Results 21 to 30 of about 47,292 (298)
Frontiers in Materials, 2020 Despite the intensive study on the promotion of device performance, the device physics regarding the effects of Schottky barrier on the charge injection in conjugated polymer transistors still need more discussions.
Yang Xu, Fanming Huang, Wenwu Li
doaj +1 more source
APL Materials, 2014 n-type binary compound semiconductors such as InN, InAs, or In2O3 are especial because the branch-point energy or charge neutrality level lies within the conduction band. Their tendency to form a surface electron accumulation layer prevents the formation of rectifying Schottky contacts.
von Wenckstern, Holger +5 more
openaire +3 more sources
AIP Advances, 2018 We have studied the dependence of Schottky junction (I–V) characteristics on the metal contact size in metal–semiconductor (M–S) junctions using different metal nanoprobe sizes. The results show strong dependence of (I–V) characteristics on the nanoprobe
Moh’d Rezeq +5 more
doaj +1 more source
Formation CMOS Schemes on GaAs with Self-Aligned Nitride and Silicide Gates
Фізика і хімія твердого тіла, 2016 Advanced integrated logic circuits on GaAs are mainly based on the using of n-channel field-effect transistors with gate Schottky (MESFET). To create the complementary MESFET integrated circuits the main problem is quite small Schottky barrier height ...
S. P. Novosjadly +2 more
doaj +1 more source
Controlling the Schottky barrier at MoS2|metal contacts by inserting a BN monolayer [PDF]
, 2015 Making a metal contact to the two-dimensional semiconductor MoS2 without creating a Schottky barrier is a challenge. Using density functional calculations we show that, although the Schottky barrier for electrons obeys the Schottky-Mott rule for high ...
Brocks, Geert, Farmanbar, Mojtaba
core +4 more sources
In-nSiC schottky photodiode ; Fabrication and Study [PDF]
Engineering and Technology Journal, 2008 In the present work , schottky photodiode have been mode on n-type SiCby depositing of thin layer of In . electrical characteristics included I-V(dark and illumination ) have been investigated .
Khalid Z. Yahiya +2 more
doaj +1 more source
Graphenic Carbon: A Novel Material to Improve the Reliability of Metal-Silicon Contacts
IEEE Journal of the Electron Devices Society, 2017 Contact resistance and thermal degradation of metal-silicon contacts are major challenges in nanoscale CMOS as well as in power device applications. Titanium silicide (TiSi) is commonly used to establish low-barrier height contacts to silicon, in state ...
Max Stelzer, Moritz Jung, Franz Kreupl
doaj +1 more source
Materials Research Express, 2022 Wet chemical treatment is a conventional surface cleaning method, and metal oxide photocatalysts are commonly used to decompose organic compounds in water.
Koji Abe
doaj +1 more source
Green Energy & Environment, 2022 It is highly demanded to steer the charge flow in semiconductor for efficient photocatalytic environmental remediation. Herein, we designed an interfacial contact Ti3C2 MXene/ZnIn2S4 nanosheets (TC/ZISNS) Schottky heterostructure which could greatly ...
Sijian Li +6 more
doaj +1 more source