Results 71 to 80 of about 2,221 (294)

Giant Electrostriction in Halide Perovskites Revisited With Double‐Modulation Interferometry

Advanced Functional Materials, EarlyView.
A giant electrostrictive effect in lead halide perovskites had been reported previously. This work uses sensitive interferometry to measure the electromechanical response of various halide perovskite samples. The results reveal no intrinsic electrostrictive compression. Instead, the materials expand primarily under an applied electric field as a result
Philipp Ramming, Markus Griesbach, Ralf Moos, Lothar Kador, Anna Köhler   +4 more
wiley   +1 more source

A New High-Density and Ultrasmall-Cell-Size Contact RRAM (CR-RAM) With Fully CMOS-Logic-Compatible Technology and Circuits [PDF]

, 2014
[[abstract]]A valid resistive dielectric film with excellent state switching is successfully demonstrated in a contact resistive RAM (CR-RAM) structure fabricated by 90-nm CMOS logic technology.
Tseng, Yuan Heng;Chia-En Huang;Kuo, C.;Chih, Y.-D.;Ya-Chin King;Chrong Jung Lin
core   +1 more source

Strain Engineering of Magnetoresistance and Magnetic Anisotropy in CrSBr

Advanced Materials, EarlyView.
Biaxial compressive strain significantly enhances magnetoresistance and critical saturation fields in thin flakes of the 2D magnet CrSBr, along all three crystallographic axes. First‐principles calculations link these effects to strain‐induced increases in exchange interactions and magnetic anisotropy.
Eudomar Henríquez‐Guerra, Alberto M. Ruiz, Marta Galbiati, Álvaro Cortés‐Flores, Daniel Brown, Esteban Zamora‐Amo, Lisa Almonte, Andrei Shumilin, Juan Salvador‐Sánchez, Ana Pérez‐Rodríguez, Iñaki Orue, Andrés Cantarero, Andres Castellanos‐Gomez, Federico Mompeán, Mar Garcia‐Hernandez, Efrén Navarro‐Moratalla, Enrique Diez, Mario Amado, José J. Baldoví, M. Reyes Calvo   +19 more
wiley   +1 more source

Carry-free Addition in Resistive RAM Array: n-bit Addition in 22 Memory Cycles [PDF]

, 2021
The movement of data between processing and memory units, often referred to as the ‘von Neumann bottleneck’ is the main reason for the degraded performance of contemporary computing systems.
Fey, Dietmar, Reuben, John
core   +1 more source

Gapless Superconductivity From Extremely Dilute Magnetic Disorder in 2H‐NbSe2‐xSx

Advanced Materials, EarlyView.
We demonstrate that 2H‐NbSe2‐xSx hosts gapless superconductivity at unexpectedly low magnetic impurity concentrations. Combining STM, Bogoliubovde Gennes simulations, DFT, and quasiparticle interference, we comprehensively study the development of gapless behavior and show that SeS substitution reshapes the band structure, enhances nesting, and drives ...
Jose Antonio Moreno, Mercè Roig, Víctor Barrena, Edwin Herrera, Alberto M. Ruiz, Samuel Mañas‐Valero, Antón Fente, Anita Smeets, Jazmín Aragón, Yanina Fasano, Beilun Wu, Maria N. Gastiasoro, Eugenio Coronado, José J. Baldoví, Brian M. Andersen, Isabel Guillamón, Hermann Suderow   +16 more
wiley   +1 more source

Resistive RAM-Centric Computing: Design and Modeling Methodology

IEEE Transactions on Circuits and Systems I: Regular Papers, 2017
Memory-centric computing with on-chip non-volatile memories provides unique opportunities for native and local information processing in an energy-efficient manner. Design and modeling methodology based on resistive random access memory (RRAM) is presented in this paper.
Haitong Li, Tony F. Wu, Subhasish Mitra, H.-S. Philip Wong   +3 more
openaire   +1 more source

Rammed Earth stabilised with waste materials: a sustainable and resistant solution [PDF]

IOP Conference Series: Earth and Environmental Science, 2019
Abstract Earthen dwellings are part of the vernacular architecture and cultural heritage of many countries in the Mediterranean region, and a renovated interest towards these types of structures is now widespread in the same countries mainly due to sustainability reasons.
Arrigoni A., Simoni G., Dotelli G., Pelosato R., Caruso M.   +4 more
openaire   +2 more sources

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Ram resistance of a seasonal snowcover

MAUSAM, 1984
In this paper modified formula has been derived for working out Ram resistance of snowcover considering coefficient of restitution. It has an operational value in avalanche forecasting.
openaire   +2 more sources

Configurable Operational Amplifier Architectures Based on Oxide Resistive RAMs [PDF]

Journal of Circuits, Systems and Computers, 2019
This paper introduces memristor-based operational amplifiers (OpAmps) in which semiconductor resistors are suppressed and replaced by memristors. The ability of the memristive elements to hold several resistance states is exploited to design programmable closed-loop OpAmps. An inverting OpAmp, an integrator and a differentiator are studied.
Hassen Aziza, Christian Dufaza, Annie Pérez, Said Hamdioui   +3 more
openaire   +1 more source