Results 101 to 110 of about 227,405 (293)

Force‐Electric Nanotentacles of Tantalum Implant Accelerate Cellular Energy Metabolism/Crosstalk for Immunomodulation‐Vascularized Bone Integration

Advanced Science, EarlyView.
A biomimetic force‐electric nanotentacle‐enabled tantalum (Ta) implant with surface‐nanostructured LiTaO3 (n‐LiTaO3) was first developed via laser nanofabrication combined with Li+‐induced in situ reaction, enabling the transduction of ultrasound into bioelectrical cues.
Taixing Zhang, Ke Ma, Kangqing Zuo, Pandong Lin, Tailong Zhang, Rongliang Ding, Linbo Zhang, Aonan Li, Yinchuan Wang, Yanling Huang, Jichao Feng, Guiyong Xiao, Yupeng Lu, Bing Han, Zhiqiang Wang, Ningbo Li   +15 more
wiley   +1 more source

EVOLUTION OF NON-VOLATILE HIGH-SPEED RAM TECHNOLOGY BASED ON MAGNETO-RESISTIVE STRUCTURE

, 2022
У тезах розглянуто еволюція технології енерго-незалежної швидкісної оперативної пам'яті на основі магнето-резистивної структури. Визначені переваги та недоліки, та розкрито поняття принципу роботи MRAM.
Дяченко, М. В., Юрченко, О. В., Бондаренко, Д. В.   +2 more
core  

A Dual‐Programmable 2M NOR Flash Architecture for Energy‐Efficient In‐Memory Computing

Advanced Science, EarlyView.
In conventional NOR Flash, the access transistor occupies area but stores no information. Here, it is repurposed as a programmable second memory device that plays two functional roles: an analog memory element that lowers the minimum read current from 72.7 nA to 4.22 pA, and a current‐path gating element enabling true‐off pruning and current‐range ...
Suhan Kim, Donghyun Ryu, Hyoseob Kim, Sangwoo Jung, Min‐Hwi Kim   +4 more
wiley   +1 more source

Analysis of Resistive Bridge Defect Delay Behavior in the Presence of Process Variation

Recent research has shown that tests generated without taking process variation into account may lead to loss of test quality. Using transition delay test, this paper analyzes the behavior of resistive bridge defect under the influence of process ...
Reddy, Sudhakar, Khursheed, Saqib, Zhong, Shida, Chakrabarty, Krishnendu, Al-Hashimi, Bashir   +4 more
core   +1 more source

Continuous Molecular Monitoring Using Electrochemical Aptamer‐Based Sensors: Remaining Challenges for Long‐Term In Vivo Deployment

Advanced Science, EarlyView.
Continuous molecular monitoring using electrochemical aptamer‐based sensors enables real‐time tracking of dynamic biomarkers with transformative potential for precision medicine. Achieving clinically relevant month‐long stability remains a central challenge due to multiple degradation pathways.
Shibo Liu, Xiangling Li, Wei Ouyang
wiley   +1 more source

Impact of Line Resistance Combined with Device Variability on Resistive RAM Memories

Advances in Science, Technology and Engineering Systems Journal, 2018
In this paper, the performance and reliability of oxide-based Resistive RAM (ReRAM) memory is investigated in a 28nm FDSOI technology versus interconnects resistivity combined with device variability. Indeed, common problems with ReRAM are related to high variability in operating conditions and low yield. At a cell level ReRAMs suffer from variability.
Hassan Aziza, Pierre Canet, Jeremy Postel-Pellerin   +2 more
openaire   +1 more source

Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration

Advanced Electronic Materials, EarlyView.
Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song, Chenxi Yu, Shangze Li, Dijiang Sun, Jiajia Zhang, Haotong Zhu, Xiaomin Xiao, Xionghao Qin, Xiaoyan Liu, Xing Zhang, Jinfeng Kang   +10 more
wiley   +1 more source

Memristor-based Random Access Memory: The delayed switching effect could revolutionize memory design [PDF]

, 2015
Memristor’s on/off resistance can naturally store binary bits for non-volatile memories. In this work, we found that memristor’s another peculiar feature that the switching takes place with a time delay (we name it “the delayed switching”) can be used to
Wang, Frank Z., Leon O. Chua, Wang, Frank, Helian, Na, Na Helian, Chua, Leon O., Frank Zhigang Wang   +6 more
core   +1 more source

Model‐Based Time‐Modulated Write Algorithm for 1R Analog Memristive Crossbar Arrays

Advanced Electronic Materials, EarlyView.
A novel model‐based time‐modulated write algorithm efficiently programs analog 1R memristive crossbar arrays by varying pulse duration at a fixed voltage. By leveraging a physics‐based compact model and a dynamic gain mechanism, this approach overcomes device nonlinearities and parasitic effects.
Richard Schroedter, Ahmet Samil Demirkol, Ioannis Messaris, Christian Bruchatz, Eter Mgeladze, Stefan Slesazeck, Thomas Mikolajick, Ronald Tetzlaff   +7 more
wiley   +1 more source

An RRAM-based implementation of a template matching circuit for low-power analogue classification

Frontiers in Electronics
Recent advances in machine learning and neuro-inspired systems enabled the increased interest in efficient pattern recognition at the edge. A wide variety of applications, such as near-sensor classification, require fast and low-power approaches for ...
Patrick Foster, Georgios Papandroulidakis, Alex Serb, Spyros Stathopoulos, Themis Prodromakis   +4 more
doaj   +1 more source