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Characteristics of aluminum-silicon schottky barrier diode
Solid-State Electronics, 1970Abstract Aluminum n -type silicon Schottky barrier diodes with near-ideal characteristics have recently been developed. In this paper the characteristics of such a Schottky barrier are discussed. The I–V characteristics agree well with the theoretical thermionic emission model.
Yu, A. Y. C., Mead, C. A.
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Engineered Schottky barrier diodes for the modification and control of Schottky barrier heights
Journal of Applied Physics, 1987A technique for fabricating controlled Schottky barrier heights to GaAs over the entire band gap is demonstrated. Thin, highly doped semiconductor layers at the metal-semiconductor interface allowed the reproducible control of the effective barrier height on n-type GaAs from near zero (i.e., ohmic behavior at 300 K) to 1.33 eV (the band gap equals 1.43
S. J. Eglash +7 more
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1992
Schottky barriers and pn-junctions are the simplest active solid state devices. Their rectifying characteristics as well as the ability to expand or contract their space charge layer with bias is useful in many applications. With appropriate material and doping design, a wide variety of desirable operating characteristics can be obtained.
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Schottky barriers and pn-junctions are the simplest active solid state devices. Their rectifying characteristics as well as the ability to expand or contract their space charge layer with bias is useful in many applications. With appropriate material and doping design, a wide variety of desirable operating characteristics can be obtained.
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Photocurrents in P3MeT Schottky barrier diodes
Synthetic Metals, 1999Abstract The photocurrent action spectrum of a Schottky diode formed from electrodeposited poly(3-methylthiophene) is shown to follow closely the UV-visible absorption spectrum. At low forward bias, the peak photocurrent asymptotes to the expected square-root dependence on total potential, Vt, across the depletion region.
Jones, G. W. +2 more
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Limitations to the scaling of Schottky barrier diodes
1981 International Electron Devices Meeting, 1981Schottky barrier diodes are being used with bipolar digital circuits in many new circuit configurations. The need for low barrier Schottky diodes is very apparent now. The extreme sensitivity of the Schottky barrier diodes to temperature makes the range of spread of their parameters (area and barrier height) very limited.
A.K. Kapoor, M. Vora
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Schottky barrier diodes on 3C-SiC
Applied Physics Letters, 1985Schottky barrier contacts have been made on n-type 3C-SiC epitaxially grown by chemical vapor deposition, and their characteristics were studied by the capacitance and photoresponse measurements. By evaporating Au onto chemically etched surfaces of 3C-SiC, good quality Schottky barrier junctions have been obtained.
S. Yoshida +4 more
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Low storage Schottky barrier diode transistors
1968 International Electron Devices Meeting, 1968Nongold doped transistors can exhibit low storage times if they are prevented from going into heavy saturation. A Schottky barrier diode placed across the collector-base junction can be used to control transistor storage times. Such a device is referred to as a Schottky barrier diode transistor (SBDT).
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GaAs Schottky-barrier avalanche diodes
Solid-State Electronics, 1970Abstract Efficient microwave power generation in a mesa type GaAs Schottky-barrier avalanche diode is reported. An output power of 600 mW (c.w.) at 8.2 GHz with an efficiency over 10 per cent was obtained when the diodes were mounted with the metal-semiconductor interface adjacent to the heat sink.
C.K. Kim, L.D. Armstrong
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Aging effects in GaAs Schottky barrier diodes
27th Annual Proceedings., International Reliability Physics Symposium, 1989The stability of the barrier height of Au/W/GaAs and Au/Pt/Ti/GaAs Schottky barriers under long-term biasing conditions is discussed. Both barrier types exhibit decreases in barrier height under long-term reverse bias conditions, with the changes seen for the Au/W/GaAs diodes (30-50 MeV) much greater than those for the Au/Pt/Ti/GaAs diodes (5 MeV). The
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Microwave Schottky Barrier Diodes
1984Point contact diodes have been in use for many decades for mixer and detector application from uhf through millimeter-wave frequencies. The first published paper on the subject appeared in 1874 when Braun reported the asymmetrical nature of conduction between metal points and crystals. Point contacts are relatively unsophisticated devices consisting of
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