Results 11 to 20 of about 47,292 (298)

Tunable Contact Types and Interfacial Electronic Properties in TaS₂/MoS₂ and TaS₂/WSe₂ Heterostructures

Molecules, 2023
Following the successful experimental synthesis of single-layer metallic 1T-TaS2 and semiconducting 2H-MoS2, 2H-WSe2, we perform a first-principles study to investigate the electronic and interfacial features of metal/semiconductor 1T-TaS2/2H-MoS2 and 1T-
Xiangjiu Zhu, Hongxing Jiang, Yukai Zhang, Dandan Wang, Lin Fan, Yanli Chen, Xin Qu, Lihua Yang, Yang Liu   +8 more
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Strain and Electric Field Controllable Schottky Barriers and Contact Types in Graphene-MoTe2 van der Waals Heterostructure

Nanoscale Research Letters, 2020
Two-dimensional (2D) transition metal dichalcogenides with intrinsically passivated surfaces are promising candidates for ultrathin optoelectronic devices that their performance is strongly affected by the contact with the metallic electrodes.
Yu Lan, Li-Xin Xia, Tao Huang, Weiping Xu, Gui-Fang Huang, Wangyu Hu, Wei-Qing Huang   +6 more
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Enhanced Non-Uniformity Modeling of 4H-SiC Schottky Diode Characteristics Over Wide High Temperature and Forward Bias Ranges

IEEE Journal of the Electron Devices Society, 2020
A practical model, adequate for full reproduction of inhomogeneous Schottky diodes' forward characteristics over wide high-temperature and bias ranges, is proposed.
Gheorghe Brezeanu, Gheorghe Pristavu, Florin Draghici, Razvan Pascu, Francesco Della Corte, Simone Rascuna   +5 more
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Fundamentals of low-resistive 2D-semiconductor metal contacts: an ab-initio NEGF study

npj 2D Materials and Applications, 2023
Metal contacts form one of the main limitations for the introduction of 2D materials in next-generation scaled devices. Through ab-initio simulation techniques, we shed light on the fundamental physics and screen several 2D and 3D top and side contact ...
Rutger Duflou, Geoffrey Pourtois, Michel Houssa, Aryan Afzalian   +3 more
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Assessment of Linear, Hexagonal, and Octagonal Cell Topologies for 650 V 4H-SiC Inversion-Channel Planar-Gate Power JBSFETs Fabricated With 27 nm Gate Oxide Thickness

IEEE Journal of the Electron Devices Society, 2021
A 27 nm gate oxide thickness has been successfully used for manufacturing high performance 650V 4H-SiC planar-gate, inversion-channel power JBSFETs in a 6-inch commercial foundry with three (Linear, Hexagonal, and Octagonal) cell topologies.
Aditi Agarwal, Kijeong Han, B. J. Baliga
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Rectifying Schottky Contact in ZrN/Polycrystalline p-Ge

IEEE Journal of the Electron Devices Society, 2023
Fermi-level pinning (FLP) at the metal/Ge interface makes it difficult to control the Schottky barrier height, which forces an ohmic behavior on p-Ge and a rectifying behavior on n-Ge.
Kenta Moto, Kaoru Toko, Tomonari Takayama, Toshifumi Imajo, Takamitsu Ishiyama, Keisuke Yamamoto   +5 more
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Electrical characteristics of Al contact to NiSi using thin W layer as a barrier [PDF]

, 1981
We show that the thermal instability that is observed in Schottky diodes with an Al film on NiSi contact to can be removed by introducing a very thin (~250 Å) tungsten film between the Al and the NiSi layers.
Bartur, M., Nicolet, M-A.
core   +1 more source

Comparison between modulations of contact and channel potential in nitrogen dioxide gas response of ambipolar carbon nanotube field-effect transistors

AIP Advances, 2022
Carbon nanotubes (CNTs) are promising materials for gas sensing because of their large specific area and high sensitivity to charge differentiation.
Shota Nakahara, Takahiro Morita, Haruka Omachi, Masafumi Inaba, Michihiko Nakano, Junya Suehiro   +5 more
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Plasma-etch-free β-Ga2O3–NiO–PtOx merged PiN Schottky diode with high-voltage stress reliability [PDF]

APL Electronic Devices
A gallium oxide (Ga2O3)–nickel oxide (NiO) merged PiN Schottky (MPS) diode was fabricated using Ga flux plasma-free etch and platinum oxide (PtOx) contacts.
Marko J. Tadjer, Yuhao Zhang, Travis J. Anderson, Karl D. Hobart, Akito Kuramata, Geoffrey M. Foster, Bixuan Wang, Matthew Porter, Hannah N. Masten, Neeraj Nepal, Boyan Wang, Alan G. Jacobs, Yuan Qin, Joseph A. Spencer   +13 more
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Schottky barrier heights and electronic transport in Ga2O3 Schottky diodes

Materials Research Express, 2023
The Schottky contact, formed at the interface between a metal and a semiconductor, is instrumental in defining the electrical properties of Schottky barrier diodes (SBDs).
Min-Yeong Kim, Dong-Wook Byun, Geon-Hee Lee, Sujitra Pookpanratana, Qiliang Li, Sang-Mo Koo   +5 more
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