Results 41 to 50 of about 244,153 (287)

Comprehensive Study of SDC Memristors for Resistive RAM Applications

open access: yesEnergies
Memristors have garnered considerable attention within the scientific community as devices for emerging construction of Very Large Scale Integration (VLSI) systems.
Bartłomiej Garda, Karol Bednarz
doaj   +1 more source

An Energy-Efficient Current-Controlled Write and Read Scheme for Resistive RAMs (RRAMs)

open access: yesIEEE Access, 2020
Energy efficiency remains one of the main factors for improving the key performance markers of RRAMs to support IoT edge devices. This paper proposes a simple and feasible low power design scheme which can be used as a powerful tool for energy reduction ...
H. Aziza   +4 more
doaj   +1 more source

An energy-efficient in-memory computing architecture for survival data analysis based on resistive switching memories

open access: yesFrontiers in Neuroscience, 2022
One of the objectives fostered in medical science is the so-called precision medicine, which requires the analysis of a large amount of survival data from patients to deeply understand treatment options.
Andrea Baroni   +11 more
doaj   +1 more source

A Dual-Programmable 2M NOR Flash Architecture for Energy-Efficient In-Memory Computing. [PDF]

open access: yesAdv Sci (Weinh)
In conventional NOR Flash, the access transistor occupies area but stores no information. Here, it is repurposed as a programmable second memory device that plays two functional roles: an analog memory element that lowers the minimum read current from 72.7 nA to 4.22 pA, and a current‐path gating element enabling true‐off pruning and current‐range ...
Kim S, Ryu D, Kim H, Jung S, Kim MH.
europepmc   +2 more sources

A configurable operational amplifier based on oxide resistive RAMs [PDF]

open access: yes2018 13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS), 2018
This paper proposes a memristor-based operational amplifier design in which semiconductors resistors are suppressed and replaced by memristors. Such design is developed based on a calibrated memristor model, and offers dynamic configurabilty to realize different gains at reduced chip area.
Hassen Aziza   +2 more
openaire   +2 more sources

EVOLUTION OF NON-VOLATILE HIGH-SPEED RAM TECHNOLOGY BASED ON MAGNETO-RESISTIVE STRUCTURE

open access: yes, 2022
У тезах розглянуто еволюція технології енерго-незалежної швидкісної оперативної пам'яті на основі магнето-резистивної структури. Визначені переваги та недоліки, та розкрито поняття принципу роботи MRAM.
Дяченко, М. В.   +2 more
core  

Diabetes‐Associated Cognitive Impairment: Pathophysiology and Emerging Therapies

open access: yesAnnals of Clinical and Translational Neurology, EarlyView.
ABSTRACT Diabetes‐associated cognitive impairment (DACI) is a common yet underrecognized condition, manifesting along a spectrum from mild cognitive impairment to dementia. DACI encompasses patients who develop vascular dementia (VaD) or Alzheimer's disease (AD) with diabetes as a risk factor; however, in certain patients, particularly those lacking ...
Osman Corbali   +4 more
wiley   +1 more source

Design and Analysis of an Ultra-Dense, Low-Leakage, and Fast FeFET-Based Random Access Memory Array

open access: yesIEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2019
High static power associated with static random access memory (SRAM) represents a bottleneck in increasing the amount of on-chip memory. Novel, emerging nonvolatile memories such as spintransfer torque magnetic random access memory (STT-RAM), resistive ...
Dayane Reis   +11 more
doaj   +1 more source

A Simplified Laminar Flow Model for the Pultrusion of Glass Fiber/Polyethylene Terephthalate Commingled Yarns

open access: yesAdvanced Engineering Materials, EarlyView.
A simplified thermoplastic pultrusion model is developed to predict thermal fields in glass fiber/polyethylene terephthalate (GF/PET) composites with reduced computational cost. By combining effective material homogenization, validation against literature data, and Gaussian‐process‐based optimization, the study reveals how heating limits, pulling speed,
Elder Soares   +3 more
wiley   +1 more source

Molecular dynamics simulation of amorphous HfO2 for resistive RAM applications

open access: yes, 2014
HfO2 is widely investigated as the favoured material for resistive RAM device implementation. The structural features of HfO2 play a fundamental role in the switching mechanisms governing resistive RAM operations, and a comprehensive understanding of the
BROGLIA, GIULIA   +7 more
core   +1 more source

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