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Current‐voltage model of a graphene nanoribbon p‐n junction and Schottky junction diode
IET Circuits, Devices and Systems, 2022 This work presents a simplified analytical model of a p‐n junction diode based on a graphene nanoribbon (GNR) and a unique type of Schottky diode based on metallic graphene and semi‐conducting GNRs.
Samira Shamsir +3 more
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Whiskerless Schottky diode [PDF]
, 1991 A Schottky diode for millimeter and submillimeter wave applications is comprised of a multi-layered structure including active layers of gallium arsenide on a semi-insulating gallium arsenide substrate with first and second insulating layers of silicon ...
Bishop, William L. +2 more
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Metal-semiconductor Schottky diode with Landauer’s formalism
Nano ExpressThe Schottky barrier diode is a unipolar electronic device formed by the heterojunction of a metal and a semiconductor, widely used in various electronic and optoelectronic applications.
Antonio Di Bartolomeo +8 more
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The Role of Self-Assembly Monolayers (SAM) on Schottky Diode Performance
Düzce Üniversitesi Bilim ve Teknoloji DergisiThis study investigates the electrical and charge transport properties of Schottky diodes with a p-Si/TiO2/SAM/Al structure, incorporating the self-assembly monolayers (SAMs) 4", 4""-[biphenyl-4,4" diylbis(phenylimino)]dibiphenyl-4-carboxylic acid ...
Adem Mutlu, Mustafa Can, Cem Tozlu
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Design of Millimeter-wave Detector for Gyrotron Power Monitoring
, 2019 The real-time power monitoring of gyrotron is one of the key issues in the operation of electron cyclotron resonance heating system. The detector can be used for real-time power monitoring.
Liu, Fukun +3 more
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Power Electronic Devices and ComponentsThis article introduces a comparative study of the losses in Voltage Source Inverter (VSI) based on Metal-Oxide- Semiconductor Field-Effect Transistors (MOSFETs) depending on whether or not the latter are associated with antiparallel diodes. These diodes
Mohammed Bououd +4 more
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Sensors, 2014 We report the RF-to-DC characteristics of the integrated AlGaAs/GaAs Schottky diode and antenna under the direct injection and irradiation condition. The conversion efficiency up to 80% under direct injection of 1 GHz signal to the diode was achieved. It
Farahiyah Mustafa, Abdul Manaf Hashim
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On the Implementation of “Dead Time” in a Synchronous Step-Down Converter
EnergiesThe paper investigates and addresses the “dead time” of a synchronous step-down converter implemented with P-channel and N-channel transistors. The transistors are controlled by a single driver, and “dead time” is implemented with external circuits and ...
Hristo Antchev, Dimitar Borisov
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R&D of 3 300V SiC MOSFET With Embedded SBD
Zhongguo dianli, 2021 In this paper, a 3 300 V silicon carbide(SiC) metal-oxide-semiconductor field effect transistors (MOSFET) with embedded schottky barrier diodes(SBD) is developed, where the traditional MOSFET structure is integrated with a titanium-formed Schottky ...
Guoyou LIU +3 more
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A Fast Recovery Vertical Superjunction MOSFET with n-Si and p-3C-SiC Pillars
Crystals, 2022 In the traditional SJ MOSFET structure, n/p pillars with the same doping concentrations in the drift region are introduced to decrease the on-resistance.
Rongyu Gao +6 more
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