Results 151 to 160 of about 4,641 (217)

Coexistence of WORM and RRAM Resistive Switching in Coumarin Derivatives: A Comprehensive Performance Analysis. [PDF]

ACS Omega
Deb R, Banik H, De UC, Bhattacharjee D, Alibrahim KA, Alodhayb AN, Hussain SA.   +6 more
europepmc   +1 more source

Achieving high precision in analog in-memory computing systems. [PDF]

Npj Unconv Comput
Mannocci P, Larelli G, Bonomi M, Ielmini D.   +3 more
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Study of the Characteristics of Ba_0.6Sr_0.4Ti_1-xMn_xO₃-Film Resistance Random Access Memory Devices. [PDF]

Micromachines (Basel)
Chen KH, Cheng CM, Kao MC, Kao YH, Lin SF.   +4 more
europepmc   +1 more source

Modeling of Conduction Mechanism in Filament-free Multi-layer Bulk RRAM. [PDF]

IEEE Trans Electron Devices
Zhou Y, Kumar A, Park J, Zhang Y, Zhou Y, Kim S, Cubukcu E, Kuzum D.   +7 more
europepmc   +1 more source

Progress of emerging non-volatile memory technologies in industry. [PDF]

MRS Commun
Hellenbrand M, Teck I, MacManus-Driscoll JL.   +2 more
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A keyword-based approach to analyzing scientific research trends: ReRAM present and future. [PDF]

Sci Rep
Kim H, Kim SH, Kim J, Kim EH, Gu JH, Lee D.   +5 more
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An overview of critical applications of resistive random access memory. [PDF]

Nanoscale Adv
Zahoor F, Nisar A, Bature UI, Abbas H, Bashir F, Chattopadhyay A, Kaushik BK, Alzahrani A, Hussin FA.   +8 more
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An innovative semiconducting Ni(II)-metallogel based robust random access memory (RRAM) device for advanced flexible electronics applications. [PDF]

Sci Rep
Roy A, Dhibar S, Kumar S, Some S, Garg P, Ruidas P, Bhattacharjee S, Bera A, Saha B, Ray SJ.   +9 more
europepmc   +1 more source

Enhancing Stability and Performance of Conductive Bridge Random Access Memory: Use of a Copper-Doped ZnO Nanorod-Embedded Switching Layer. [PDF]

ACS Appl Mater Interfaces
Liu PT, Chiu YC, Hsu CC, Gan KJ, Ruan DB, Su SJ, Chang SW.   +6 more
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Switching in polymeric resistance random-access memories (RRAMS)

Organic Electronics, 2008
Resistive switching in aluminum-polymer-based diodes has been investigated using small signal impedance measurements. It is shown that switching is a two-step process. In the first step, the device remains highly resistive but the low frequency capacitance increases by orders of magnitude. In the second step, resistive switching takes place.
Gomes, Henrique L., Benvenho, A. R. V., De Leeuw, Dago M., Cölle, M., Stallinga, Peter, Verbakel, F., Taylor, D. M.   +6 more
openaire   +3 more sources