Results 111 to 120 of about 2,221 (294)

Regulating Droplet Dynamics via Wormlike Micelle Networks: From Splash Suppression to Precise Confined Spreading

Advanced Science, EarlyView.
As displayed in Graphical Abstract image.tif, a molecular‐design strategy precisely tailors high‐speed droplet dynamics through programmed surfactant co‐assembly. The structural transition into an entangled wormlike micelle network completely suppresses stochastic splashing on fibrous substrates.
Shuling Liu, Beibei Xie, Xingyue Lou, Yu Deng, Lei Wang, Jiawei Li, Dongming Qi   +6 more
wiley   +1 more source

Porous Ultralow‐κ sp2‐Bonded Boron Nitride Thin Films as Copper Diffusion Barriers

Advanced Science, EarlyView.
Porous sp2‐bonded boron nitride (p‐BN) thin films with an ultralow dielectric constant (κ = 1.77) are directly grown on Si substrates via RF magnetron sputtering. The films feature uniform nanopores (1.85 nm), high mechanical stability, hydrophobicity, and excellent Cu diffusion barrier performance even at 3 nm thickness, offering a promising solution ...
Caiyun Liu, Ze Long, Zhongyuan Han, Yingying Guo, Yuning Ding, Tianhao Guo, Yuting Tang, Runzhi An, Haoran Ma, Jishan Liu, Hongwei Liang, Hong Yin   +11 more
wiley   +1 more source

Investigation of DPA Resistance of Block RAMs in Cryptographic Implementations on FPGAs

2010 International Conference on Reconfigurable Computing and FPGAs, 2010
Security at low cost is an important factor for cryptographic hardware implementations. Unfortunately, the security of cryptographic implementations is threatened by Side Channel Analysis (SCA). SCA attempts to discover the secret key of a device by exploiting implementation characteristics and bypassing the algorithm's mathematical security ...
Shaunak Shah, Rajesh Velegalati, Jens-Peter Kaps, David Hwang   +3 more
openaire   +2 more sources

RRAM Variability Harvesting for CIM‐Integrated TRNG

Advanced Electronic Materials, EarlyView.
This work demonstrates a compute‐in‐memory‐compatible true random number generator that harvests intrinsic cycle‐to‐cycle variability from a 1T1R RRAM array. Parallel entropy extraction enables high‐throughput bit generation without dedicated circuits. This approach achieves NIST‐compliant randomness and low per‐bit energy, offering a scalable hardware
Ankit Bende, Gokulnath Rajendran, Regina Dittmann, Anupam Chattopadhyay, Vikas Rana   +4 more
wiley   +1 more source

Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration

Advanced Electronic Materials, EarlyView.
Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song, Chenxi Yu, Shangze Li, Dijiang Sun, Jiajia Zhang, Haotong Zhu, Xiaomin Xiao, Xionghao Qin, Xiaoyan Liu, Xing Zhang, Jinfeng Kang   +10 more
wiley   +1 more source

Recent advances in inorganic oxides-based resistive random-access memory devices [PDF]

, 2022
Memory has always been a building block element for information technology. Emerging technologies such as artificial intelligence, big data, the internet of things, etc., require a novel kind of memory technology that can be energy efficient and have an ...
Mondal, Prakash Chandra, Gupta, Ritu, Pritam, Anurag   +2 more
core  

An RRAM-based implementation of a template matching circuit for low-power analogue classification

Frontiers in Electronics
Recent advances in machine learning and neuro-inspired systems enabled the increased interest in efficient pattern recognition at the edge. A wide variety of applications, such as near-sensor classification, require fast and low-power approaches for ...
Patrick Foster, Georgios Papandroulidakis, Alex Serb, Spyros Stathopoulos, Themis Prodromakis   +4 more
doaj   +1 more source

Model‐Based Time‐Modulated Write Algorithm for 1R Analog Memristive Crossbar Arrays

Advanced Electronic Materials, EarlyView.
A novel model‐based time‐modulated write algorithm efficiently programs analog 1R memristive crossbar arrays by varying pulse duration at a fixed voltage. By leveraging a physics‐based compact model and a dynamic gain mechanism, this approach overcomes device nonlinearities and parasitic effects.
Richard Schroedter, Ahmet Samil Demirkol, Ioannis Messaris, Christian Bruchatz, Eter Mgeladze, Stefan Slesazeck, Thomas Mikolajick, Ronald Tetzlaff   +7 more
wiley   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

Technology and Circuit Optimization of Resistive RAM for Low-Power, Reproducible Operation [PDF]

, 2014
or Resistive RAM (RRAM), reproducibility in large arrays requires control of capacitive surge currents during programming. In this work, we present results from a 256kb RRAM chip which demonstrate how device optimization in conjunction with innovative ...
D. Sekar, B. Bateman, U. Raghuram, S. Bowyer, *Y. Bai, M. Calarrudo, P. Swab, J. Wu, S. Nguyen, N. Mishra, R. Meyer, M. Kellam, B. Haukness, C. Chevallier, * H. Wu, * H. Qian, ** F. Kreupl and G. Bronner
core