Results 131 to 140 of about 16,611 (244)

A hardware demonstration of a universal programmable RRAM-based probabilistic computer for molecular docking. [PDF]

Nat Commun
He Y, Hong MC, Ding Q, Lin CS, Lai CM, Fang C, Gong X, Hou TH, Liang G.   +8 more
europepmc   +1 more source

Device-physics co-design of hybrid RRAM-MRAM crossbars: overcoming stochastic non-idealities for energy efficient edge speech recognition

Liu, Longchao, Guo, Zhipeng, Xing, Guoliang, Xing, Guozhong, Li, Yu, Wang, Xinying, Dong, Fengjun, Zhao, Zhihao, Gao, Xingyu, Zhang, Yifan   +9 more
openalex   +1 more source

Analysis of Read Margin and Write Power Consumption of a 3-D Vertical RRAM (VRRAM) Crossbar Array

, 2018
Sujin Choi, Wookyung Sun, Hyungsoon Shin
openalex   +1 more source

Investigation of Electron Transport Layer Influence on Asymmetric Bipolar Switching in Transparent BST-Based RRAM Devices. [PDF]

Micromachines (Basel)
Chen KH, Kao MC, Chen HC, Wang YC, Cheng CM, Xu WM.   +5 more
europepmc   +1 more source

A Fully Si-Compatible Ni/Si₃N₄/Al₂O₃/<i>p</i> ⁺ Poly-Si RRAM Device for Analog Synapse and Its System-Level Assessment toward Processing-in-Memory Applications. [PDF]

ACS Omega
Lee Y, Kim S, Kim S, Shim W, Kim S, Cho S.   +5 more
europepmc   +1 more source

Characterization and Mitigation of ADC Noise by Reference Tuning in RRAM-Based Compute-In-Memory [PDF]

Wei Yan, Zishen Wan, Brian Crafton, Samuel Spetalnick, Arijit Raychowdhury   +4 more
openalex   +1 more source

Design of an RRAM-Based Joint Model for Embedded Cellular Smartphone Self-Charging Device. [PDF]

Micromachines (Basel)
Vishwakarma A, Vishwakarma A, Komelj M, Vishvakarma SK, Hübner M.   +4 more
europepmc   +1 more source

Role of interface reaction on resistive switching of Metal/a-TiO2/Al RRAM devices [PDF]

, 2010
Hu Young Jeong, Jeong Yong Lee, Sung‐Yool Choi   +2 more
openalex   +1 more source

Experimental and Theoretical Study of Multifilamentary Resistive Switching in Nanoscale Transition Metal Oxide Films. [PDF]

ACS Omega
Fedotov MI, Klyukina EV, Vankaev AS, Znamenskii AG, Koveshnikov SV.   +4 more
europepmc   +1 more source

Al filament-induced unipolar resistive switching in sputtered Al-rich AlN memristors with low operating voltage and high memory window. [PDF]

RSC Adv
Xiao A, Zhao L, Yang Y, Jin C, Yang X, Ma L, Tian F, Hu W, Huang Z, Gu H.   +9 more
europepmc   +1 more source