Results 91 to 100 of about 244,153 (287)

Hardware‐Native Gaussian Sampling With Probabilistic Ising Machines for Modern Communication Paradigms

Advanced Science, EarlyView.
Probabilistic Ising machines are introduced as hardware‐native Gaussian samplers for edge communication workloads. Tunable variance and sampling density enable accurate distributions for Falcon‐class post‐quantum signatures and diffusion‐based semantic communication.
Davi Rodrigues, Andrea Grimaldi, Deborah Volpe, Youwei Bao, Shuhan Yang, Eleonora Grassucci, Giulio Siracusano, Massimo Chiappini, Mario Carpentieri, Hyunsoo Yang, Giovanni Finocchio   +10 more
wiley   +1 more source

Spike-Timing Dependent Plasticity in Unipolar Silicon Oxide RRAM Devices

Frontiers in Neuroscience, 2018
Resistance switching, or Resistive RAM (RRAM) devices show considerable potential for application in hardware spiking neural networks (neuro-inspired computing) by mimicking some of the behavior of biological synapses, and hence enabling non-von Neumann ...
Konstantin Zarudnyi, Adnan Mehonic, Luca Montesi, Mark Buckwell, Stephen Hudziak, Anthony J. Kenyon   +5 more
doaj   +1 more source

A New High-Density and Ultrasmall-Cell-Size Contact RRAM (CR-RAM) With Fully CMOS-Logic-Compatible Technology and Circuits

, 2014
[[abstract]]A valid resistive dielectric film with excellent state switching is successfully demonstrated in a contact resistive RAM (CR-RAM) structure fabricated by 90-nm CMOS logic technology.
Tseng, Yuan Heng;Chia-En Huang;Kuo, C.;Chih, Y.-D.;Ya-Chin King;Chrong Jung Lin
core   +1 more source

Magnetoelectric Multiferroics for the Next‐Generation Ultralow‐Power Electronics

Advanced Science, EarlyView.
Magnetoelectric coupling provides a unifying route from electric‐field control of magnetic order to non‐volatile MeRAM, MESO logic, and emerging antiferromagnetic and magnonic devices. By connecting switching physics with device benchmarks, material platforms, and integration strategies, distinctive technological opportunities are identified alongside ...
Yang Liu, Yunlong Sun, Hao Luo, Duoduo Zhao, Yuhan Zeng, Xuzihan Zhang, Zhewei Liu, Hao Peng, Zhijing Zhang, Jack Yang, Ji Zhang, Danyang Wang, Junjie Shi, Sean Li   +13 more
wiley   +1 more source

Design of Power- and Variability-Aware Nonvolatile RRAM Cell Using Memristor as a Memory Element

IEEE Journal of the Electron Devices Society, 2019
A 3 CNFETs and 2 memristors-based half-select disturbance free 3T2R resistive RAM (RRAM) cell is proposed in this paper. While the two memristors act as the nonvolatile memory elements, CNFETs are employed as high-performance switches.
Soumitra Pal, Subhankar Bose, Wing-Hung Ki, Aminul Islam   +3 more
doaj   +1 more source

Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration

Advanced Electronic Materials, EarlyView.
Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song, Chenxi Yu, Shangze Li, Dijiang Sun, Jiajia Zhang, Haotong Zhu, Xiaomin Xiao, Xionghao Qin, Xiaoyan Liu, Xing Zhang, Jinfeng Kang   +10 more
wiley   +1 more source

Investigating non-volatile memory architectures for neuromorphic systems with CMOS spike-timed synaptic plasticity

Discover Computing
Learning is crucial for the brain’s ability to adapt to changing conditions. We suggest a collection of novel neuromorphic construction circuits, adjustable synapse circuits, and CMOS Spike Based Driven Synaptic Plasticity (CSBDSP) erudition algorithm ...
Joshika Sharma, Shyam Akashe, Govind Murari Upadhyay   +2 more
doaj   +1 more source

Ram Kumar narrates the Jackal and the Crow

, 2019
Ram describes each picture of the Jackal and the Crow, a picture-based stimulus task. He tells the whole story, and then tells the story from the fox’s perspective.
Martinez, Philippe Antoine
core  

Model‐Based Time‐Modulated Write Algorithm for 1R Analog Memristive Crossbar Arrays

Advanced Electronic Materials, EarlyView.
A novel model‐based time‐modulated write algorithm efficiently programs analog 1R memristive crossbar arrays by varying pulse duration at a fixed voltage. By leveraging a physics‐based compact model and a dynamic gain mechanism, this approach overcomes device nonlinearities and parasitic effects.
Richard Schroedter, Ahmet Samil Demirkol, Ioannis Messaris, Christian Bruchatz, Eter Mgeladze, Stefan Slesazeck, Thomas Mikolajick, Ronald Tetzlaff   +7 more
wiley   +1 more source

Modeling of Self-Aligned Selector Based on Ultra-Thin Metal Oxide for Resistive Random-Access Memory (RRAM) Crossbar Arrays

Nanomaterials
Resistive random-access memory (RRAM) is a crucial element for next-generation large-scale memory arrays, analogue neuromorphic computing and energy-efficient System-on-Chip applications.
Mikhail Fedotov, Viktor Korotitsky, Sergei Koveshnikov   +2 more
doaj   +1 more source