Results 61 to 70 of about 47,292 (298)
Solar cells having integral collector grids [PDF]
, 1978 A heterojunction or Schottky barrier photovoltaic device is described, comprising a conductive base metal layer. A back surface field region was formed at the interface between the device and the base metal layer, a transparent, conductive mixed metal ...
Evans, J. C., Jr.
core +1 more source
Advanced Functional Materials, EarlyView.Covalent organic frameworks (COFs) with metals have been recognized as versatile platforms for photocatalytic CO2 reduction (CO2PRR). Herein, an overview of metal integration strategies for COFs is systematically summarized. Regulatory mechanisms and structure–activity relationships between metal integration and COF‐based CO2PRR are emphasized.
Jie He +5 more
wiley +1 more source
Beilstein Journal of Nanotechnology, 2011 The nature and photoelectrochemical reactivity of nanoporous semiconductor electrodes have attracted a great deal of attention. Nanostructured materials have promising capabilities applicable for the construction of various photonic and electronic ...
Masao Kaneko +2 more
doaj +1 more source
Advanced Electronic Materials, 2023 A single‐device method is reported for extracting gate‐ and/or drain‐voltage‐dependent contact resistance of thin‐film transistors (TFTs). An extended transition‐voltage method is proposed and verified by experiments of all‐carbon‐nanotube thin‐film ...
Dexing Liu +7 more
doaj +1 more source
A Stable and Efficient Pt/n-Type Ge Schottky Contact That Uses Low-Cost Carbon Paste Interlayers
Crystals, 2021 Ge-based Schottky diodes find applications in high-speed devices. However, Fermi-level pinning is a major issue for the development of Ge-based diodes. This study fabricates a Pt/carbon paste (CP)/Ge Schottky diode using low-cost CP as an interlayer. The
Pei-Te Lin +8 more
doaj +1 more source
Low power hydrogen gas sensors using electrodeposited PdNi-Si Schottky diodes
, 2012 The use of electrodeposited PdNi-Si Schottky barriers as low power Hydrogen sensors is investigated. The Palladium content of the film causes the Hydrogen molecules to dissociate and be absorbed by the film, changing the metal work function and Schottky ...
Boulart, Cédric +4 more
core +1 more source
Conductance‐Dependent Photoresponse in a Dynamic SrTiO3 Memristor for Biorealistic Computing
Advanced Functional Materials, EarlyView.A nanoscale SrTiO3 memristor is shown to exhibit dynamic synaptic behavior through the interaction of local electrical and global optical signals. Its photoresponse depends quantitatively on the conductance state, which evolves and decays over tunable timescales, enabling ultralow‐power, biorealistic learning mechanisms for advanced in‐memory and ...
Christoph Weilenmann +8 more
wiley +1 more source
Temperature evolution of spin accumulation detected electrically in a nondegenerated silicon channel
, 2012 We study temperature evolution of spin accumulation signals obtained by the three-terminal Hanle effect measurements in a nondegenerated silicon channel with a Schottky-tunnel-barrier contact.
Ando, Y. +8 more
core +1 more source
4H-SiC trench MOSFET with integrated fast recovery MPS diode [PDF]
, 2018 A 4H-SiC trench metal-oxide-semiconductor field-effect-transistor (MOSFET) design with an integrated merged PiN Schottky (MPS) diode is proposed. The Schottky contact is embedded on the bottom of the trench structure for the first time.
Chan, Chun Wa +6 more
core +1 more source
The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment [PDF]
, 2020 Molybdenum (Mo)/4H-silicon carbide (SiC) Schottky barrier diodes have been fabricated with a phosphorus pentoxide (P2O5) surface passivation treatment performed on the SiC surface prior to metallization. Compared to the untreated diodes, the P2O5-treated
Baker, G. W. C. +15 more
core +1 more source