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Schottky and Bardeen limits for Schottky barriers
Journal of Vacuum Science and Technology, 1979An estimate for the minimum (Bardeen limit) and maximum (Schottky limit) of the interface index, S, is calculated. It is shown that current measurements on high S materials are near or at the maximum value for S.
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Schottky Barrier Betavoltaic Battery
IEEE Transactions on Nuclear Science, 1976A new nuclear betavotaic battety is described. It uses a Schottky barrier in place of the more standard p-n junction diode, along with 147Pm metal film rather than Pm2O3 oxide as in the commercially available Betacel. Design details of the battery including measurement of absorption, conversion efficiency, thickness etc.
F. K. Manasse, J. J. Pinajian, A. N. Tse
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1992
The classical Schottky barrier is introduced. The Schottky approximation is initially used with parameters listed and F(x) and Ψ(x) are given. The zero current solution for n(x). Diffusion potential and junction field is given. The Debye length and barrier width are defined. The accuracy of the Schottky approximation is discussed.
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The classical Schottky barrier is introduced. The Schottky approximation is initially used with parameters listed and F(x) and Ψ(x) are given. The zero current solution for n(x). Diffusion potential and junction field is given. The Debye length and barrier width are defined. The accuracy of the Schottky approximation is discussed.
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Ambipolar Schottky-barrier TFTs
IEEE Transactions on Electron Devices, 2002A novel Schottky-barrier metal-oxide-semiconductor thin-film transistor (SBTFT) was successfully demonstrated and characterized. The new SBTFT device features a field-induced-drain (FID) region, which is controlled by a metal field-plate lying on top of the passivation oxide.
null Horng-Chih Lin +4 more
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Metal-germanium Schottky barriers
Solid-State Electronics, 1973Abstract A systematic study has been made of the electrical characteristics of Schottky barriers fabricated by evaporating various metal films on n -type chemically cleaned germanium substrates. The diodes, with the exception of AlGe contacts, exhibit near-ideal electrical characteristics and age only slightly towards lower barrier height values ...
A. Thanailakis, D.C. Northrop
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Contemporary Physics, 1982
Abstract The precise mechanisms governing the formation of Schottky barriers at metal-semiconductor interfaces are not well understood, despite a great many studies over a long period of time. During the last few years modern experimental and theoretical techniques have been applied to study these mechanisms and a great deal of progress has been made ...
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Abstract The precise mechanisms governing the formation of Schottky barriers at metal-semiconductor interfaces are not well understood, despite a great many studies over a long period of time. During the last few years modern experimental and theoretical techniques have been applied to study these mechanisms and a great deal of progress has been made ...
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Journal of Applied Physics, 1972
Metal surface barriers consisting of gold, nickel, tantalum, and aluminum on zinc telluride have been investigated. The behavior of gold and nickel barriers agrees with simple thermionic Schottky barrier theory. The barrier height found for gold is 0.64 eV and for nickel 0.65 eV.
W. D. Baker, A. G. Milnes
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Metal surface barriers consisting of gold, nickel, tantalum, and aluminum on zinc telluride have been investigated. The behavior of gold and nickel barriers agrees with simple thermionic Schottky barrier theory. The barrier height found for gold is 0.64 eV and for nickel 0.65 eV.
W. D. Baker, A. G. Milnes
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Tunneling in Schottky barriers
1970The tunneling characteristics of metal contacts on n-type CdTe and p-type InAs have been measured. Both the forward and reverse bias characteristics on CdTe are in good agreement with the two-band model for the energy vs. complex momentum relationship.
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Molybdenum-Silicon Schottky Barrier
Journal of Applied Physics, 1966An ideal metal-semiconductor Schottky barrier contact was made by chemically depositing thin films of molybdenum on n-type silicon by the hydrogen reduction of molybdenum pentachloride at temperatures between 390°C and 500°C. Current-voltage, capacity-voltage, and photoelectric measurements were used to investigate the characteristics of molybdenum ...
Gota Kano +3 more
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Schottky barriers and plasmons
Journal of Vacuum Science and Technology, 1974The changes in the electron exchange and correlation potential are related to the collective excitation at the interface of a metal semiconductor junction. They are shown to change discontinuously across the band gap, and the possible effects on the barrier formation are discussed.
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