Results 91 to 100 of about 47,292 (298)
Reverse I–V–T analysis of Ti and Ni Schottky diodes on 6H-SiC with three contact areas [PDF]
This work investigates the reverse-bias electrical behavior of Ti and Ni Schottky diodes fabricated on n-type 6H-SiC epitaxial layers, with contact areas of three different sizes: large (1.6 × 1.6 mm2), medium (1.6 × 0.4 mm2), and small (0.4 × 0.4 mm2 ...
Elhachani Bounab +6 more
doaj +1 more source
Self‐assembled monolayers (SAMs) are promising hole‐transporting materials for organic photovoltaics (OPVs), but suffer from self‐aggregation and poor large‐area uniformity. We find that interfacial modification using nicotinic hydrazide can eliminate the residual SAM aggregates by forming energetically favorable complexes, yielding uniform SAM.
Seongwon Yoon +10 more
wiley +1 more source
A large number of MoS2 flakes were screened to obtain high‐quality flakes based on optical intensities in R, G, and B channel images. The flakes were classified from Level 1 to 6 based on optical intensities in the R, G, and B channel images. Low‐quality flake exhibited wrinkled, folded, or overlapped features, while high‐quality displayed a neat ...
Sanghyun Lee +11 more
wiley +1 more source
This paper presents a current transport mechanism of Pd metal-semiconductor-metal (MSM) GaAs diodes with a Schottky contact material formed by intentionally mixing SiO2 into a Pd metal.
Shih-Wei Tan, Shih-Wen Lai
doaj +1 more source
Electrical Nanoprobing of Semiconducting Carbon Nanotubes using an Atomic Force Microscope
We use an Atomic Force Microscope (AFM) tip to locally probe the electronic properties of semiconducting carbon nanotube transistors. A gold-coated AFM tip serves as a voltage or current probe in three-probe measurement setup.
Brink, M. +5 more
core +1 more source
Multi‐Scale Interface Engineering of MXenes for Multifunctional Sensory Systems
MXenes, as two‐dimensional transition metal carbides and nitrides, demonstrate remarkable capabilities for multifunctional sensing applications. This review systematically examines multi‐scale interface engineering approaches that enhance sensing performance, enable diverse detection functionalities, and improve system‐level compatibility in MXene ...
Jiaying Liao, Sin‐Yi Pang, Jianhua Hao
wiley +1 more source
Comparison of 4H-SiC Radiation Detectors Based on PN Junctions and Schottky Contacts [PDF]
Silicon carbide (SiC) is a material that shows great promise in the fabrication of semiconductor radiation detectors intended for harsh environments, such as space missions, nuclear reactors, or direct neutron detection. This is primarily attributable to
Kurucová Nikola +5 more
doaj +1 more source
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand +13 more
wiley +1 more source
We report phosphine‐oxide interlayers for wide‐bandgap perovskite solar cells, in which tuned P = O Lewis basicity enables selective passivation of buried NiOx/perovskite interfaces and introduces interfacial dipoles that strengthen the built‐in field.
JeeHee Hong +6 more
wiley +1 more source
Enhancing subthreshold slope and ON-current in a simple iTFET with overlapping gate on source-contact, drain Schottky contact, and intrinsic SiGe-pocket. [PDF]
Lin JT, Lin KP, Cheng KM.
europepmc +1 more source

