Results 91 to 100 of about 47,292 (298)

Reverse I–V–T analysis of Ti and Ni Schottky diodes on 6H-SiC with three contact areas [PDF]

open access: yesAIP Advances
This work investigates the reverse-bias electrical behavior of Ti and Ni Schottky diodes fabricated on n-type 6H-SiC epitaxial layers, with contact areas of three different sizes: large (1.6 × 1.6 mm2), medium (1.6 × 0.4 mm2), and small (0.4 × 0.4 mm2 ...
Elhachani Bounab   +6 more
doaj   +1 more source

Interfacial Modulation for High‐Efficiency Large‐Area Organic Photovoltaics and Perovskite‐Organic Tandem Solar Modules

open access: yesAdvanced Functional Materials, EarlyView.
Self‐assembled monolayers (SAMs) are promising hole‐transporting materials for organic photovoltaics (OPVs), but suffer from self‐aggregation and poor large‐area uniformity. We find that interfacial modification using nicotinic hydrazide can eliminate the residual SAM aggregates by forming energetically favorable complexes, yielding uniform SAM.
Seongwon Yoon   +10 more
wiley   +1 more source

Statistically Resolving Thickness‐Dependent Electrical Characteristics in Multilayer‐MoS2 Transistors

open access: yesAdvanced Functional Materials, EarlyView.
A large number of MoS2 flakes were screened to obtain high‐quality flakes based on optical intensities in R, G, and B channel images. The flakes were classified from Level 1 to 6 based on optical intensities in the R, G, and B channel images. Low‐quality flake exhibited wrinkled, folded, or overlapped features, while high‐quality displayed a neat ...
Sanghyun Lee   +11 more
wiley   +1 more source

A Current Transport Mechanism on the Surface of Pd-SiO2 Mixture for Metal-Semiconductor-Metal GaAs Diodes

open access: yesAdvances in Materials Science and Engineering, 2013
This paper presents a current transport mechanism of Pd metal-semiconductor-metal (MSM) GaAs diodes with a Schottky contact material formed by intentionally mixing SiO2 into a Pd metal.
Shih-Wei Tan, Shih-Wen Lai
doaj   +1 more source

Electrical Nanoprobing of Semiconducting Carbon Nanotubes using an Atomic Force Microscope

open access: yes, 2003
We use an Atomic Force Microscope (AFM) tip to locally probe the electronic properties of semiconducting carbon nanotube transistors. A gold-coated AFM tip serves as a voltage or current probe in three-probe measurement setup.
Brink, M.   +5 more
core   +1 more source

Multi‐Scale Interface Engineering of MXenes for Multifunctional Sensory Systems

open access: yesAdvanced Functional Materials, EarlyView.
MXenes, as two‐dimensional transition metal carbides and nitrides, demonstrate remarkable capabilities for multifunctional sensing applications. This review systematically examines multi‐scale interface engineering approaches that enhance sensing performance, enable diverse detection functionalities, and improve system‐level compatibility in MXene ...
Jiaying Liao, Sin‐Yi Pang, Jianhua Hao
wiley   +1 more source

Comparison of 4H-SiC Radiation Detectors Based on PN Junctions and Schottky Contacts [PDF]

open access: yesEPJ Web of Conferences
Silicon carbide (SiC) is a material that shows great promise in the fabrication of semiconductor radiation detectors intended for harsh environments, such as space missions, nuclear reactors, or direct neutron detection. This is primarily attributable to
Kurucová Nikola   +5 more
doaj   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand   +13 more
wiley   +1 more source

Furan‐Substituted Phosphine‐Oxide as an Efficient Interfacial Modifier for Wide‐Bandgap Perovskite Solar Cells

open access: yesAdvanced Functional Materials, EarlyView.
We report phosphine‐oxide interlayers for wide‐bandgap perovskite solar cells, in which tuned P = O Lewis basicity enables selective passivation of buried NiOx/perovskite interfaces and introduces interfacial dipoles that strengthen the built‐in field.
JeeHee Hong   +6 more
wiley   +1 more source

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