Results 51 to 60 of about 2,221 (294)
Nanoscale Ni/Mo/MoO3/Ni memristor for synaptic applications
Electronics LettersFor the first time, a physics‐based modelling of a nanoscale Ni/Mo/MoO3/Ni memristor is presented in this letter by inserting a ‘Mo:Capping layer’ between the top electrode (Ni) and the insulating layer (MoO3).
Maryala Praveen +2 more
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Emulating the electrical activity of the neuron using a silicon oxide RRAM cell
Frontiers in Neuroscience, 2016 In recent years, formidable effort has been devoted to exploring the potential of Resistive RAM (RRAM) devices to model key features of biological synapses.
Adnan eMehonic, Anthony eKenyon
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Frontiers in Neuroscience, 2022 One of the objectives fostered in medical science is the so-called precision medicine, which requires the analysis of a large amount of survival data from patients to deeply understand treatment options.
Andrea Baroni +11 more
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Pharmacological chromatin remodeling enhances response to estrogen therapy in ER+ breast cancer
Molecular Oncology, EarlyView.Estrogen therapy elicits clinical benefit in ~ 30% of patients with endocrine‐resistant estrogen receptor (ER)‐positive breast cancer. Based on findings that ER transcriptional activation underlies response to estrogen therapy, we tested the effects of epigenetic dysregulation via pharmacological inhibition of histone deacetylases (HDACi).
Anneka L. Johnson Thomas +16 more
wiley +1 more source
Electrical Characterization of HfO2 Based Resistive RAM Devices Having Different Bottom Electrode Metallizations [PDF]
, 2018 HfO2 based resistive RAM devices as the important candidates of future embedded non-volatile memory technology were investigated using state of art physical and electrical characterization methods.
Tekin, S. B. +3 more
core +1 more source
Comprehensive Study of SDC Memristors for Resistive RAM Applications
EnergiesMemristors have garnered considerable attention within the scientific community as devices for emerging construction of Very Large Scale Integration (VLSI) systems.
Bartłomiej Garda, Karol Bednarz
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An Energy-Efficient Current-Controlled Write and Read Scheme for Resistive RAMs (RRAMs)
IEEE Access, 2020 Energy efficiency remains one of the main factors for improving the key performance markers of RRAMs to support IoT edge devices. This paper proposes a simple and feasible low power design scheme which can be used as a powerful tool for energy reduction ...
H. Aziza +4 more
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Advanced Engineering Materials, EarlyView.A simplified thermoplastic pultrusion model is developed to predict thermal fields in glass fiber/polyethylene terephthalate (GF/PET) composites with reduced computational cost. By combining effective material homogenization, validation against literature data, and Gaussian‐process‐based optimization, the study reveals how heating limits, pulling speed,
Elder Soares +3 more
wiley +1 more source
Design and Analysis of an Ultra-Dense, Low-Leakage, and Fast FeFET-Based Random Access Memory Array
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2019 High static power associated with static random access memory (SRAM) represents a bottleneck in increasing the amount of on-chip memory. Novel, emerging nonvolatile memories such as spintransfer torque magnetic random access memory (STT-RAM), resistive ...
Dayane Reis +11 more
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Resistive Switching in the Cu/Si/SiO2/CdS/CuO/Cu Structure Fabricated at Room Temperature
Tikrit Journal of Pure Science, 2022 This work investigates CuO and CdS (material as nanoparticles mixed with a polymer (Cellulose Acetate)) – based ReRAM having stable resistive switching. It also investigates a new composition of a memory which is constructed with silicon as a pedestal,
Haneafa Yahya Najm
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