Results 111 to 120 of about 34,747 (249)

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

Solution Processed Polymer Source‐Gated Transistors for Zero‐Power Photosensing

Advanced Electronic Materials, EarlyView.
This study demonstrates the first solution‐processed bulk heterojunction organic source‐gated transistors (OSGTs) and photo‐OSGTs fabricated using DPP‐DTT: PCBM. Copper‐electrode OSGTs show deep off‐state at zero gate‐source voltage, channel length‐independent on‐state current, and low voltage saturation (γ = 0.22).
Eva Bestelink, Ahmed Wafic, Mattia Scagliotti, Dimitar Kutsarov, Imalka Jayawardena, Matteo Rapisarda, Radu A. Sporea   +6 more
wiley   +1 more source

Stability of Perovskite Indoor Photovoltaics: A Focused Review and a Call for Standardized Stability Reporting

Advanced Energy Materials, EarlyView.
While perovskite solar cells have been widely studied, including their stability, perovskite indoor photovoltaics (IPVs) have only recently emerged. Nevertheless, more studies are appearing in the literature. The systematic stability study of IPVs is crucial, particularly given the inconsistencies in reported methodologies and results, which call for ...
Ivy Mawusi Asuo, Arezo Mahdavi Varposhti, Cyril Chu Fubin Kumachang, Gopal Krishnamurthy Grandhi, Vincenzo Pecunia, Thomas Meredith Brown, Paola Vivo, Nutifafa Yao Doumon   +7 more
wiley   +1 more source

Fabrication and Characterization of Al/p-CuInAlSe2 Thin Film Schottky Diodes [PDF]

Журнал нано- та електронної фізики, 2013
Al/p-CuInAlSe2 polycrystalline schottky diodes fabricated by flash evaporation method were undertaken for their electrical analysis at room temperature. Diode parameters of the undertaken diodes were then derived from the current-voltage (I-V) as well as
Usha Parihar, N. Padha, C.J. Panchal
doaj  

Schottky-Diode Design for Future High-Speed Telecommunications. [PDF]

Nanomaterials (Basel), 2023
Wong CH, Lam LF, Hu X, Tsui CP, Zatsepin AF.   +4 more
europepmc   +1 more source

Degradation Mechanisms of Rutile‐Type TiO2 Photoanodes during Photoelectrochemical Water Splitting

Advanced Energy Materials, EarlyView.
Combining operando dissolution measurements with microscopy and spectroscopy characterizations, we reveal different degradation mechanisms of rutile‐type TiO2 photoanodes during photoelectrochemical water splitting. In acidic electrolytes, degradation is inhibited once TiO2 reaches saturation.
Yiqun Jiang, Raquel Aymerich‐Armengol, Ilias Efthimiopoulos, Martin Rabe, Andrea M. Mingers, Ningyan Cheng, Benjamin Breitbach, Saswati Santra, Verena Streibel, Ian D. Sharp, Lilian Vogl, Christina Scheu, Siyuan Zhang   +12 more
wiley   +1 more source

Novel 4H-SiC Double-Trench MOSFETs with Integrated Schottky Barrier and MOS-Channel Diodes for Enhanced Breakdown Voltage and Switching Characteristics

Nanomaterials
In this study, a novel silicon carbide (SiC) double-trench MOSFET (DT-MOS) combined Schottky barrier diode (SBD) and MOS-channel diode (MCD) is proposed and investigated using TCAD simulations. The integrated MCD helps inactivate the parasitic body diode
Peiran Wang, Chenglong Li, Chenkai Deng, Qinhan Yang, Shoucheng Xu, Xinyi Tang, Ziyang Wang, Wenchuan Tao, Nick Tao, Qing Wang, Hongyu Yu   +10 more
doaj   +1 more source

Fully rubbery Schottky diode and integrated devices. [PDF]

Sci Adv, 2022
Jang S, Shim H, Yu C.
europepmc   +1 more source

Structure and Spectroscopic Characterisation of Phenanthroline‐Based Iodobismuthate(III) Complexes Utilised for Raw Acoustic Signal Classification

Advanced Intelligent Discovery, EarlyView.
Memristors based on trimethylsulfonium (phenanthroline)tetraiodobismuthate have been utilised as a nonlinear node in a delayed feedback reservoir. This system allowed an efficient classification of acoustic signals, namely differentiation of vocalisation of the brushtail possum (Trichosurus vulpecula).
Ewelina Cechosz, Gisya Abdi, Andrzej Sławek, Marlena Gryl, Konrad Szaciłowski   +4 more
wiley   +1 more source

Effect of Heating of Charge Carriers and Phonons on The Contact Resistance of Rectifying Metal-Semiconductor Structures

East European Journal of Physics
The dependence of the temperature of charge carriers and phonons on the contact resistance of the Schottky diode is calculated. It is shown that the increase in contact resistance depends on the current passing through the diode, the surface and volume ...
Gafur Gulyamov, K.B. Umarov, Alisher Z. Soliyev   +2 more
doaj   +1 more source