Results 121 to 130 of about 2,221 (294)

SPIKA: an energy-efficient time-domain hybrid CMOS-RRAM compute-in-memory macro

Frontiers in Electronics
The increasing significance of machine learning (ML) has led to the development of circuit architectures suited to handling its multiply-accumulate-heavy computational load such as Compute-In-Memory (CIM). A big class of such architectures uses resistive
Khaled Humood, Yihan Pan, Grahame Reynolds, Mohammed Mughal, Shiwei Wang, Alexander Serb, Themis Prodromakis   +6 more
doaj   +1 more source

People Counting and Positioning Using Low‐Resolution Infrared Images for FeFET‐Based In‐Memory Computing

Advanced Electronic Materials, EarlyView.
In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar, Li Zhang, Alexander Rehmer, Marc Lupp, Subhashree Baskaran, Osama Abdelaal, Franz Müller, Nandakishor Yadav, Bing Li, Thomas Kämpfe   +9 more
wiley   +1 more source

DenRAM: neuromorphic dendritic architecture with RRAM for efficient temporal processing with delays

Nature Communications
Neuroscience findings emphasize the role of dendritic branching in neocortical pyramidal neurons for non-linear computations and signal processing. Dendritic branches facilitate temporal feature detection via synaptic delays that enable coincidence ...
Simone D’Agostino, Filippo Moro, Tristan Torchet, Yiğit Demirağ, Laurent Grenouillet, Niccolò Castellani, Giacomo Indiveri, Elisa Vianello, Melika Payvand   +8 more
doaj   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Logic Functionality and Circuit Design of In2Se3‐Based Split‐Gate Ferroelectric Field‐Effect Transistor for Zero‐Trust Applications

Advanced Electronic Materials, EarlyView.
ABSTRACT Van der Waals ferroelectric materials are emerging as key building blocks for future logic devices and integrated circuits. Among them, α‐In2Se3 offers a unique combination of robust room temperature ferroelectricity and semiconducting behavior.
Ankita Ram, Cédric Marchand, Shehr Bano Masood, Aymen Mahmoudi, Takashi Taniguchi, Kenji Watanabe, Bernard Doudin, Abdelkarim Ouerghi, Ian O'Connor, Alexei Gruverman, Jean‐François Dayen   +10 more
wiley   +1 more source

Environmental Effects on RRAM Cells Based on 2D Halide Perovskite Materials

Advanced Electronic Materials, EarlyView.
RRAM offers high speed, scalability, and low power, positioning it as a next‐generation non‐volatile memory. Two‐dimensional halide perovskites show promise due to tunable optoelectronic properties and flexible processing but suffer from environmental sensitivity. This review examines degradation from humidity, temperature, light, and strain, discusses
Mojtaba Joodaki, Babitha Arun, Hartmut Hillmer, Chih‐Chieh Hsu   +3 more
wiley   +1 more source

Assessing Mesoscale Heterogeneities in Hard Carbon Electrodes Through Deep Learning‐Assisted FIB‐SEM Characterization, Manufacturing and Electrochemical Modeling

Advanced Energy Materials, EarlyView.
A combination of discrete and finite element method models for the current collector deformation and electrochemical performance analysis, respectively. The models are calibrated and validated with electrochemical and imaging data of hard carbon electrodes. These electrodes were manufactured with different parameters (slurry solid contents of 35 and 40
Soorya Saravanan, Imelda Cardenas‐Sierra, Pei Sun, Hari Raj, Daniele Duranti, Mahnoor Nafees, Edoardo Rossi, Marco Sebastiani, Paul Vigneaux, Martin Petit, Maxime Moreaud, Francisco Fernandez, Alejandro A. Franco   +12 more
wiley   +1 more source

Resistive Programmable Through Silicon Vias for Reconfigurable 3D Fabrics [PDF]

In this letter we report on the fabrication and characterization of titanium dioxide (TiO2)-based resistive RAM (ReRAM) co-integration with 380 ìm-height Cu Through Silicon Via (TSV) arrays for programmable 3D interconnects.
De Micheli, Giovanni, Temiz, Yuksel, Zervas, Michail, Sacchetto, Davide, Leblebici, Yusuf   +4 more
core   +1 more source

Processing‐Centric Innovative Strategies for Protonic Ceramic Electrochemical Cells

Advanced Energy Materials, EarlyView.
This review reveals how processing‐centric fabrication strategies govern architecture, microstructure, and interfaces in protonic ceramic electrochemical cells (PCECs), establishing a framework that translates materials innovation into scalable PCEC technologies.
Dongyeon Kim, Seeun Oh, Hyeonggeun Kim, Hyeongmin Yu, Chuancheng Duan, Kang Taek Lee   +5 more
wiley   +1 more source

Efficient Majority Logic Parallel-Prefix Adder Design

IEEE Access
Emerging beyond CMOS technologies such as quantum-dot cellular automata (QCA), resistive RAM crossbars, spin-torque devices, and single-electron transistors implement only the three-input majority gate (MG) and the inverter as primitive operations ...
Constantinos Efstathiou, Ioannis Kouretas, Paris Kitsos, George Theodoridis   +3 more
doaj   +1 more source