Results 51 to 60 of about 2,057 (152)

Sneak path current equivalent circuits and reading margin analysis of complementary resistive switches based 3D stacking crossbar memories

, 2014
Sneak path currents of resistive memories is an important issue. They increase with increasing memory size and should be minimized for a usable resistive memory.
Mutlu, Reşat, Karakulak, Ertuğrul, Uçar, Erdem   +2 more
core   +1 more source

Dielectric morphology and RRAM resistive switching characteristics

, 2014
The connection between the bi-polar hafnia-based resistive-RAM (RRAM) operational characteristics and dielectric structural properties is considered.
Bersuker, G., Kirsch, P. D., Geer, R., Gilmer, D. C., Padovani,A, Butcher, B., LARCHER, Luca   +6 more
core   +1 more source

Thermal stability of resistive switching effect in ZnO/BiFeO3 bilayer structure

, 2019
Superior thermal stability of resistive switching performance is essential for resistive random access memory (R-RAM) device with high reliability.
Yue Zheng, H. Y. Zhang, W. M. Xiong, Biao Wang, X. Y. Zhang   +4 more
core   +1 more source

Adaptive placement and migration policy for an STT-RAM-based hybrid cache

, 2014
Emerging Non-Volatile Memories (NVM) such as Spin-Torque Transfer RAM (STT-RAM) and Resistive RAM (RRAM) have been explored as potential alternatives for traditional SRAM-based Last-Level-Caches (LLCs) due to the benefits of higher density and lower ...
Wang, Zhe, Cong Xu, Daniel A. Jimenez, Xie, Yuan, Yuan Xie, Sun, Guangyu, Zhe Wang, Jimenez, Daniel A., Xu, Cong, Guangyu Sun   +9 more
core   +1 more source

Electrical characterization of HfO₂ based resistive RAM devices having different bottom electrode metallizations

, 2018
HfO 2 based resistive RAM devices as the important candidates of future embedded non-volatile memory technology were investigated using state of art physical and electrical characterization methods. Memory stacks used for measurements, named MARS, having
Tekin, Serdar B.
core  

Resistive Programmable Through Silicon Vias for Reconfigurable 3D Fabrics [PDF]

In this letter we report on the fabrication and characterization of titanium dioxide (TiO2)-based resistive RAM (ReRAM) co-integration with 380 ìm-height Cu Through Silicon Via (TSV) arrays for programmable 3D interconnects.
De Micheli, Giovanni, Temiz, Yuksel, Zervas, Michail, Sacchetto, Davide, Leblebici, Yusuf   +4 more
core   +1 more source

An enhanced behavioral model for resistive RAMs and its application

, 2020
Emerging electronic devices are promising to drive the performance of computer systems to new heights, against the notable saturation in traditional transistor-based architectures. Among them, resistive RAM -- or ReRAM -- has attracted a lot of attention
Radakovits, David
core  

Stochastic Model of the Resistive Switching Mechanism in Bipolar Resistive Random Access Memory: Monte Carlo Simulations”, [PDF]

, 2011
Memory is an indispensible important component of any modern integrated circuit. While MOSFET scaling has reached tremendous advances, semiconductor memory scaling is lagging behind.
V Sverdlov, A Makarov, S Selberherr
core  

All WSe₂ 1T1R resistive RAM cell for future monolithic 3D embedded memory integration. [PDF]

Nat Commun, 2019
Sivan M, Li Y, Veluri H, Zhao Y, Tang B, Wang X, Zamburg E, Leong JF, Niu JX, Chand U, Thean AV.   +10 more
europepmc   +1 more source

Exploring the impact of random telegraph noise-induced accuracy loss in Resistive RAM-based deep neural network [PDF]

For Resistive RAM (RRAM)-based deep neural network, Random telegraph noise (RTN) causes accuracy loss during inference. In this work, we systematically investigated the impact of RTN on the complex deep neural networks (DNNs) with different datasets.
Du, Y, Cai, Y, Ji, Z, Zhang, JF, Jing, L, Fang, H, Wang, R, Chen, H   +7 more
core   +1 more source