Results 141 to 150 of about 4,641 (217)

Compute-in-memory implementation of state space models for event sequence processing. [PDF]

Nat Commun
Zhang X, Hu M, Lu S, Kim S, Lee EY, Liu Y, Lu WD.   +6 more
europepmc   +1 more source

Perovskite Quantum Dot-Based Memory Technologies: Insights from Emerging Trends. [PDF]

Nanomaterials (Basel)
Ullah F, Fredj Z, Sawan M.
europepmc   +1 more source

11-bit two-dimensional floating-gate memories. [PDF]

Nat Commun
Wang Y, Cai Y, Wang F, Yan T, Li S, Cao M, Hong R, Zhai B, Xu K, Zhan X, He J, Wang Z.   +11 more
europepmc   +1 more source

Density Functional Theory Insights into Conduction Mechanisms in Perovskite-Type RCoO₃ Nanofibers for Future Resistive Random-Access Memory Applications. [PDF]

Molecules
Hu Q, Luo H, Song C, Wang Y, Yue B, Liu J.   +5 more
europepmc   +1 more source

Interface-Induced Synaptic Performance in CeO₂/La_0.8Ba_0.2MnO₃ Oxygen Reservoir Junction. [PDF]

ACS Appl Mater Interfaces
Rathod KN, Datt G, Aslibeiki B, Johansson T, Barucca G, Peddis D, Kamalakar MV, Sarkar T.   +7 more
europepmc   +1 more source

Memristor-Based Artificial Neural Networks for Hardware Neuromorphic Computing. [PDF]

Research (Wash D C)
Jin B, Wang Z, Wang T, Meng J.
europepmc   +1 more source

In situ observation of oxygen ion dynamics in topological phase change memristors through self-assembled interface design. [PDF]

Sci Adv
Li K, Zhang J, Chen Y, Pan J, Zheng Y, Xu S, Zhao R, Li M, Qi R, Huang R, Yan Z, Yu P, Liu JM, MacManus-Driscoll JL, Yang H, Li W.   +15 more
europepmc   +1 more source

Reset-Voltage Controlled Resistance-State and Applications of Forming-Free Fe-Doped SrTiO₃ Thin-Film Memristor. [PDF]

Materials (Basel)
Lee KJ, Wu CH, Lee CJ, Chou DW, Wang NF, Wang YH.   +5 more
europepmc   +1 more source

Investigating the effect of electrical and thermal transport properties on oxide-based memristors performance and reliability. [PDF]

Sci Rep
Gooran-Shoorakchaly A, Sharif SS, Banad YM.   +2 more
europepmc   +1 more source

Doping-induced performance optimization in monolayer WS₂ memristor: reduced variability and contact resistance. [PDF]

RSC Adv
Tanisha TT, Hassan O, Alam MK.
europepmc   +1 more source