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Millimeter-wave GaAs Schottky-barrier IMPATT diodes
IEEE Transactions on Electron Devices, 1972Recent experimental observations on a Schottky-barrier GaAs IMPATT diode for F-band operation are presented. The diode slices were thinned to 10 to 20 µm by removing the substrate by precision polishing. Output power of 304 mW at 50 GHz with 4.58 percent efficiency was observed. The highest efficiency was 4.72 percent at 55 GHz.
Kiyoshi Nawata +2 more
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Transistor Schottky-barrier-diode integrated logic circuit
IEEE Journal of Solid-State Circuits, 1968A new high-speed low-power logic circuit using Schottky barrier diodes to avoid saturation of bipolar transistors is described. An experiment using discrete devices and a theoretical calculation show the possibility of subnanosecond logic using a saturated-type transistor logic circuit.
Y. Tarui +3 more
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Barrier Height of Titanium Silicide Schottky Barrier Diodes
Japanese Journal of Applied Physics, 1986Schottky barrier diodes were fabricated on n-type Si surfaces with high resistivity. Barriers were produced by TiSi or TiSi2. Barrier height and resistivity of titanium silicide were examined in relation to phase differences identified by X-ray diffraction analysis. Barrier height was found to be unaffected by silicide phase.
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On the Viability of Au/3C-SiC Schottky Barrier Diodes
Materials Science Forum, 2010The electrical characteristics of Au/3C-SiC Schottky diodes were studied and related to crystal defects. A structural analysis performed by transmission electron microscopy (TEM), combined with a current mapping of the surface by conductive atomic force microscopy (C-AFM), indicated that stacking faults (SFs) are the conductive defects having the ...
Eriksson J +6 more
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Effect of Aluminum doping on potential barrier of gold-ZnO-Si Schottky barrier diode
Materials Today: Proceedings, 2021Munendra Singh +2 more
exaly
Metal-Semiconductor Schottky-Barrier Diodes
1980In a metal-semiconductor junction the difference between the work function of the metal φm and the electron affinity χs of an n type semiconductor, Fig. 2.1 (a), determines the barrier height (φm − χs) for the simple model shown on Fig. 2.1(b). This barrier forms by equalization of the Fermi levels across the junction due to the movement of electrons ...
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Characterization of CdS thin films and schottky barrier diodes [PDF]
, 2005 ABSTRACT CHARACTERIZATION OF CdS THIN FILMS AND SCHOTTKY BARRIER DIODES KORKMAZ, SİBEL M.Sc, Department of Physics Supervisor: Prof. Dr. Çiğdem Erçelebi September 2005, 81 pages. CdS thin films were deposited by thermal evaporation method onto glass substrates without any doping.
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