Results 51 to 60 of about 244,153 (287)

Enhancing Low‐Temperature Performance of Sodium‐Ion Batteries via Anion‐Solvent Interactions

Advanced Functional Materials, EarlyView.
DOL is introduced into electrolytes as a co‐solvent, increasing slat solubility, ion conductivity, and the de‐solvent process, and forming an anion‐rich solvent shell due to its high interaction with anion. With the above virtues, the batteries using this electrolyte exhibit excellent cycling stability at low temperatures. Abstract Sodium‐ion batteries
Cheng Zheng, Qian Yao, Yanan Sun, Hongyu Lv, Zhongchao Bai, Guoliang Zhang, Nana Wang, Jian Yang   +7 more
wiley   +1 more source

Insertion of Ag Layer in TiN/SiN_x/TiN RRAM and Its Effect on Filament Formation Modeled by Monte Carlo Simulation

IEEE Access, 2020
In this study, the electrical characteristics of TiN/SiNx/TiN and TiN/Ag/SiNx/TiN RRAMs were thoroughly investigated through I-V measurements. Our novel Ag-inserted silicon nitride-based resistive switching memory (RRAM) achieved switching operation at ...
Yeon-Joon Choi, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Kyungho Hong, Chae Soo Kim, Sungjun Kim, Seongjae Cho, Byung-Gook Park   +9 more
doaj   +1 more source

Resistive Switching in the Cu/Si/SiO2/CdS/CuO/Cu Structure Fabricated at Room Temperature

Tikrit Journal of Pure Science, 2022
This work investigates CuO and CdS (material as nanoparticles mixed with a polymer (Cellulose Acetate)) – based ReRAM having stable resistive switching. It also investigates a new composition of a memory which  is constructed with silicon as a pedestal,
Haneafa Yahya Najm
doaj   +1 more source

Oxide based resistive RAM: ON/OFF resistance analysis versus circuit variability [PDF]

2014 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT), 2014
A deeper understanding of the impact of variability on Oxide-based Resistive Random Access Memory (so-called OxRRAM) is needed to propose variability tolerant designs to ensure the robustness of the technology. Although research has taken steps to resolve this issue, variability remains an important characteristic for OxRRAMs.
Hassen Aziza, Haithem Ayari, Santhosh Onkaraiah, Jean-Michel Portal, Mathieu Moreau, Marc Bocquet   +5 more
openaire   +1 more source

Electrically Induced Phase Transition and Synaptic Functionality in MoTe2/Graphene Memristors

Advanced Functional Materials, EarlyView.
An electrically induced reversible 2H ↔ 1T′ phase transition is demonstrated in a vertical Au/Ti/MoTe2/graphene memristor with a laterally contacted graphene electrode. Resistive switching proceeds through a compositionally invariant amorphous/2H ↔ amorphous/1T′ transformation, in which a self‐formed amorphous MoTe2 interfacial region is proposed to ...
Chien‐Hua Wang, Mu‐Pai Lee, Jhen‐Dong Tsai, Liang‐Ying Hsieh, Jui‐Yuan Chen, Chun‐Wei Huang, Yen‐Fu Lin, Wen‐Wei Wu   +7 more
wiley   +1 more source

Shining light on devices: New perspectives in non-volatile memory device and material investigation [PDF]

APL Electronic Devices
Non-volatile memory (NVMe) technologies, including resistive random access memory (RAM), 2D memristors, and ferroelectric RAM, offer major improvements in data storage and computational systems.
Giuliana Di Martino, Dawn M. Kelly, Atif Jan   +2 more
doaj   +1 more source

Tamper-sensitive pre-formed ReRAM-based PUFs: Methods and experimental validation

Frontiers in Nanotechnology, 2022
In this paper, we present the characterization of pre-formed resistive random access memories to design physical unclonable functions and experimentally validate inherent properties such as tamper sensitivity and a self-destroy mode.
Taylor Wilson, Bertrand Cambou
doaj   +1 more source

GeS as an Emerging OTS Material: Atomic Structure and Modeling of ON/OFF Switching

Advanced Functional Materials, EarlyView.
The structural puzzle of glassy GeS, an advanced memory‐selector material, has finally been disentangled, revealing a patchwork of mixed tetrahedral and trigonal species. Under a high electric field, over‐ and under‐coordinated Ge and S defects, together with three‐membered rings, form an interconnected network associated with localized and extended ...
Andrey Tverjanovich, Jörg C. Neuefeind, Chris J. Benmore, Daniele Fontanari, Anton Sokolov, Maxim Khomenko, Shinji Kohara, Aleksei Bytchkov, Takeshi Usuki, Maria Bokova, Mohammad Kassem, Pascal Masselin, Mariana Milochova, Eugene Bychkov   +13 more
wiley   +1 more source

Resistive RAM SET and RESET Switching Voltage Evaluation as an Entropy Source for Random Number Generation

, 2020
International audienceThe intrinsic variability of the switching parameters in resistive memories has been a major wall that limits their adoption as the next generation memories.
Aziza, Hassen, Mathieu Moreau, Jeremy Postel-Pellerin, Moreau, Mathieu, Adnan Harb, Harb, Adnan, Postel-Pellerin, Jeremy, Bazzi, Hussein, Hussein Bazzi, Hassen Aziza   +9 more
core   +1 more source

Neuromorphic Devices for Extreme Environments: State‐Variable Reliability and Stabilization Strategies

Advanced Functional Materials, EarlyView.
Neuromorphic devices for extreme environments are interpreted through the physical states that store and process information. Radiation, temperature extremes, and vacuum can perturb vacancies, filaments, trapped charges, polarization, interfaces, and readout signals.
Taehyun Park, Geon Park, Junhyung Cho, Jaechan Song, Wangmyung Choi, Jaehyun Hur, Nicola Gasparini, Hocheon Yoo   +7 more
wiley   +1 more source