Results 41 to 50 of about 227,405 (293)
Comprehensive Study of SDC Memristors for Resistive RAM Applications
EnergiesMemristors have garnered considerable attention within the scientific community as devices for emerging construction of Very Large Scale Integration (VLSI) systems.
Bartłomiej Garda, Karol Bednarz
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An Energy-Efficient Current-Controlled Write and Read Scheme for Resistive RAMs (RRAMs)
IEEE Access, 2020 Energy efficiency remains one of the main factors for improving the key performance markers of RRAMs to support IoT edge devices. This paper proposes a simple and feasible low power design scheme which can be used as a powerful tool for energy reduction ...
H. Aziza +4 more
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A configurable operational amplifier based on oxide resistive RAMs [PDF]
2018 13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS), 2018 This paper proposes a memristor-based operational amplifier design in which semiconductors resistors are suppressed and replaced by memristors. Such design is developed based on a calibrated memristor model, and offers dynamic configurabilty to realize different gains at reduced chip area.
Hassen Aziza +2 more
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Resistive-Memory Embedded Unified RAM (R-URAM)
, 2009 A disturb-free unified RAM (URAM) is demonstrated. It consists of a nonvolatile memory (NVM) and a capacitorless dynamic random access memory (DRAM) in a single-cell transistor. The NVM function is achieved by the resistive switching of an Al(2)O(3) film,
Kim, Sung-Ho +2 more
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Pharmacological chromatin remodeling enhances response to estrogen therapy in ER+ breast cancer
Molecular Oncology, EarlyView.Estrogen therapy elicits clinical benefit in ~ 30% of patients with endocrine‐resistant estrogen receptor (ER)‐positive breast cancer. Based on findings that ER transcriptional activation underlies response to estrogen therapy, we tested the effects of epigenetic dysregulation via pharmacological inhibition of histone deacetylases (HDACi).
Anneka L. Johnson Thomas +16 more
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Design and Analysis of an Ultra-Dense, Low-Leakage, and Fast FeFET-Based Random Access Memory Array
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2019 High static power associated with static random access memory (SRAM) represents a bottleneck in increasing the amount of on-chip memory. Novel, emerging nonvolatile memories such as spintransfer torque magnetic random access memory (STT-RAM), resistive ...
Dayane Reis +11 more
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Resistive Switching in the Cu/Si/SiO2/CdS/CuO/Cu Structure Fabricated at Room Temperature
Tikrit Journal of Pure Science, 2022 This work investigates CuO and CdS (material as nanoparticles mixed with a polymer (Cellulose Acetate)) – based ReRAM having stable resistive switching. It also investigates a new composition of a memory which is constructed with silicon as a pedestal,
Haneafa Yahya Najm
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Influence of parasitic capacitance variations on 65 nm and 32 nm predictive technology model SRAM core-cells [PDF]
, 2008 The continuous improving of CMOS technology allows the realization of digital circuits and in particular static random access memories that, compared with previous technologies, contain an impressive number of transistors.
Stefano Di Carlo +7 more
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Advanced Engineering Materials, EarlyView.A simplified thermoplastic pultrusion model is developed to predict thermal fields in glass fiber/polyethylene terephthalate (GF/PET) composites with reduced computational cost. By combining effective material homogenization, validation against literature data, and Gaussian‐process‐based optimization, the study reveals how heating limits, pulling speed,
Elder Soares +3 more
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RAM function is dependent on Kapβ2-mediated nuclear entry [PDF]
, 2014 Eukaryotic gene expression is dependent on the modification of the first transcribed nucleotide of pre-mRNA by the addition of the 7-methylguanosine cap.
Gonatopoulos-Pournatzis, Thomas +1 more
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