologías emergentes de resistencia variable o resistencia-commutativa, Resistive-Switching (RS) technologies, están consideradas como una de las alternativas más prometedoras para el futuro de aplicaciones electrónicas de almacenamiento y sistemas de computación.
openaire   +2 more sources

Resistive RAM-Centric Computing: Design and Modeling Methodology

open access: yesIEEE Transactions on Circuits and Systems I: Regular Papers, 2017
Memory-centric computing with on-chip non-volatile memories provides unique opportunities for native and local information processing in an energy-efficient manner. Design and modeling methodology based on resistive random access memory (RRAM) is presented in this paper.
Haitong Li   +3 more
openaire   +1 more source

Rammed Earth stabilised with waste materials: a sustainable and resistant solution [PDF]

open access: yesIOP Conference Series: Earth and Environmental Science, 2019
Abstract Earthen dwellings are part of the vernacular architecture and cultural heritage of many countries in the Mediterranean region, and a renovated interest towards these types of structures is now widespread in the same countries mainly due to sustainability reasons.
Arrigoni A.   +4 more
openaire   +2 more sources

Investigation of the potentialities of Vertical Resistive RAM (VRRAM) for neuromorphic applications

open access: yes, 2015
International audienceCombining Resistive RAM concept with Vertical NAND technology and design, Vertical RRAM (VRRAM) was recently proposed as a cost-effective and extensible technology for future mass data storage applications [1].
Carabasse, C.   +35 more
core   +1 more source

Ram resistance of a seasonal snowcover

open access: yesMAUSAM, 1984
In this paper modified formula has been derived for working out Ram resistance of snowcover considering coefficient of restitution. It has an operational value in avalanche forecasting.
openaire   +2 more sources

Configurable Operational Amplifier Architectures Based on Oxide Resistive RAMs [PDF]

open access: yesJournal of Circuits, Systems and Computers, 2019
This paper introduces memristor-based operational amplifiers (OpAmps) in which semiconductor resistors are suppressed and replaced by memristors. The ability of the memristive elements to hold several resistance states is exploited to design programmable closed-loop OpAmps. An inverting OpAmp, an integrator and a differentiator are studied.
Hassen Aziza   +3 more
openaire   +1 more source

Co-resistance to retinoic acid and TRAIL by insertion mutagenesis into RAM [PDF]

open access: yesOncogene, 2006
Retinoic acid (RA), used as first-line therapy for acute promyelocytic leukemia (APL), exerts its antileukemic activity by inducing blast differentiation and activating tumor-selective TNF-related apoptosis-inducing ligand (TRAIL) signaling. To identify downstream mediators of RA signaling, we used retrovirus-mediated insertion mutagenesis in PLB985 ...
W, Yin   +3 more
openaire   +2 more sources

Opto-Electric resistive switching and synaptic emulation in lead-free perovskite film

open access: yes, 2021
Here we demonstrate a lead-free methyl ammonium bismuth iodide (MBI) perovskite based electrochemical metallization dependent resistive RAM (Re-RAM) device. The devices exhibited multi-bit storage ability and a sturdy ON/OFF ratio of 104. Complete change
Zhang, Yuting   +9 more
core   +1 more source

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