Results 101 to 110 of about 244,153 (287)
Process variation-aware test for resistive bridges [PDF]
, 2009 This paper analyses the behaviour of resistive bridging faults under process variation and shows that process variation has a detrimental impact on test quality in the form of test escapes.
Ingelsson, Urban +6 more
core +1 more source
Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference
Advanced Electronic Materials, EarlyView.This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho +6 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar +9 more
wiley +1 more source
Silicon Nitride Resistive Memories
Advanced Electronic Materials, EarlyView.Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis +7 more
wiley +1 more source
, 2011 Light-weight radar absorbing material (RAM) based on resistive frequency selective surfaces (FSS) was designed and prepared. The principle of the resonances of the RAM was analyzed by calculating the impedance of the FSS and the grounded substrate ...
Liang Kui Sun +3 more
core +1 more source
Resistive Programmable Through Silicon Vias for Reconfigurable 3D Fabrics [PDF]
, 2012 In this letter we report on the fabrication and characterization of titanium dioxide (TiO2)-based resistive RAM (ReRAM) co-integration with 380 ìm-height Cu Through Silicon Via (TSV) arrays for programmable 3D interconnects.
De Micheli, Giovanni +9 more
core +2 more sources
Nonlinear Dynamics and Invariants of Motion in ReRAM Cells
Advanced Electronic Materials, EarlyView.A second‐order cell, hosting one capacitor and two back‐to‐back ReRAMs, admits Invariants of Motion: its states lie on one‐dimensional manifolds at all times. The cell shows quiescent monostability or bistability, depending on the manifold index. At equilibrium, the capacitor voltage vanishes.
Mauro Di Marco +5 more
wiley +1 more source
Adaptive placement and migration policy for an STT-RAM-based hybrid cache
, 2014 Emerging Non-Volatile Memories (NVM) such as Spin-Torque Transfer RAM (STT-RAM) and Resistive RAM (RRAM) have been explored as potential alternatives for traditional SRAM-based Last-Level-Caches (LLCs) due to the benefits of higher density and lower ...
Wang, Zhe +9 more
core +1 more source
Advanced Electronic Materials, EarlyView.Ru–Pt alloying suppresses filament overgrowth and an AlOx switching layer enhances reliable switching, hopping transport enables conductance tuning via hopping distance modulation, Ru7Pt3/AlOx/Pt device yields 16 low‐noise conductance states, a 2–3‐fold improvement over prior Ru‐based CBRAM, and CSNN inference on FMNIST reaches 81% accuracy with 103 ...
Sangmin Lee +10 more
wiley +1 more source
An RRAM-based implementation of a template matching circuit for low-power analogue classification
Frontiers in ElectronicsRecent advances in machine learning and neuro-inspired systems enabled the increased interest in efficient pattern recognition at the edge. A wide variety of applications, such as near-sensor classification, require fast and low-power approaches for ...
Patrick Foster +4 more
doaj +1 more source