Results 131 to 140 of about 34,747 (249)

Investigation of Deep Spiking Neural Networks Utilizing Gated Schottky Diode as Synaptic Devices. [PDF]

Micromachines (Basel), 2022
Lee ST, Bae JH.
europepmc   +1 more source

Germanium‐Based Mid‐Infrared Integrated Photonics

Laser &Photonics Reviews, EarlyView.
The mid‐infrared (mid‐IR) spectral range is a part of the electromagnetic spectrum in which most of the molecules have vibrational and rotational resonances. Photonics integration in this wavelength range have thus seen a burst of interest in the recent years, mainly driven by applications related with the detection of chemical and biological ...
Delphine Marris‐Morini, Goran Z. Mashanovich, Milos Nedeljkovic, Carlos Alonso‐Ramos, Laurent Vivien, Jacopo Frigerio, Giovanni Isella   +6 more
wiley   +1 more source

State-of-the-Art Room Temperature Operable Zero-Bias Schottky Diode-Based Terahertz Detector Up to 5.56 THz. [PDF]

Sensors (Basel), 2023
Yadav R, Ludwig F, Faridi FR, Klopf JM, Roskos HG, Preu S, Penirschke A.   +6 more
europepmc   +1 more source

SiC Fin-Shaped Gate Trench MOSFET with Integrated Schottky Diode. [PDF]

Materials (Basel), 2021
Deng X, Liu R, Li S, Li L, Wu H, Li X.
europepmc   +1 more source

Analytical Solution to the Gradual Channel Approximation for Metal–Oxide‐Semiconductor Field‐Effect Transistors

physica status solidi (b), EarlyView.
Schematic of a metal‐oxide‐semiconductor field‐effect transistor at pinch‐off together with the channel potential. We revisit the problem of the potential distribution in an inversion channel field effect transistor (metal–oxide‐semiconductor field‐effect transistor) within the gradual channel approximation.
Marius Grundmann
wiley   +1 more source

Control of Ni/β-Ga₂O₃ Vertical Schottky Diode Output Parameters at Forward Bias by Insertion of a Graphene Layer. [PDF]

Nanomaterials (Basel), 2022
Labed M, Sengouga N, Rim YS.
europepmc   +1 more source

Wet‐Transferred MoS2 on Passivated InP: A Van der Waals Heterostructure for Advanced Optoelectronic Applications

physica status solidi (RRL) – Rapid Research Letters, Volume 19, Issue 5, May 2025.
This study presents a photodetector based on atomically thin MoS2 on an InP substrate, forming an n‐MoS2/p‐InP type‐II staggered heterojunction. The device exhibits excellent rectifying properties with an ideality factor of 1.57 and achieves a peak photoresponsivity of 960 mA W−1, while MoS2 provides stable passivation for InP. III–V semiconductors are
Dong Hwi Choi, Jae Hyeop Lee, Min Su Kim, Jaeseo Park, Jun Oh Kim, Teli Aviraj Mahadev, Beknalkar Sonali Ajay, Hong Hyuk Kim, Jae Cheol Shin   +8 more
wiley   +1 more source

Multi frequency multi bit amplitude modulation of spoof surface plasmon polaritons by schottky diode bridged interdigital SRRs. [PDF]

Sci Rep, 2021
Ling H, Zhang B, Feng M, Qian P, Wang Y, Wang Q, Zhang Y, Song A.   +7 more
europepmc   +1 more source

Development and fabrication of improved Schottky power diodes, phases I and II [PDF]

Reproducible methods for the fabrication of silicon Schottky diodes were developed for the metals tungsten, aluminum, conventional platinum silicide and low temperature platinum silicide.
Cordes, L. F., Garfinkle, M., Taft, E. A.   +2 more
core   +1 more source

Opportunities for 2D‐Material‐Based Multifunctional Devices and Systems in Bioinspired Neural Networks

Small, EarlyView.
Bio‐inspired computing offers a route to highly energy‐efficient artificial intelligence. The unique physical properties of two‐dimensional (2D) materials can further enhance such computing approaches. This perspective highlights recent developments in 2D materials‐based neuromorphic devices and discusses future opportunities for integrating such novel
Jin Feng Leong, Maheswari Sivan, Jieming Pan, Zihang Fang, Jianan Li, Zefeng Xu, Shi Zhao, Quanzhen Wan, Evgeny Zamburg, Aaron Voon‐Yew Thean   +9 more
wiley   +1 more source