Results 111 to 120 of about 2,057 (152)
Some of the next articles are maybe not open access.
Research on Memristor Oriented to Resistive RAM
Applied Mechanics and Materials, 2013With the process of high integration, low power consumption, small size in the semiconductor industry, resistive RAM has drawn increasing attention. The discovery of the memristor brings much more to this study. These researches focus on resistive switching characteristics of different materials and analysis of resistive switching mechanisms.
Da Huang, Yu Hua Tang
exaly +2 more sources
IEEE Nanotechnology Magazine, 2020 International audienceA novel True Random Number Generator circuit fabricated in a 130nm HfO2-based resistive RAM process is presented. The generation of the random bit stream is based on a specific programming sequence applied to a dedicated memory ...
Hassen Aziza +2 more
exaly +2 more sources
Incorporating Variability of Resistive RAM in Circuit Simulations Using the Stanford–PKU Model
IEEE Nanotechnology Magazine, 2020 Intrinsic variability observed in resistive-switching devices (cycle-to-cycle and device-to-device) is widely recognised as a major hurdle for widespread adoption of Resistive RAM technology.
John Reuben +2 more
exaly +3 more sources
Multilevel operation in oxide based resistive RAM with SET voltage modulation
, 2016 International audienceIn this paper multilevel storage characteristic in Oxide-based Resistive RAM (OxRRAM) is demonstrated by modulating the amplitude of the cell programming voltages. Four resistance levels are clearly obtained.
Hassen Aziza, M Moreau
exaly +2 more sources
Resistive RAM With Multiple Bits Per Cell: Array-Level Demonstration of 3 Bits Per Cell
IEEE Transactions on Electron Devices, 2019 International audienceWe demonstrate, for the first time, resistive RAM (RRAM) arrays where each cell can store 3 bits. Such full array-level demonstration is possible through special techniques (e.g., that exploit RRAM-specific characteristics of ...
Binh Q Le +2 more
exaly +2 more sources
STATE: A Test Structure for Rapid and Reliable Prediction of Resistive RAM Endurance
IEEE Transactions on Device and Materials Reliability, 2022 International audienceCharacterizing and quantifying the endurance of Resistive RAM devices is critical to assess their reliability for integration in electronic systems.
Hassen Aziza +2 more
exaly +2 more sources
IEEE Transactions on Electron Devices, 2019 International audienceLimited endurance of resistive RAM (RRAM) is a major challenge for future computing systems. Using thorough endurance tests that incorporate fine-grained read operations at the array level, we quantify for the first time temporary ...
Alessandro Grossi +2 more
exaly +2 more sources
Neuromorphic Computing based on Resistive RAM
Proceedings of the Great Lakes Symposium on VLSI 2017, 2017Resistive random access memory (RRAM) has gained significant attentions because of its excellent characteristics which are suitable for next-generation non-volatile memory applications. It is also very attractive to build neuromorphic computing chip based on RRAM cells due to non-volatile and analog properties.
Zixuan Chen +5 more
openaire +1 more source
Multistate Register Based on Resistive RAM
IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2015In recent years, memristive technologies, such as resistive random access memory (RRAM), have emerged. These technologies are usually considered as alternates for static RAM, dynamic RAM, and Flash. In this paper, a novel digital circuit, the multistate register, is proposed.
Ravi Patel 0001 +3 more
openaire +1 more source
PUF designed with Resistive RAM and Ternary States
Proceedings of the 11th Annual Cyber and Information Security Research Conference, 2016The designs of Physically Unclonable Functions (PUFs) described in this paper are based on Resistive RAMs incorporating ternary states with the objective to reduce false negative authentications (FNA) with low Challenge-Response-Pair (CRP) error rates.
Bertrand Cambou, Marius Orlowski
openaire +1 more source