Results 81 to 90 of about 244,153 (287)
Rediscovering Majority Logic in the Post-CMOS Era: A Perspective from In-Memory Computing
As we approach the end of Moore’s law, many alternative devices are being explored to satisfy the performance requirements of modern integrated circuits. At the same time, the movement of data between processing and memory units in contemporary computing
John Reuben
doaj +1 more source
Ram Kumar's hopes for his children
Ram Kumar discusses his hopes for his children and the power of education. The recording was made at Chhitkul's Senior Secondary School, located further down the village, on the river bank, towards the path leading to the military ...
Martinez, Philippe Antoine
core
Dielectric morphology and RRAM resistive switching characteristics
The connection between the bi-polar hafnia-based resistive-RAM (RRAM) operational characteristics and dielectric structural properties is considered.
Bersuker, G. +6 more
core +1 more source
Neuronal activation leads to astrocytic transient volume changes, activating transient receptor potential ankyrin 1 (TRPA1) channels, leading to Ca2+ influx. Activation of TRPA1 causes the release of D‐serine through BEST1. Finally, the augmented extracellular levels of D‐serine boost neuronal activity by binding GluN1‐containing NMDARs, leading to CBV
Kayoung Han +11 more
wiley +1 more source
Ram Kumar's childhood in Chhitkul village
Ram Kumar describes his childhood in Chhitkul village. The recording was made at the Government Senior Secondary School in Chhitkul village, where Kumar is a teacher.
Martinez, Philippe Antoine
core
A developmentally guided protocol reproducibly specifies EN1‐positive ventral midbrain dopaminergic (vmDA) progenitors from human pluripotent stem cells and yields functional vmDA neurons. Optogenetic induction of α‐synuclein aggregation elicits selective degeneration of TH‐positive neurons in 2D cultures and 3D neurospheroids, while transplanted ...
Heechang Moon +12 more
wiley +1 more source
HfO2 based resistive RAM devices as the important candidates of future embedded non-volatile memory technology were investigated using state of art physical and electrical characterization methods.
Tekin, S. B. +3 more
core +1 more source
Re‐Thinking Electronic Circuit Design Through Emerging Reconfigurable Field Effect Transistors
Graphical illustration of reconfigurable field effect transistor (RFET) operation modes, including n‐type, p‐type, and ambipolar transport, as well as their areas of application discussed in this review: digital circuit design, analog circuit design, post‐Shannon computing, and sensing. ABSTRACT Reconfigurable field‐effect transistors, short RFETs, are
Jens Trommer +19 more
wiley +1 more source
Three-dimensional perovskite nanowire array-based ultrafast resistive RAM with ultralong data retention. [PDF]
Zhang Y +11 more
europepmc +1 more source
Resistive-Pulse Sensing Inside Single Living Cells
Resistive-pulse sensing is a technique widely used to detect single nanoscopic entities such as nanoparticles and large molecules that can block the ion current flow through a nanopore or a nanopipette. Although the species of interest, e.g., antibodies,
Keke Hu (1414000) +5 more
core +1 more source

