Results 31 to 40 of about 47,292 (298)

Reconfigurable resistive switching devices based on individual tungsten trioxide nanowires

AIP Advances, 2013
In the two-terminal Au/WO3 nanowire/Au electronic device with two Schottky barriers, drifting of oxygen vacancies under strong electric field induced by the bias voltage applied at short distance will result in the effective width of the reverse biased ...
Jie Guo, Yong Zhou, Huajun Yuan, Ding Zhao, Yanling Yin, Kuo Hai, Yuehua Peng, Weichang Zhou, Dongsheng Tang   +8 more
doaj   +1 more source

Zero-dipole Schottky contact: Homologous metal contact to 2D semiconductor [PDF]

APL Electronic Devices
Band alignment of metal contacts to 2D semiconductors often deviates from the ideal Schottky–Mott (SM) rule due to non-idealities such as the formations of interface dipoles and metal-induced gap states (MIGS).
Yee Sin Ang, Shibo Fang, Che Chen Tho
doaj   +1 more source

Analysis of the Inhomogeneous Barrier in In/p-Si Schottky Contact and Modified Richardson Plot [PDF]

Журнал нано- та електронної фізики, 2016
The current-voltage (I-V) characteristics of In/p-Si Schottky barrier contact were measured over the temperature range 230-360 K with interval of 10 K.
J.M. Dhimmar, H.N. Desai, B.P. Modi
doaj   +1 more source

A generalized drift-diffusion model for rectifying Schottky contact simulation [PDF]

, 2010
We present a discussion on the modeling of Schottky barrier rectifying contacts (diodes) within the framework of partial-differential-equation-based physical simulations.
Bertazzi, Francesco, Bonani, Fabrizio, Donati Guerrieri, Simona, Ghione, Giovanni, Gonzàlez, T., Mateos, J., Pèrez, S., Traversa, F.L.   +7 more
core   +1 more source

Growth Condition-Oriented Defect Engineering for Changes in Au–ZnO Contact Behavior from Schottky to Ohmic and Vice Versa

Nanomaterials, 2018
ZnO has the built-in characteristics of both ionic and covalent compound semiconductors, which makes the metal⁻ZnO carrier transport mechanism quite intricate. The growth mechanism-centric change in ZnO defect density and carrier concentration also
Abu ul Hassan Sarwar Rana, Hyun-Seok Kim   +1 more
doaj   +1 more source

Properties of Pt Schottky Type Contacts On High-Resistivity CdZnTe Detectors [PDF]

, 2001
In this paper we present studies of the I-V characteristics of CdZnTe detectors with Pt contacts fabricated from high-resistivity single crystals grown by the high-pressure Brigman process.
Aleksey E. Bolotnikov, Bolotnikov, C.M. Hubert Chen, Cisneros, Cova, Crowell, Dharmadasa, Fiona A. Harrison, Harrison, Hudait, Rakhshani, Stephen M. Schindler, Steven E. Boggs, Sze, Szeles, Turut, Venghaus, Wada, Walter R. Cook, Wright, Yoon, Yousaf   +21 more
core   +2 more sources

Electron diffusion length and lifetime in p-type GaN [PDF]

, 1998
We report on electron beam induced current and current–voltage (I–V) measurements on Schottky diodes on p-type doped GaN layers grown by metal organic chemical vapor deposition.
Bandić, Z. Z., Bridger, P. M., McGill, T. C., Piquette, E. C.   +3 more
core   +1 more source

Switching Mechanism in Single-Layer Molybdenum Disulfide Transistors: an Insight into Current Flow across Schottky Barriers

, 2013
In this article, we study the properties of metal contacts to single-layer molybdenum disulfide (MoS2) crystals, revealing the nature of switching mechanism in MoS2 transistors. On investigating transistor behavior as contact length changes, we find that
Adam T. Neal, Alam K., Baugher B. W. H., Berger H. H., Das S., Du Y., Guo J., Han Liu, Heinze S., Jun Lou, Liu H., Liu H., Liu H., Liu H., Mak K. F., Mengwei Si, Nagashio K., Najmaei S., Neal A. T, Peide D. Ye, Pulickel M. Ajayan, Radisavljevic B., Schroder D. K., Sina Najmaei, Splendiani A., Taur Y., Tung R. T., Wang H., Yexin Deng, Yoon Y., Yuchen Du   +30 more
core   +1 more source

Ohmic contacts to 2D semiconductors through van der Waals bonding [PDF]

, 2016
High contact resistances have blocked the progress of devices based on MX2 (M = Mo,W; X = S,Se,Te) 2D semiconductors. Interface states formed at MX2/metal contacts pin the Fermi level, leading to sizable Schottky barriers for p-type contacts in ...
Allain, Blöchl, Bokdam, Bokdam, Braga, Britnell, Böker, Chen, Chen, Chhowalla, Chiu, Chuang, Chuang, Cui, Dawson, Dion, Fang, Farmanbar, Geim, George, Giovannetti, Gong, Greiner, Gutiérrez, Joonki, Kang, Kang, Kang, Kappera, Khomyakov, Klimeš, Kresse, Kresse, Kresse, Kröger, Lee, Leong, Li, Lince, Mak, Mattheiss, McDonnell, Momma, Ohno, Ruppert, Schutte, Shokouh, Thonhauser, Tongay, Ugeda, van der Horst, Wang, Yazyev, Zhang, Zhang, Çakır   +55 more
core   +4 more sources

Numerical simulation of the current-voltage characteristics of the inhomogeneous Schottky diodes

Lietuvos Matematikos Rinkinys, 2002
In this paper we offer methods for estimation parameters of diodes of the Schottky by compa­ring outcomes of calculations and experiment. Definite some parameters of contact area: allocation of a active impurity in this area, to define more precisely a ...
Albertas Pincevičius, Rimantas-Jonas Rakauskas   +1 more
doaj   +3 more sources