Results 91 to 100 of about 2,221 (294)

Rediscovering Majority Logic in the Post-CMOS Era: A Perspective from In-Memory Computing

open access: yesJournal of Low Power Electronics and Applications, 2020
As we approach the end of Moore’s law, many alternative devices are being explored to satisfy the performance requirements of modern integrated circuits. At the same time, the movement of data between processing and memory units in contemporary computing
John Reuben
doaj   +1 more source

Transcription Factor Promiscuity Drives Regulatory Rewiring and Evolvability in Gene Networks in Bacteria

open access: yesAdvanced Science, EarlyView.
When a master transcription factor (TF) is lost, bacteria can rapidly rewire gene regulatory networks by co‐opting related regulators. Using experimental evolution in Pseudomonas fluorescens, we show that TF promiscuity (low‐level, non‐cognate binding) provides the raw material for rewiring. Successful co‐option follows a predictable hierarchy governed
Tiffany B. Taylor, Alan M. Rice
wiley   +1 more source

An On‐Demand Neuromorphic Vision System Enabled by a Multi‐Paradigm Neuromorphic Device and Hierarchical Reconfigurability Designed from Device to System Level

open access: yesAdvanced Science, EarlyView.
An on‐demand ultra‐reconfigurable intelligent vision system with hierarchical reconfigurability from device to system levels is demonstrated. Through co‐design of a multi‐paradigm device, reconfigurable circuits, and adaptive system architecture/algorithms, the system enables seamless switching among spiking, non‐spiking, neuromorphic imaging (NI), and
Biyi Jiang   +7 more
wiley   +1 more source

A symmetric 8T2R NVSRAM with autosave function

open access: yesElectronics Letters
This letter presented a symmetric 8T2R NVSRAM with autosave function. By efficiently multiplexing the node voltages, the control of the nonvolatile memristor and the isolation of the data node from the memristor are achieved, which ensures an ...
Bowen Su   +3 more
doaj   +1 more source

Tunable Dynamics via Dual‐Ion Modulation for Event‐based Data Processing Using a Highly Uniform and Self‐Rectifying Memristor Array

open access: yesAdvanced Science, EarlyView.
Tunable dynamics of an interface‐type memristor array enabled by dual‐ion modulation through Ag nanoclusters are demonstrated. A 32 × 32 one‐resistor (1R) array exhibits 100% yield with high temporal/spatial uniformity (<3%) and a rectification ratio of 105.
Yoonho Cho   +7 more
wiley   +1 more source

Spike-Timing Dependent Plasticity in Unipolar Silicon Oxide RRAM Devices

open access: yesFrontiers in Neuroscience, 2018
Resistance switching, or Resistive RAM (RRAM) devices show considerable potential for application in hardware spiking neural networks (neuro-inspired computing) by mimicking some of the behavior of biological synapses, and hence enabling non-von Neumann ...
Konstantin Zarudnyi   +5 more
doaj   +1 more source

Nano Carbon‐mesh with Excellent Bonding Performance via Hydro‐cage De‐shielding Strategy

open access: yesAdvanced Science, EarlyView.
A hydro‐cage de‐shielding strategy transforms cellulose‐based films into a dragonfly‐wing‐like nano carbon‐mesh (NCM) adhesive through instantaneous carbonization‐polymerization. The resulting NCM‐plywood achieves exceptional wet shear strength (1.24 MPa at 63°C), exceeding Class II plywood standards, and retains 0.73 MPa after boiling‐water cycles ...
Weijia Yang   +14 more
wiley   +1 more source

Lattice Distortion‐Driven Metal Exsolution in Perovskite Oxides

open access: yesAdvanced Science, EarlyView.
This study elucidates the mechanism of lattice distortion‐driven exsolution through a combination of computational simulations and experimental approaches. Lattice distortion facilitates the formation of oxygen vacancies and subsequent metal segregation, thereby enhancing the exsolution behavior.
Yo Han Kim   +5 more
wiley   +1 more source

Adaptive placement and migration policy for an STT-RAM-based hybrid cache [PDF]

open access: yes, 2014
Emerging Non-Volatile Memories (NVM) such as Spin-Torque Transfer RAM (STT-RAM) and Resistive RAM (RRAM) have been explored as potential alternatives for traditional SRAM-based Last-Level-Caches (LLCs) due to the benefits of higher density and lower ...
Wang, Zhe   +9 more
core   +1 more source

Design of Power- and Variability-Aware Nonvolatile RRAM Cell Using Memristor as a Memory Element

open access: yesIEEE Journal of the Electron Devices Society, 2019
A 3 CNFETs and 2 memristors-based half-select disturbance free 3T2R resistive RAM (RRAM) cell is proposed in this paper. While the two memristors act as the nonvolatile memory elements, CNFETs are employed as high-performance switches.
Soumitra Pal   +3 more
doaj   +1 more source

Home - About - Disclaimer - Privacy