Results 141 to 150 of about 16,611 (244)

Forming and Resistive Switching of HfO₂-Based RRAM Devices at Cryogenic Temperature [PDF]

Emilio Pérez-Bosch Quesada, Alberto Mistroni, Ruolan Jia, Keerthi Dorai Swamy Reddy, Felix Reichmann, Helena Castán, S. Dueñas, Christian Wenger, Eduardo Pérez   +8 more
openalex   +1 more source

IGZO and RRAM team up [PDF]

Nature Electronics, 2020
openaire   +1 more source

Random telegraph noise analysis to investigate the properties of active traps of HfO<inf>2</inf>-based RRAM in HRS

, 2013
Francesco Maria Puglisi, Paolo Pavan, Andrea Padovani, Luca Larcher   +3 more
openalex   +2 more sources

A Reconfigurable Memristor-Based Computing-in-Memory Circuit for Content-Addressable Memory in Sensor Systems. [PDF]

Sensors (Basel)
Hu H, Liu Y, Liu S, Wang J, Xiao S, Yan S, Pan R, Wang Y, Liao X, Mao T, Chen Y, Wang X, Liu Y.   +12 more
europepmc   +1 more source

Density Enhancement of RRAMs using a RESET Write Termination for MLC Operation

, 2021
Hassen Aziza, Said Hamdioui, Moritz Fieback, Mottaqiallah Taouil, Mathieu Moreau   +4 more
openalex   +2 more sources

Multi-Bit Resistive Random-Access Memory Based on Two-Dimensional MoO₃ Layers. [PDF]

Nanomaterials (Basel)
Liu K, Jiang W, Zhou L, Zhou Y, Hu M, Geng Y, Zhang Y, Qiao Y, Wang R, Sun Y.   +9 more
europepmc   +1 more source

Resistive Switching Random-Access Memory (RRAM): Applications and Requirements for Memory and Computing. [PDF]

Chem Rev
Ielmini D, Pedretti G.
europepmc   +1 more source

Experimental and theoretical study of electrode effects in HfO<inf>2</inf> based RRAM

, 2011
C. Cagli, Julien Buckley, V. Jousseaume, T. Cabout, A. Salaün, H. Grampeix, J. F. Nodin, H. Feldis, A. Persico, J. Cluzel, Paolo Lorenzi, Leo Massari, Rosario Rao, Fernanda Irrera, F. Aussenac, C. Carabasse, M. Coué, P. Calka, E. Martínez, L. Perniola, Ph. Blaise, Zheng Fang, Yang Yu, G. Ghibaudo, Damien Deleruyelle, M. Bocquet, Christophe Müller, Andrea Padovani, Onofrio Pirrotta, Luca Vandelli, Luca Larcher, G. Reimbold, B. De Salvo   +32 more
openalex   +2 more sources

The Influence of the Ar/N₂ Ratio During Reactive Magnetron Sputtering of TiN Electrodes on the Resistive Switching Behavior of MIM Devices. [PDF]

Materials (Basel)
Jeżak P, Seweryn A, Klepka M, Mroczyński R.   +3 more
europepmc   +1 more source

A RRAM-based grey pattern recognition system with spike-rate-dependent plasticity protocol

, 2017
Zheng Zhou, Chen Liu, Yuning Jiang, Runze Han, Yudi Zhao, Peng Huang, Lifeng Liu, Xiaoyan Liu, Jinfeng Kang   +8 more
openalex   +2 more sources