Results 161 to 170 of about 13,298 (199)
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Parasitic engineering for RRAM control
Solid-State Electronics, 2018The inevitable current overshoot which follows forming in filamentary RRAM devices is often perceived as a source of variability that should be minimized. This sentiment has led to efforts to curtail the overshoot by decreasing the parasitic capacitance using highly integrated 1T-1R or 1R-1R device structures. While this is readily achievable in single
P R, Shrestha +6 more
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Three-Dimensional Vertical RRAM
2021This chapter provides a comprehensive review on the progress achieved concerning Three-Dimensional (3D) vertical resistive random access memory (VRRAM). Compared with 3D X-point structure, the 3D VRRAM exhibits several advantages. A self-rectifying device is one type of self-selective RRAM cell, working similarly as a combination of diode and resistive
Qing Luo, Ming Liu
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Materials Today, 2019
Abstract Resistance random-access memory (RRAM) is a promising candidate for both the next-generation non-volatile memory and the key element of neural networks. In this article, different types of Mott-transition (the transition between the Mott insulator and metallic states) mechanisms and Mott-transition-based RRAM are reviewed.
Yue Wang +8 more
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Abstract Resistance random-access memory (RRAM) is a promising candidate for both the next-generation non-volatile memory and the key element of neural networks. In this article, different types of Mott-transition (the transition between the Mott insulator and metallic states) mechanisms and Mott-transition-based RRAM are reviewed.
Yue Wang +8 more
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Intelligent Computing with RRAM
2019 IEEE 11th International Memory Workshop (IMW), 2019RRAM-based in-memory-computing is a promising approach to go beyond von Neumann architecture and attributes to remarkable improvement in power efficiency and performance density. In this work, we examine our developments in device optimization for high-linearity SET/RESET updating and analyze the device reliability issues.
Peng Yao +7 more
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Advanced Simulation of RRAM Memory Cells
2019 IEEE 13th International Conference on ASIC (ASICON), 2019Resistive random-access memories (RRAMs) are overwhelmingly viewed as potential candidates for the next generation of non-volatile memory devices. Here, we discuss the advantages of the kinetic Monte Carlo (KMC) simulation framework for RRAMs. We use a robust KMC simulator to analyze transport in promising oxide structures.
Badami, Oves +5 more
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RRAM based learning acceleration
Proceedings of the International Conference on Compilers, Architectures and Synthesis for Embedded Systems, 2016Deep Learning (DL) is becoming popular in a wide range of domains. Many emerging applications, ranging from image and speech recognition to natural language processing and information retrieval, rely heavily on deep learning techniques, especially the Neural Networks (NNs).
Yu Wang +5 more
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RRAM – Based - Equivalent Neural Network
2021The paper shows the capabilities of RRAM to model Neural Networks. The objectives of the work are to provide a likely RRAM based neuron model, and to emulate RRAM Bridge; which is used for synaptic weight adjustment. In order to analyze and design RRAM circuits, a Laplace domain expression has been derived. These equations can then be used for modeling
Ali Mohamed, Ali AbuAssal, Osama Rayis
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2016
In the age of Big Data, it has been always a dream for researchers to find the next generation nonvolatile memory with higher density, lower latency and lower cost. As a matter of fact, the last mainstream memory, NAND Flash memory, was created decades ago.
Huaqiang Wu +4 more
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In the age of Big Data, it has been always a dream for researchers to find the next generation nonvolatile memory with higher density, lower latency and lower cost. As a matter of fact, the last mainstream memory, NAND Flash memory, was created decades ago.
Huaqiang Wu +4 more
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Towards Automotive Grade Embedded RRAM
2018 48th European Solid-State Device Research Conference (ESSDERC), 2018Most types of resistive RAM (RRAM) explored over the past 20 years have suffered from reliability problems. As a result, RRAM has received relatively little consideration for use in automotive applications. The present article describes an improved subquantum Conductive Bridging RAM (CBRAM®) cell whose reliability appears robust enough for automotive ...
J.R. Jameson +12 more
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Unveiling switching mechanisms in RRAMs
2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), 2010Resistive random access memories (RRAMs) are deemed as one type of a few promising alternative non-volatile memories (NVMs) to the mainstreamNAND/NOR flash. The switching mechanisms for RRAMs, however, remain murky and a quantitative or semi-empiricalmodel is urgently needed.
null Zhiping Yu, null Yan Wang
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