Results 231 to 240 of about 5,171 (275)
Some of the next articles are maybe not open access.
Transient analysis of schottky-barrier diodes
IEE Proceedings I Solid State and Electron Devices, 1988The turnon and turnoff transients of Schottky-barrier diode are determined by analysis based on thermionic emission across the metal-semiconductor barrier and a displacement current within the space charge region. The results of the analysis are compared to those from device simulator and are shown to be in excellent agreement.
A. McCowen, S.B.H. Shaari, K. Board
openaire +1 more source
Limitations to the scaling of Schottky barrier diodes
1981 International Electron Devices Meeting, 1981Schottky barrier diodes are being used with bipolar digital circuits in many new circuit configurations. The need for low barrier Schottky diodes is very apparent now. The extreme sensitivity of the Schottky barrier diodes to temperature makes the range of spread of their parameters (area and barrier height) very limited.
A.K. Kapoor, M. Vora
openaire +1 more source
DLC-Film Schottky Barrier Diodes
Solid State Phenomena, 2005A microwave plasma reactor (MPR) is constructed as a facility for the plasma assisted chemical vapor deposition (PACVD) process. The reactor is a mode-adjustable resonance cavity of cylindrical shape. A 2.45 GHz microwave generator is used to ignite the plasma inside the lengthadjustable cavity.
B. Paosawatyanyong +2 more
openaire +1 more source
Microwave Schottky Barrier Diodes
1984Point contact diodes have been in use for many decades for mixer and detector application from uhf through millimeter-wave frequencies. The first published paper on the subject appeared in 1874 when Braun reported the asymmetrical nature of conduction between metal points and crystals. Point contacts are relatively unsophisticated devices consisting of
openaire +1 more source
Titanium-silicon Schottky barrier diodes
Solid-State Electronics, 1970Abstract Schottky barriers have been formed by vacuum evaporation of titanium onto chemically cleaned n- and p-type silicon. The barrier heights of the contacts were found to 0.50 and 0.61 eV for n- and p-type barriers, respectively. The barrier heights were determined from measurements of the 1 C 2 vs .
openaire +1 more source
Mesa planar Schottky barrier diodes
1971 International Electron Devices Meeting, 1971One of the constraints in the application of Schottky barrier diodes for power, logic, microwave or photodetection has been low reverse breakdown voltage. The breakdown voltage for these diodes is primarily governed by a semicircular shaped electrical fringing field.
K.G. Ashar, N.G. Anantha
openaire +1 more source
Hydrogen-sensitive Schottky barrier diodes
Surface Science, 1979Abstract It was found that the barrier height of the PdZnO contacts decreased when exposed to air containing hydrogen gas. The effect can be attributed to the lowering of the palladium work function due to absorption of hydrogen. When the temperature was increased, the sensitivity of the contacts to hydrogen increased and the response time decreased.
openaire +1 more source
Design of Schottky-barrier diode-clamped transistor layouts
1973 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1973Describes an approach to the design of Schottky-clamped integrated circuit transistor layouts. Three-dimensional distributed resistances are modeled using a grid of lumped resistors. A computer circuit analysis program is used to obtain a simple lumped equivalent circuit for the clamped transistor.
R.A. Heald, D.A. Hodges
openaire +1 more source
Current transport in Schottky-barrier diodes
Journal of Applied Physics, 1976Current transport in Schottky diodes is examined by solving the Boltzmann equation within the semiconductor. The effect of the metal is taken into account by imposing suitable boundary conditions to the above solution, and it is shown that the usual drift-diffusion equation is not correct in the vicinity of the junction. Generalized transport equations
openaire +1 more source
Thermal characterization of gallium oxide Schottky barrier diodes
Review of Scientific Instruments, 2018The higher critical electric field of β-gallium oxide (Ga2O3) gives promise to the development of next generation power electronic devices with improved size, weight, power, and efficiency over current state-of-the-art wide bandgap devices based on 4H-silicon carbide (SiC) and gallium nitride (GaN).
Bikramjit Chatterjee +5 more
openaire +2 more sources