Bipolar Switching Properties and Reaction Decay Effect of BST Ferroelectric Thin Films for Applications in Resistance Random Access Memory Devices. [PDF]
Wang YC +6 more
europepmc +1 more source
Oxygen Ion Concentration Distribution Effect on Bipolar Switching Properties of Neodymium Oxide Film's Resistance and Random Access Memory Devices. [PDF]
Chen KH, Kao MC, Chen HC, Wang YC.
europepmc +1 more source
Investigation of dual memory behavior in RRAM: coexistence of resistive and capacitive switching phenomena. [PDF]
Kim H, Kim S, Cho JY, Lee SH, Kim MH.
europepmc +1 more source
Gallium Oxide Memristors: A Review of Resistive Switching Devices and Emerging Applications. [PDF]
Moore A, Hou Y, Li L.
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All HfO<sub><i>x</i></sub>-Resistive Switches with the Conducting Oxygen Vacancy Exchange Layer and Self-Limited Oxide Layer. [PDF]
Schreyer P +14 more
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A Reconfigurable Memristor-Based Computing-in-Memory Circuit for Content-Addressable Memory in Sensor Systems. [PDF]
Hu H +12 more
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Compute-in-memory implementation of state space models for event sequence processing. [PDF]
Zhang X +6 more
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Density Functional Theory Insights into Conduction Mechanisms in Perovskite-Type RCoO3 Nanofibers for Future Resistive Random-Access Memory Applications. [PDF]
Hu Q +5 more
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Perovskite Quantum Dot-Based Memory Technologies: Insights from Emerging Trends. [PDF]
Ullah F, Fredj Z, Sawan M.
europepmc +1 more source
11-bit two-dimensional floating-gate memories. [PDF]
Wang Y +11 more
europepmc +1 more source

