Tuneable Schottky contact of MoSi2N4/TaS2 van der Waals heterostructure [PDF]
Heliyon, 2023 The two-dimensional MoSi2N4 monolayer is an emerging semiconductor material that offers considerable promise due to its ultra-thin profile, tuneable mechanical properties, excellent optoelectronic properties and exceptional environmental stability.
Jinglin Xia +7 more
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Electron Spin Injection at a Schottky Contact [PDF]
Physical Review B, 2002 We investigate theoretically electrical spin injection at a Schottky contact between a spin-polarized electrode and a non-magnetic semiconductor.
A.F. Isakovic +13 more
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First-Principles Study of Biaxial Strain Effects on Schottky Barrier Modulation in Graphene/ZnSe Heterostructures [PDF]
NanomaterialsReducing the Schottky barrier at the metal–semiconductor interface and achieving Ohmic contact is crucial for the development of high-performance Schottky field-effect transistors. This paper investigates the stability, interface interactions, interlayer
Guowang Pang +3 more
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On the issue of ohmicity of Schottky contacts [PDF]
Semiconductors, 2015 An analysis is made of the conditions for ohmic contacts realization in the case of Schottky contacts. Based on the classical notions about the mechanisms of current flow, we consider the generalized model of Schottky contact that takes into account the ...
Belyaev, A. E. +2 more
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Thermal Annealing Behaviour on Electrical Properties of Pd/Ru Schottky Contacts on n-Type GaN [PDF]
Журнал нано- та електронної фізики, 2011 We have investigated the electrical properties of Pd/Ru Schottky contacts on n-GaN as a function of annealing temperature by current-voltage (I-V) and capacitance-voltage (C-V) measurements.
N. Nanda Kumar Reddy, V. Rajagopal Reddy
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Silicon Nanowire-Based Schottky Diodes for Enhanced Temperature Sensing and Extended Operable Range [PDF]
SensorsThis paper analyzes microstructural layout and electrical behavior of silicon nanowire-based Schottky diodes, for use as wide-domain temperature sensors.
Gheorghe Pristavu +7 more
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First-Principles Study on the Modulation of Schottky Barrier in Graphene/Janus MoSSe Heterojunctions by Interface Contact and Electric Field Effects [PDF]
NanomaterialsConstructing heterojunctions can combine the superior performance of different two-dimensional (2D) materials and eliminate the drawbacks of a single material, and modulating heterojunctions can enhance the capability and extend the application field ...
Zhe Zhang +3 more
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Ultrafast Self‐Driven WSe2 Photodetectors with Bottom Schottky Contacts [PDF]
Advanced ScienceConventional top‐contact two dimensional (2D) Schottky photodetectors suffer from light shadowing and contact damage, leading to Fermi‐level pinning and performance degradation.
Jian Li +10 more
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Results in Physics, 2023 The contact type between graphene and semiconducting two-dimensional materials is a crucial factor in determining the performance of nanoscale electronic devices based on two-dimensional materials. Recently, SiCP4 is proposed to have high charge mobility
Shaofeng Zhang, Zhaowu Wang
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Determination of Schottky barrier height of graphene electrode on AlGaN/GaN heterostructure
AIP Advances, 2021 A graphene Schottky contact was fabricated on an AlGaN/GaN heterostructure and subsequently analyzed. The calculated and experimentally measured Schottky barrier heights (SBHs) determined using the theoretical Schottky–Mott model, the thermionic emission
Bhishma Pandit, Jaeho Kim, Jaehee Cho
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