Results 131 to 140 of about 13,298 (199)

Impact of Reset Pulse Width on Gradual Conductance Programming in Al₂O₃/TiO_x-Based RRAM. [PDF]

Micromachines (Basel)
Lim H, Shim W, Kim TH.
europepmc   +1 more source

Bipolar Switching Properties and Reaction Decay Effect of BST Ferroelectric Thin Films for Applications in Resistance Random Access Memory Devices. [PDF]

Nanomaterials (Basel)
Wang YC, Chen KH, Kao MC, Chen HC, Cheng CM, Huang HX, Huang KC.   +6 more
europepmc   +1 more source

Oxygen Ion Concentration Distribution Effect on Bipolar Switching Properties of Neodymium Oxide Film's Resistance and Random Access Memory Devices. [PDF]

Nanomaterials (Basel)
Chen KH, Kao MC, Chen HC, Wang YC.
europepmc   +1 more source

Optoelectronic array of photodiodes integrated with RRAMs for energy-efficient in-sensor computing. [PDF]

Light Sci Appl
Pan W, Wang L, Tang J, Huang H, Hao Z, Sun C, Xiong B, Wang J, Han Y, Li H, Gan L, Luo Y.   +11 more
europepmc   +1 more source

Investigation of dual memory behavior in RRAM: coexistence of resistive and capacitive switching phenomena. [PDF]

Sci Rep
Kim H, Kim S, Cho JY, Lee SH, Kim MH.
europepmc   +1 more source

Fully memristive spiking neural network for energy-efficient graph learning. [PDF]

Sci Adv
Shi T, Gao L, Zhou R, Tian Y, Chen P, Ding Y, Tang S, Ma H, Lu J, Zhang H, Wang Z, Lyu B, Zhang X, Yan X, Liu Q.   +14 more
europepmc   +1 more source

Modeling of Conduction Mechanism in Filament-free Multi-layer Bulk RRAM. [PDF]

IEEE Trans Electron Devices
Zhou Y, Kumar A, Park J, Zhang Y, Zhou Y, Kim S, Cubukcu E, Kuzum D.   +7 more
europepmc   +1 more source

Memristor-Based Artificial Neural Networks for Hardware Neuromorphic Computing. [PDF]

Research (Wash D C)
Jin B, Wang Z, Wang T, Meng J.
europepmc   +1 more source

Coexistence of WORM and RRAM Resistive Switching in Coumarin Derivatives: A Comprehensive Performance Analysis. [PDF]

ACS Omega
Deb R, Banik H, De UC, Bhattacharjee D, Alibrahim KA, Alodhayb AN, Hussain SA.   +6 more
europepmc   +1 more source

Doping-induced performance optimization in monolayer WS₂ memristor: reduced variability and contact resistance. [PDF]

RSC Adv
Tanisha TT, Hassan O, Alam MK.
europepmc   +1 more source