Results 201 to 210 of about 51,456 (290)

Drift of Schottky Barrier Height in Phase Change Materials. [PDF]

ACS Nano
Nir-Harwood RG, Cohen G, Majumdar A, Haight R, Ber E, Gignac L, Ordan E, Shoham L, Keller Y, Kornblum L, Yalon E.   +10 more
europepmc   +1 more source

Solution Processed Polymer Source‐Gated Transistors for Zero‐Power Photosensing

Advanced Electronic Materials, EarlyView.
This study demonstrates the first solution‐processed bulk heterojunction organic source‐gated transistors (OSGTs) and photo‐OSGTs fabricated using DPP‐DTT: PCBM. Copper‐electrode OSGTs show deep off‐state at zero gate‐source voltage, channel length‐independent on‐state current, and low voltage saturation (γ = 0.22).
Eva Bestelink, Ahmed Wafic, Mattia Scagliotti, Dimitar Kutsarov, Imalka Jayawardena, Matteo Rapisarda, Radu A. Sporea   +6 more
wiley   +1 more source

Schottky barrier memory based on heterojunction bandgap engineering for high-density and low-power retention. [PDF]

Discov Nano
Kim H, Kim Y, Oh K, Park JH, Baek CK.
europepmc   +1 more source

Quantitative Analysis and Mitigation Strategy for Hot Carrier Degradation in a‐IGZO Transistor

Advanced Electronic Materials, EarlyView.
This work presents a quantitative analysis of hot carrier degradation in a‐IGZO transistors, revealing an asymmetric drain‐side Schottky barrier increase and localized defect generation. The transfer length method and SCLC measurements enable defect quantification.
Changeon Jin, Sunwoong Ham, Taewon Seo, Dae Hwan Kang, Yoonyoung Chung   +4 more
wiley   +1 more source

Tuning the Schottky barrier height in single- and bi-layer graphene-inserted MoS₂/metal contacts. [PDF]

Sci Rep
Zhao X, Xia C, Li L, Wang A, Cao D, Zhang B, Fang Q.   +6 more
europepmc   +1 more source

Topological Materials and Related Applications

Advanced Electronic Materials, EarlyView.
This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti, Roberto Mantovan, Emanuele Longo, Harold J. W. Zandvliet, Pantelis Bampoulis, Yu Pan, Fan Li, Xia Wang, Payton Downey, Alessandro Molle   +9 more
wiley   +1 more source

Optimized nano-scaled drain- and gate-engineered Schottky barrier MOSFET with improved ambipolarity and RF characteristics. [PDF]

Nanoscale Adv
Bashir F, Alzahrani AS, Zahoor F.
europepmc   +1 more source

Orbital and Electrical Dual Function of Polymer Intercalant for Promoting NH4+ Storage in Vanadium Oxide Anode

Advanced Energy Materials, Volume 15, Issue 11, March 18, 2025.
The impact of polyaniline insertion on the atomic orbitals and electronic structure of vanadium oxide anode is systematically investigated for the first time. The electrode exhibits an outstanding capacity and unprecedent long‐term cycling life, owing to the electron transition to the V 3dxy state and the enhanced diffusion kinetics.
Yue Zhang, Zihang Huang, Lei Lei, Hua Fan, Xu Han, Hui Li, Tianyi Ma   +6 more
wiley   +1 more source

Dual-Functional Schottky-Barrier-Free Plasmonic TiN/TiO₂ Photocatalyst for Efficient NH₃ and H₂ Production. [PDF]

ACS Appl Mater Interfaces
Bai X, An K, Jia L, Guo Y, Hu J, Jia G, Jiang R, Wang J, Yu JC.   +8 more
europepmc   +1 more source