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Microwave Schottky Barrier Diodes
1984Point contact diodes have been in use for many decades for mixer and detector application from uhf through millimeter-wave frequencies. The first published paper on the subject appeared in 1874 when Braun reported the asymmetrical nature of conduction between metal points and crystals. Point contacts are relatively unsophisticated devices consisting of
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Schottky-barrier-collector transistor
1966 International Electron Devices Meeting, 1966In saturated switching circuits using junction bipolar transistors, charge-storage due to minority injection into the base and collector is undesirable in terms of switching speed. Efficiency and maximum frequency of operation of class "D" amplifiers using bipolar junction transistor is severely limited by storage effects. Although gold doping has been
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Molecule‐Upgraded van der Waals Contacts for Schottky‐Barrier‐Free Electronics
Advanced Materials, 2021Xiankun Zhang, Zhuo Kang, Baishan Liu
exaly
Schottky-Barrier Formation and Metallicity
Physical Review Letters, 1989, Spicer, , Cao
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Metallization and Schottky-barrier formation
Physical Review B, 1986, Batra, , Ciraci
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Investigation of Schottky Barriers
1988Abstract : This final report summarizes the technical progress made under the auspices of AFOSR Contract F49620-86-K-0018. Substantial progress was made in two key areas: electronic structure studies of the Schottky barrier and transport studies. With respect to the electronic structure component, we applied ab initio electronic structure techniques to
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