Results 91 to 100 of about 34,747 (249)

Fabrication of High‐Density Multimodal Neural Probes Based on Heterogeneously Integrated CMOS

Advanced Science, EarlyView.
A chiplet‐based methodology democratizes active neural probe development on standard bulk CMOS services. This yields the first probe combining high‐density electrophysiology (416 electrodes) with calcium imaging (832 photodiodes) and complete on‐chip signal processing across 13 shanks.
Ju Hee Mun, Miji Kim, Wooyeon Shin, Yongjun Park, Kanghwan Kim, Il‐Joo Cho, Jae Won Shim, Min Soo Kim, Sunwoo Lee, Jeongjin Kim, Changhyuk Lee   +10 more
wiley   +1 more source

Fabrication and characterization of magnetically tunable metal-semiconductor schottky diode using barium hexaferrite thin film on gold

AIP Advances, 2016
Barium Hexaferrite (BaM) is an extensively studied magnetic material due to its potential device application. In this paper, we study Schottky junction diodes fabricated using gold and BaM and demonstrate the function of a spintronic device. Gold (50 nm)/
Jotinder Kaur, Vinay Sharma, Vipul Sharma, V. Veerakumar, Bijoy K. Kuanr   +4 more
doaj   +1 more source

Barrier Inhomogeneity of Schottky Diode on Nonpolar AlN Grown by Physical Vapor Transport

, 2019
An aluminum nitride (AlN) Schottky barrier diode (SBD) was fabricated on a nonpolar AlN crystal grown on tungsten substrate by physical vapor transport.
Dong, Dan, Li, Baikui, Li, Hui, Lin, Yan, Lu, Chengjin, Qin, Zuoyan, Qiu, Ran, Tang, Xi, Wang, Jiannong, Wu, Honglei, Zheng, Ruisheng, Zhou, Qin   +11 more
core   +1 more source

Modulating Persistent Photoconductivity through Barrier Engineering for High‐performance and Multifunctional Two‐dimensional Optoelectronic Devices

Advanced Science, EarlyView.
Schottky barrier engineering using van der Waals contacts enables effective modulation of persistent photoconductivity (PPC) in optoelectronic devices. A high persistent photoconductivity gain (PPCG) (307.6%) is achieved in a high‐barrier Au/MoS2 junction, supporting photomemory and optoelectronic synaptic behaviors. A low PPCG (4.72%) is achieved in a
Panpan Huo, Xinhao Zhang, Xiangyong Cui, Yeming Wang, Dong Zhou, Baoyuan Man, Il Jeon, Won Jong Yoo, Cheng Yang   +8 more
wiley   +1 more source

Design of Strained Ge Schottky Diode on Si Substrate for Microwave Rectifier Circuit

Advances in Condensed Matter Physics, 2020
In recent years, wireless energy transmission technology has developed rapidly and has received increasing attention in the industry. For microwave wireless energy transfer system applications, Ge Schottky diodes as the core components of the rectifier ...
Wei-Feng Liu, Xue-Mei Wu, Jian-Jun Song, Xin-Yan Zhao, Rong-Xi Xuan   +4 more
doaj   +1 more source

Laterally stacked Schottky diodes for infrared sensor applications [PDF]

, 1991
Laterally stacked Schottky diodes for infrared sensor applications are fabricated utilizing porous silicon having pores. A Schottky metal contract is formed in the pores, such as by electroplating.
Lin, True-Lon
core   +1 more source

Polarity control of carrier injection at ferroelectric/metal interfaces for electrically switchable diode and photovoltaic effects

, 2011
We investigated a switchable ferroelectric diode effect and its physical mechanism in Pt/BiFeO3/SrRuO3 thin-film capacitors. Our results of electrical measurements support that, near the Pt/BiFeO3 interface of as-grown samples, a defective layer ...
C. B. Eom, C. M. Folkman, D. Lee, J. F. Scott, J.-G. Yoon, K.-C. Kao, M. E. Lines, S. H. Baek, S. M. Sze, T. H. Kim, T. W. Noh   +10 more
core   +1 more source

Robust and Tailored 1D/3D Heterojunction for Efficient and Stable Perovskite Solar Cells

Advanced Science, EarlyView.
This study successfully established a robust 1D/3D heterojunction, characterized by a stable 1D phase, favorable lattice matching, strong interface binding, and effective defect passivation. The resulting epitaxial perovskite film demonstrates preferential vertical orientation of (100) facets, thereby facilitating carriers’ transport and stress relief.
Wending Hao, Tao Liu, Xu Wang, Luan Li, Ziyu Zhang, Fengqi Sun, Qiang Luo, Ning Wang   +7 more
wiley   +1 more source

New approach to the design of Schottky barrier diodes for THz mixers [PDF]

Near-ideal GaAs Schottky barrier diodes especially designed for mixing applications in the THz frequency range are presented. A diode fabrication process for submicron diodes with near-ideal electrical and noise characteristics is described. This process
Grueb, A., Hartnagel, H. L., Jelenski, A., Krozer, V.   +3 more
core   +1 more source

A Fully Tunable Single-Walled Carbon Nanotube Diode

, 2010
We demonstrate a fully tunable diode structure utilizing a fully suspended single-walled carbon nanotube (SWNT). The diode's turn-on voltage under forward bias can be continuously tuned up to 4.3 V by controlling gate voltages, which is ~6 times the ...
Appenzeller J., Appenzeller J., Appenzeller J., Avouris P., Avouris P., Boettcher S. W., Bosnick K., Chang-Hua Liu, Chau R., Chen J., Chung-Chiang Wu, Dresselhaus M. D., Gabor N. M., Heinze S., Jena D., Knoch J., Lee J. U., Lee J. U., Lee J. U., Leonard F., Lonergan M. C., Mueller T., Park S. Y., Schulman J. N., Sze S. M., Wu C. C., Zhaohui Zhong, Zhou Y. X.   +27 more
core   +1 more source