Results 171 to 180 of about 51,456 (290)

Humidity Sensing in Graphene-Trenched Silicon Junctions via Schottky Barrier Modulation. [PDF]

Nanomaterials (Basel)
Qadir A, Ali M, Khaliq A, Karim S, Farooq U, Xu H, Yu Y.   +6 more
europepmc   +1 more source

Origins of the Schottky Barrier to a 2DHG in a Au/Ni/GaN/AlGaN/GaN Heterostructure. [PDF]

ACS Appl Electron Mater, 2022
Do HB, Zhou J, De Souza MM.
europepmc   +1 more source

Ag Nanowire‐Integrated MoS2/ZnO Heterojunctions for Highly Efficient Photogenerated Charge Transfer

Advanced Electronic Materials, Volume 11, Issue 6, May 2025.
A versatile strategy is reported for fabricating multi‐dimensional heterojunctions with significantly improved charge transfer capability. By integrating Ag nanowires with a MoS2/ZnO heterojunction, a fourfold increase in surface photovoltage is achieved, reaching 200 mV under visible light illumination.
Anh Thi Nguyen, Jungyoon Cho, Malkeshkumar Patel, Duc Anh Vu, Jungeun Song, Dongseok Suh, Ambrose Seo, Joondong Kim, Dong‐Wook Kim   +8 more
wiley   +1 more source

Effect of Chromium Adhesion Layer Thickness on Contact Resistance and Schottky Barrier Characteristics in WSe₂ Field-Effect Transistor. [PDF]

Nanomaterials (Basel)
Kim SH, Lee SY, Kim TJ, Kyhm K, Watanabe K, Taniguchi T, Yee KJ.   +6 more
europepmc   +1 more source

Role of Vacancy Defects in Reducing the Responsivity of AlGaN Schottky Barrier Ultraviolet Detectors. [PDF]

Nanomaterials (Basel), 2022
Huang Y, Yang J, Zhao D, Zhang Y, Liu Z, Liang F, Chen P.   +6 more
europepmc   +1 more source

Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices

Advanced Electronic Materials, EarlyView.
This work fabricates SnO2/SnS2 RRAM using (NH4)4Sn2S6, achieving 224 pJ set energy at 0.4 V with >1000‐cycle stability and 4 × 104 s retention. XPS/SEM/AFM‐validated interfacial engineering enables uniform switching, advancing low‐power neuromorphic memory development.
WenBin Liu, Lifang Hu, RuoXuan Zhao, ZhiYong Hou, JinYu Tian   +4 more
wiley   +1 more source

Direct Probing of Trap Dynamics in β-Ga₂O₃ Schottky Barrier Diodes Using Single-Voltage-Pulse Characterization. [PDF]

Adv Sci (Weinh)
Vo TH, Kim S, Park JH, Jeon DW, Hwang WS, Hwang J.   +5 more
europepmc   +1 more source

Tuning Schottky Barrier of Single-Layer MoS₂ Field-Effect Transistors with Graphene Electrodes. [PDF]

Nanomaterials (Basel), 2022
Jang AR.
europepmc   +1 more source

Gate‐Dielectric Surface Engineering With Fluorinated Monolayers: Minimizing Contact Resistance and Nonidealities in OFETs

Advanced Electronic Materials, EarlyView.
Surface engineering of gate dielectrics with fluorinated self–assembled monolayers significantly improves the performance of organic field–effect transistors. In this study, Al2O3 functionalized with fluorinated phosphonic acids reduces contact resistance and hysteresis while achieving near‐zero threshold voltages, offering an alternative to ...
Shaghayegh Mesforush, Alba Cazorla, Hayley Melville, Philippe Blanchard, Hagen Klauk, Ute Zschieschang, Min Zhang, Lamiaa Fijahi, Marta Mas‐Torrent, Esther Barrena   +9 more
wiley   +1 more source

Impact of the Schottky Barrier and Contact-Induced Strain Variations inside the Channel on the Electrical Behavior of Monolayer MoS₂ Transistors. [PDF]

Small Sci
Panasci SE, Schilirò E, Greco G, Fiorenza P, Vivona M, Di Franco S, Roccaforte F, Esposito F, Bosi M, Attolini G, Píš I, Bondino F, Pedio M, Madonia A, Cannas M, Agnello S, Seravalli L, Giannazzo F.   +17 more
europepmc   +1 more source